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| SI9942DY Vishay Siliconix Complimentary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.125 @ VGS = 10 V 0.250 @ VGS = 4.5 V 0.200 @ VGS = -10 V 0.350 @ VGS = -4.5 V ID (A) "3.0 "2.0 "2.5 "2.0 P-Channel -20 D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "20 "3.0 "2.5 "10 1.6 2.0 1.3 P-Channel -20 "20 "2.5 "2.0 "10 -1.6 Unit V A W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70130 S-000652--Rev. L, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 1 SI9942DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS = -16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V On-State Drain Currentb OS DiC ID(on) VDS v -5 V, VGS = -10 V VDS w 5 V, VGS = 4.5 V VDS v -5 V, VGS = -4.5 V VGS = 10 V, ID = 1.0 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = -10 V, ID = 1.0 A VGS = 4.5 V, ID = 0.5 A VGS = -4.5 V, ID = 0.5 A Forward Transconductanceb gfs VDS = 15 V, ID = 3.0 A VDS = -15 V, ID = -3.0 A IS = 1.25 A, VGS = 0 V IS = -1.25 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 -10 A 2 -2 0.07 0.12 0.105 0.22 4.8 S 3.0 0.75 -0.8 1.2 V -1.2 0.125 0.200 0.250 0.350 W N-Ch P-Ch 1.0 V -1.0 "100 2 -2 25 -25 mA A nA Symbol Test Condition Min Typa Max Unit Diode Forward Voltageb VSD Dynamica N-Ch Total Gate Charge Qg N-Channel N Ch Channel l VDS = 10 V, VGS = 10 V, ID = 2.3 A P-Channel VDS = -10 V VGS = -10 V ID = -2.3 A 10 V, 10 V, 23 Gate-Drain Charge Qgd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel N Ch l VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -20 V RL = 20 W 20 V, ID ^ -1 A, VGEN = -10 V, RG = 6 W 1 10 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time tf P-Ch N-Ch Source-Drain Reverse Recovery Time trr IF = 1.25 A, di/dt = 100 A/ms P-Ch 7 6.7 0.75 nC C 1.3 1.7 1.6 6 10 10 12 17 20 10 10 45 70 15 40 20 40 50 ns 90 50 50 100 100 25 25 Gate-Source Charge Qgs Rise Time tr Turn-Off Delay Time td(off) Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70130 S-000652--Rev. L, 27-Mar-00 SI9942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 4 V 8 I D - Drain Current (A) 8 125_C 6 6 10 TC = -55_C N CHANNEL Transfer Characteristics 4 3V 4 2 2V 0 0 2 4 6 8 10 2 25_C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 600 Capacitance r DS(on) - On-Resistance ( ) 0.16 C - Capacitance (pF) 500 0.12 VGS = 4.5 V 400 300 Ciss 200 Coss 100 Crss 0.08 VGS = 10 V 0.04 0 0 2 4 6 8 10 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance ( ) (Normalized) VDS = 10 V ID = 2.3 A 1.6 VGS = 10 V ID = 2 A 6 1.2 4 0.8 2 0.4 0 0 2 4 6 8 0 -50 0 50 100 150 Qg - Total Gate Charge (nC) Document Number: 70130 S-000652--Rev. L, 27-Mar-00 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 3 SI9942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 TJ = 150_C r DS(on) - On-Resistance ( ) I S - Source Current (A) 0.50 N CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.40 TJ = 25_C 0.30 ID = 3 A 0.20 0.10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 30 Single Pulse Power 0.2 ID = 250 A V GS(th) Variance (V) -0.0 Power (W) 25 20 -0.2 15 -0.4 10 -0.6 5 -0.8 -50 0 0 50 TJ - Temperature (_C) 100 150 0.010 0.100 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70130 S-000652--Rev. L, 27-Mar-00 SI9942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 6 V 8 I D - Drain Current (A) I D - Drain Current (A) 5V 6 8 10 TC = -55_C 25_C 125_C 6 P CHANNEL Transfer Characteristics 4 4V 2 3V 0 0 2 4 6 8 10 4 2 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 VGS = 4.5 V r DS(on) - On-Resistance ( ) 0.8 C - Capacitance (pF) 500 400 Coss 300 700 600 Capacitance 0.6 0.4 Ciss 200 100 Crss 0.2 VGS = 10 V 0 0 2 4 ID - Drain Current (A) 6 8 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 10 Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 6 r DS(on) - On-Resistance ( ) (Normalized) 8 VDS =10 V ID = 2.3 A 1.6 VGS = 10 V ID = 2.3 A 1.2 4 0.8 2 0.4 0 0 2 4 6 8 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70130 S-000652--Rev. L, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 5 SI9942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 1.0 P CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( ) 0.8 ID = 2.3 A 0.6 TJ = 25_C 0.4 0.2 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 30 Single Pulse Power 0.6 ID = 250 A V GS(th) Variance (V) 0.4 25 20 0.2 15 0.0 10 -0.2 5 0 0.010 TJ - Temperature (_C) 0.100 1 10 30 -0.4 -50 -25 0 25 50 75 100 125 150 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 6 Document Number: 70130 S-000652--Rev. L, 27-Mar-00 |
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