View FGK60N6S2D_254151.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FGK60N6S2D
June 2002
FGK60N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGK60N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: * * * * * * Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits
Features
* 100kHz Operation at 390V, 52A * 200kHZ Operation at 390V, 31A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC * Low Gate Charge . . . . . . . . 140nC at VGE = 15V * Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical * UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ * Low Conduction Loss
IGBT formerly Developmental Type TA49346 Diode formerly Developmental Type TA49393
Package
JEDEC STYLE STRETCH TO-247
E C G
Symbol
C
G
E
Device Maximum Ratings TC= 25C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25C Collector Current Continuous, TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150C, Figure 2 Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 75 75 320 20 30 200A at 600V 700 625 5 -55 to 150 -55 to 150 mJ W W/C C C Units V A A A V V
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
(c)2002 Fairchild Semiconductor Corporation FGK60N6S2D Rev. A1
FGK60N6S2D
Package Marking and Ordering Information
Device Marking 60N6S2D Device FGK60N6S2D Package TO-247 Tape Width N/A Quantity 30
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current IC = 250A, VGE = 0 VCE = 600V VGE = 20V TJ = 25C TJ = 125C 600 250 3 250 V A mA nA
On State Characteristics
VCE(SAT) VEC Collector to Emitter Saturation Voltage Diode Forward Voltage IC = 40A, VGE = 15V IEC = 40A TJ = 25C TJ = 125C 1.9 1.65 2.1 2.5 2.2 2.6 V V V
Dynamic Characteristics
QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 40A, VCE = 300V VGE = 15V VGE = 20V 3.5 140 180 4.3 6.5 175 228 5.0 8.0 nC nC V V
IC = 250A, VCE = VGE IC = 40A, VCE = 300V
Switching Characteristics
SSOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF trr Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Reverse Recovery Time IEC =40A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s IGBT and Diode at TJ = 125C ICE = 40A, VCE = 390V, VGE = 15V, RG = 3 L = 100H Test Circuit - Figure 26 TJ = 150C, RG = 3, VGE = 15V, L = 100H, VCE = 600V IGBT and Diode at TJ = 25C, ICE =40A, VCE = 390V, VGE = 15V, RG =3 L = 100H Test Circuit - Figure 26 200 18 15 70 50 400 490 310 27 32 110 77 400 750 688 75 50 450 150 90 450 850 950 90 60 A ns ns ns ns J J J ns ns ns ns J J J ns ns
Thermal Characteristics
RJC
NOTE: 2. Values
Thermal Resistance Junction-Case
IGBT Diode
-
-
0.2 0.75
C/W C/W
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
FGK60N6S2D Rev. A1
(c)2002 Fairchild Semiconductor Corporation
FGK60N6S2D
Typical Performance Curves
175 150 125 100 PACKAGE LIMITED 75 50 25 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC 225 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 3 VGE = 15V, L = 100H ,
ICE , DC COLLECTOR CURRENT (A)
Figure 1. DC Collector Current vs Case Temperature
1000 TJ = 125oC, RG = 3 L = 100H, V CE = 390V , fMAX, OPERATING FREQUENCY (kHz) TC = 75oC 500
Figure 2. Minimum Switching Safe Operating Area
16 tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 390V, RG = 3, TJ = 125oC 14 12 ISC 10 8 6 tSC 4 2 0 30 50 100 9 10 11 12 13 14 15 16 VGE , GATE TO EMITTER VOLTAGE (V)
1100 1000 900 800 700 600 500 400 300 ISC, PEAK SHORT CIRCUIT CURRENT (A) 2.2
VGE = 15V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) 50 30 5 10 ICE, COLLECTOR TO EMITTER CURRENT (A) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.2oC/W, SEE NOTES VGE = 10V
Figure 3. Operating Frequency vs Collector to Emitter Current
80 ICE, COLLECTOR TO EMITTER CURRENT (A) 70 60 50 40 30 20 TJ = 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 125oC DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250s
Figure 4. Short Circuit Withstand Time
80 ICE, COLLECTOR TO EMITTER CURRENT (A) 70 60 50 40 TJ = 125oC 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC TJ = 25oC DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s
150oC
TJ = 25oC
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
(c)2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
Typical Performance Curves (Continued)
4.0 RG = 3, L = 100H, VCE = 390V EOFF TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TJ = 25oC, TJ = 125oC, VGE = 15V 0 0 10 20 30 40 50 60 70 80 0.0 0 10 20 30 TJ = 25oC, TJ = 125oC, VGE = 10V 1.75 1.50 1.25 1.00 TJ = 125oC, VGE = 10V, VGE = 15V 0.75 0.50 0.25 TJ = 25oC, VGE = 10V, VGE = 15V 40 50 60 70 80 2.00 RG = 3, L = 100H, VCE = 390V
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to Emitter Current
32 30 td(ON)I, TURN-ON DELAY TIME (ns) 28 RG = 3, L = 100H, VCE = 390V
Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current
90 RG = 3, L = 100H, VCE = 390V 80 70 trI , RISE TIME (ns)
26 24 22 20 18 16 14 12 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, TJ = 125oC, VGE = 15V TJ = 25oC, TJ = 125oC, VGE = 10V
60 50 TJ = 25oC, TJ = 125oC, VGE = 10V 40 30 20 10 0 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, TJ = 125oC, VGE = 15V
Figure 9. Turn-On Delay Time vs Collector to Emitter Current
120
Figure 10. Turn-On Rise Time vs Collector to Emitter Current
90 RG = 3, L = 100H, VCE = 390V 80
RG = 3, L = 100H, VCE = 390V
td(OFF)I , TURN-OFF DELAY TIME (ns)
100 70 80 VGE = 10V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) 60 50 40 30 20 20 TJ = 25oC, TJ = 125oC, VGE = 10V
60 VGE = 10V, VGE = 15V, TJ = 40 25oC
TJ = 25oC, TJ = 125oC, VGE = 15V
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to Emitter Current
Figure 12. Fall Time vs Collector to Emitter Current
(c)2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
Typical Performance Curves (Continued)
200 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) 175 150 125 100 TJ = 25oC 75 50 TJ = 125oC 25 TJ = -55oC 0 3.0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 20 VGE, GATE TO EMITTER VOLTAGE (V) 40 60 80 100 QG , GATE CHARGE (nC) 120 140 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s 16 IG(REF) = 1mA, RL = 7.5 14 12 10 8 6 4 2 VCE = 200V
VCE = 600V
VCE = 400V
Figure 13. Transfer Characteristic
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) RG = 3, L = 100H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 4 ICE = 80A 3 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 5 100
Figure 14. Gate Charge
TJ = 125oC, L = 100H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
10
ICE = 80A 1 ICE = 40A ICE = 20A
2 ICE = 40A 1 ICE = 20A 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
0.1 1 10 100 1000 RG, GATE RESISTANCE ()
Figure 15. Total Switching Loss vs Case Temperature
10 CIES C, CAPACITANCE (nF) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz
Figure 16. Total Switching Loss vs Gate Resistance
2.8 DUTY CYCLE < 0.5% PULSE DURATION = 250s 2.6
1
2.4
COES 0.1
2.2
ICE = 60A
2.0 ICE = 40A 1.8 ICE = 20A 1.6 6 7 8 9 10 11 12 13 14 15 16
CRES 0.01 0 20 40 60 80 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 100
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter Voltage
Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage
(c)2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
Typical Performance Curves (Continued)
80 DUTY CYCLE < 0.5%, PULSE DURATION = 250s 300 dIEC/dt = 200A/s, VCE = 390V trr, REVERSE RECOVERY TIMES (ns) 250 125oC trr 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 4 8 12 16 20 24 28 32 36 40 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) 25oC ta, tb 125oC tb
IEC , FORWARD CURRENT (A)
60
40 125oC 25oC
125oC ta
25oC trr
20
0
Figure 19. Diode Forward Current vs Forward Voltage Drop
Figure 20. Recovery Times vs Forward Current
ta, tb, REVERSE RECOVERY TIMES (ns)
IEC = 40A, VCE = 390V 200 125oC tb 150
Qrr , REVERSE RECOVERY CHARGE (C)
250
2.00 VCE = 390V 1.75 1.50 1.25 1.00 0.75 25oC, IEC = 40A 0.50 0.25 0 200 25oC, IEC = 20A 125oC, IEC = 40A
125oC, IEC = 20A
100
25oC ta 125oC ta 25oC tb 300 400 500 600 700 800 900 1000
50
0 200
300
400
500
600
700
800
900
1000
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
Figure 21. Recovery Times vs Rate of Change of Current
S, REVERSE RECOVERY SOFTNESS FACTOR 4.0 VCE = 390V, TJ = 125C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 200 IEC = 20A IEC = 40A
Figure 22. Stored Charge vs Rate of Change of Current
IRRM, MAX REVERSE RECOVERY CURRENT (A) 40 VCE = 390V, TJ = 125C 35 30 25 20 15 10 5 200 IEC = 20A IEC = 40A
300
400
500
600
700
800
900
1000
300
400
500
600
700
800
900
1000
dIEC/dt, CURRENT RATE OF CHANGE (A/s)
dIEC/dt, CURRENT RATE OF CHANGE (A/s)
Figure 23. Reverse Recovery Softness Factor vs Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs Rate of Change of Current
(c)2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
Typical Performance Curves (Continued)
ZJC , NORMALIZED THERMAL RESPONSE
100 0.50 0.20 0.10 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
t1
t1 , RECTANGULAR PULSE DURATION (s)
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGK60N6S2D DIODE TA49393 90% VGE L = 100H VCE RG = 3 + 90% ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
FGK60N6S2D
-
Figure 26. Inductive Switching Test Circuit
Figure 27. Switching Test Waveforms
(c)2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/ 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
(c)2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST (R)
DISCLAIMER
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGIC (R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H7

▲Up To Search▲

Price & Availability of FGK60N6S2D

	To Download FGK60N6S2D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .