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| Preliminary data OptiMOS -P Power - Transistor Feature * P-Channel * Enhancement mode * Logic Level * High current rating * 175C operating temperature * Avalanche rated * dv/dt rated 6 SPD50P03L Product Summary VDS RDS(on) ID -30 7 -50 P-TO252-5-3 V m A 12 34 5 Drain pin 3,6 Type SPD50P03L Package P-TO252-5-3 Ordering Code Q67042-S4076 Gate pin1 pin 2 n.c. Source pin 4,5 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value -50 -50 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg -200 256 -6 20 150 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =-50 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-50A, VDS =-24V, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-12-06 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint, t < 10s @ 6 cm 2 cooling area 1) SPD50P03L Symbol min. RthJC RthJA - Values typ. max. 1 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -30 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-250A Zero gate voltage drain current VDS =-30V, VGS =0, Tj =25C VDS =-30V, VGS =0, Tj =150C A -0.1 -10 -10 8.5 5.7 -1 -100 -100 12.5 7 nA m Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-30A Drain-source on-state resistance VGS =-10V, ID =-50A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air; t 10 sec. Page 2 2001-12-06 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-15V, VGS =-10V, ID =-1A, RG=6 cVDS c2*cIDc*RDS(on)max ID =-50A VGS =0, VDS =-25V, f=1MHz SPD50P03L Symbol Conditions min. 47 - Values typ. 94 4560 1178 965 14.8 21.7 139 104 max. 22 32 208 156 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, |IF | = |ID | VR =-15V, |IF | = |lD |, diF /dt=100A/s Qgs Qgd Qg VDD =-24V, ID =-50A - -12.7 -40 -119 -2.7 -17 -60 -178 - nC VDD =-24V, ID =-50A, VGS =0 to -10V V(plateau) VDD =-24V, ID =-50A V IS ISM TC=25C - -1.1 38 46 -50 -200 A -1.65 V 47 57 ns nC Page 3 2001-12-06 Preliminary data 1 Power dissipation Ptot = f (TC ) 160 SPD50P03L SPD50P03L 2 Drain current ID = f (TC ) parameter: |VGS | 10 V -55 SPD50P03L W A -45 120 -40 Ptot 100 ID 20 40 60 80 100 120 140 160 C 190 -35 -30 80 -25 60 -20 -15 -10 20 -5 0 0 0 0 20 40 60 80 100 120 140 160 C 190 40 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C -10 3 SPD50P03L 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 K/W 2 SPD50P03L A /I D 10 1 tp = 52.0s V DS 10 0 on ) -10 2 Z thJC = 100 s ID R DS ( 10 -1 10 -2 1 ms D = 0.50 10 -3 10 -4 0.20 0.10 0.05 0.02 single pulse 0.01 -10 1 10 ms DC 10 -5 -10 0 -1 -10 -10 0 -10 1 V -10 2 10 -6 -8 -7 -6 -5 -4 -3 -2 10 10 10 10 10 10 10 s 10 0 VDS Page 4 tp 2001-12-06 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s 200 SPD50P03L 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 0.015 A 160 140 Vgs = -4.5V Vgs = -4V Vgs = -4.5V Vgs = -4V RDS(on) - ID 0.01 Vgs = -5V 120 100 80 60 40 Vgs = -5V Vgs = -5.5V Vgs = -7V Vgs = -10V 0.0075 0.005 0.0025 20 0 0 0 0 Vgs = - 5.5V Vgs = - 6V Vgs= - 7V Vgs= - 8V Vgs = - 9V Vgs = - 10V 20 40 60 80 100 120 140 160 1 2 3 4 5 6 7 8 V 10 - V DS A 200 - ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS | 2 x |ID| x RDS(on)max parameter: tp = 80 s 120 8 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: tp = 80 s 110 A 100 90 S 90 80 - ID g fs 0.5 1 1.5 2 2.5 3 4 V - V GS 80 70 70 60 60 50 50 40 30 20 10 0 0 40 30 20 10 0 0 20 40 60 80 A - ID 120 Page 5 2001-12-06 Preliminary data 9 Drain-source on-resistance RDS(on) = f(Tj ) parameter: ID = -50 A, VGS = -10 V 10 SPD50P03L 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 A 2.4 V m 2 - VGS(th) RDS(on) 1.8 1.6 1.4 1.2 8 98% 7 98% typ. 6 typ. 1 0.8 5 0.6 4 0.4 0.2 3 -60 -20 20 60 100 2% C 160 Tj 0 -60 -20 20 60 100 C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s -10 3 SPD50P03L A pF Ciss C 10 3 Crss IF -10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) -10 0 0 Coss -10 2 10 2 0 5 10 15 V 25 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - VDS VSD Page 6 2001-12-06 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ), par.: ID = -50 A VDD = -25 V, RGS = 25 275 SPD50P03L 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -50 A pulsed -16 V SPD50P03L mJ 225 200 -12 E AS 175 150 125 100 75 50 VGS -10 -8 0.2 VDS max 0.5 VDS max -6 0.8 V DS max -4 -2 25 0 25 50 75 100 125 C Tj 175 0 0 20 40 60 80 100 120 140 nC 180 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -36 SPD50P03L V V (BR)DSS -34 -33 -32 -31 -30 -29 -28 -27 -60 -20 20 60 100 140 C 200 Tj Page 7 2001-12-06 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPD50P03L Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-12-06 |
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