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| Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150 C Operating Temperature s Lower Leakage Current : 10 A (Max.) @ VDS = 150V s Lower RDS(ON) : 0.064 (Typ.) o SFH154 BVDSS = 150 V RDS(on) = 0.075 ID = 34 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds o o o Value 150 34 21.6 Units V A A V mJ A mJ V/ns W W/ C o 136 30 867 34 20.4 5.0 204 1.63 - 55 to +150 o C 300 Thermal Resistance Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.61 -40 o Units C/W 1 SFH154 Electrical Characteristics (TC=25 unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Miller) Charge Min. Typ. Max. Units 150 -2.0 -----------------0.11 ------20 --4.0 100 -100 10 100 0.075 -A V V/ V nA N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250A ID=250A VGS=20V VGS=-20V VDS=150V VDS=120V,TC=125 VGS=10V,ID=17A VDS=40V,ID=17A See Fig 7 VDS=5V,ID=250A 2590 3370 380 450 135 200 20 25 70 30 90 20 35 50 60 145 70 110 --nC ns pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=75V,ID=34A, RG=6.2 See Fig 13 VDS=120V,VGS=10V, ID=34A See Fig 6 & Fig 12 Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --------203 1.52 34 136 1.5 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25,IS=34A,VGS=0V TJ=25,IF=34A diF/dt=100A/s Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=1.0mH, IAS=34A, VDD=50V, RG=27, Starting TJ =25 ISD34A, di/dt400A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS SFH154 Fig 2. Transfer Characteristics 12 0 12 0 ID , Drain Current [A] ID , Drain Current [A] 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 11 0 11 0 1 0 oC 5 10 0 2 oC 5 - 5 oC 5 @Nts: oe 1 V =0V . GS 2 V =4 V . DS 0 3 2 0 s P l e T s .5 us et @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 1 0 -1 0 1 0 10 0 11 0 1 -1 0 0 2 4 6 8 1 0 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 01 .2 V =1 V 0 GS 12 0 Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 01 .0 00 .8 11 0 00 .6 V =2 V 0 GS 10 0 1 0 oC 5 2 oC 5 1 -1 0 02 . 04 . 06 . 08 . 10 . 12 . @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 14 . 16 . 18 . 20 . 00 .4 @Nt :T =2 C oe J 5 00 .2 0 3 0 6 0 9 0 10 2 10 5 o ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 40 00 C =C +C (C =sot d) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 1 5 Fig 6. Gate Charge vs. Gate-Source Voltage C iss Capacitance [pF] 30 00 VGS , Gate-Source Voltage [V] V =3 V 0 DS 1 0 V =7 V 5 DS V =10V 2 DS 20 00 C oss 10 00 C rss @Nts: oe 1 V =0V . GS 2 f=1Mz . H 5 @Nts:I =3 A oe 4 D 0 0 2 0 4 0 6 0 8 0 10 0 00 1 0 11 0 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] 3 SFH154 Fig 7. Breakdown Voltage vs. Temperature 12 . 20 . N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 16 . 10 . 12 . 09 . @Nts: oe 1 V =0V . GS 2 I = 2 0 A .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 08 . @Nts: oe 1 Vs=1V .g 0 2 I =1A .d 7 08 . -5 7 -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area 13 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y 12 0 1m s 1m 0s 11 0 @Nts: oe 1 T = 2 oC .C 5 10 0 2 T = 1 0 oC .J 5 3 Snl Ple . ige us D C Fig 10. Max. Drain Current vs. Case Temperature 4 0 ID , Drain Current [A] ID , Drain Current [A] 3 0 01m .s 2 0 1 0 1 -1 0 0 1 0 11 0 12 0 0 2 5 5 0 7 5 10 0 15 2 10 5 VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 0.2 10- 1 0.1 0.05 0.02 0.01 10- 2 10- 5 10- 4 single pulse Z JC (t) , @ Notes : 1. Z J C (t) = 0.61 o C/W Max. 2. Duty Factor, D = t1 /t2 3. TJ M -TC = PD M *Z J C (t) PDM t1 t2 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] 4 N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SFH154 * Current Regulator " 50K 12V 200nF 300nF Same Type as DUT VGS Qg 10V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 10V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 10V tp ID (t) VDS (t) Time 5 SFH154 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD * dv/dt controlled by RG * IS controlled by Duty Factor D VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6 |
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