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N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7002 DESCRIPTION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important. ORDERING INFORMATION Part 2N7002 X2N7002 Package Plastic SOT-23 Package Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC PIN CONFIGURATION 1 2 1 DRAIN 2 SOURCE 3 GATE 1 3 3 TOP VIEW 2 S G SOT-23 D CD5 PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(ON) () 7.5 ID (A) 0.115 PRODUCT MARKING 2N7002 V02 9-3 2N7002 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL VDS VGS ID IDM PD TJ Tstg TL PARAMETERS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) 1 LIMITS 60 40 0.115 0.073 0.8 200 80 -55 to 150 -55 to 150 300 UNITS V TEST CONDITIONS TA = 25oC A TA = 100 oC TA = 25oC TA = 100 oC mW o C THERMAL RESISTANCE RATINGS SYMBOL RthJA NOTE: THERMAL RESISTANCE Junction-to-Ambient LIMITS 625 UNITS K/W 1. Pulse width limited by maximum junction temperature. SPECIFICATIONS1 SYMBOL STATIC V(BR)DSS VGS(th) IGSS IDSS ID(ON) Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 PARAMETER MIN 60 1 TYP2 70 1.9 MAX UNIT TEST CONDITIONS ID = 10A, VGS = 0V VDS = VGS, I D = 0.25mA VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V TC = 125oC VDS = 2VDS(ON), VGS = 10V VGS = 5V, I D = 50mA TC = 125oC VGS = 10V, ID = 0.5A TC = 125oC VGS = 5V, I D = 50mA 2.5 100 1 500 V nA A mA 500 1000 5 7.5 13.5 7.5 13.5 0.375 3.75 6.75 9 2.5 4.4 0.25 rDS(ON) Drain-Source On-Resistance3 VDS(ON) gFS gOS DYNAMIC C iss Coss Crss SWITCHING t ON t OFF NOTES: 1. 2. 3. 4. Drain-Source On-Voltage3 Forward Transconductance3 Common Source Output Conductance3, 4 Input Capacitance Output Capacitance 4 1.25 2.2 80 170 500 16 11 2 V mS S VGS = 10V, ID = 0.5A TC = 125oC4 VDS = 10V, ID = 0.2A VDS = 5V, ID = 50mA 50 25 5 pF VDS = 25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Turn-On Time Turn-Off Time TA = 25oC unless otherwise specified. For design aid only, not subject to production testing. Pulse test; PW = 80S, duty cycle 1%. This parameter not registered with JEDEC. 7 7 20 nS 20 VDD = 30V, RL = 150, ID = 0.2A VGEN = 10V, RG = 25 (Switching time is essentially independent of operating temperature) 9-4 |
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