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| (R) STPS2150/A POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2A 150 V 175C 0.67 V DO-15 STPS2150 FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY AND EXTENDED BATTERY LIFE LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s DESCRIPTION 150V Power Schottky rectifier are suited for switch Mode Power Supplies on up to 24V rails and high frequency converters. Packaged in SMA or Axial, this device is intended for use in consumer & computer applications like TV, STB, PC and DVD where low drop forward voltage in required to reduce power dissipation. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current TL = 145C = 0.5 TL = 130C = 0.5 IFSM Surge non repetitive forward current Half wave, single phase, 50Hz PARM Tstg Tj dV/dt *: Repetitive peak avalanche power tp = 1s Tj = 25C Storage temperature range Maximum junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25C) SMA STPS2150A SMA DO-15 SMA DO-15 Value 150 15 2 75 150 2400 - 65 to + 150 175 10000 Unit V A A A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/5 July 2003 - Ed: 3A STPS2150/A THERMAL RESISTANCES Symbol Rth(j-l) Parameter Junction to leads Lead length = 10 mm DO-15 SMA Value 30 20 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. 0.5 0.5 0.78 0.62 0.86 0.70 Max. 1.5 1.5 0.82 0.67 0.89 0.75 Unit A mA V VR = 150V IF = 2 A IF = 4 A To evaluate the maximum conduction losses use the following equation: P = 0.59 x IF(AV) + 0.04 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(AV)(W) 1.6 1.4 1.2 Fig. 2: Average forward current versus ambient temperature ( = 0.5). IF(AV)(A) 2.2 Rth(j-a)=Rth(j-I) = 0.1 = 0.05 = 0.2 = 0.5 2.0 SMA 1.8 DO-15 =1 1.0 0.8 1.6 1.4 1.2 1.0 Rth(j-a)=100C/W 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.8 T 0.6 0.4 T IF(AV)(A) =tp/T 1.8 2.0 tp 2.2 0.2 0.0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/5 STPS2150/A Fig.5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (DO-15). IM(A) 10 DO-15 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). IM(A) 10 SMA 9 8 7 6 5 4 3 2 1 0 1.E-03 1.E-02 1.E-01 1.E+00 IM t 9 8 7 Ta=25C 6 5 Ta=25C Ta=75C 4 3 Ta=75C Ta=125C 2 1 0 1.E-03 IM Ta=125C =0.5 t(s) t =0.5 t(s) 1.E-02 1.E-01 1.E+00 Fig. 6-1: Relative variation of thermal impedance junction to ambient versus pulse duration (DO-15). Zth(j-c)/Rth(j-c) 1.0 DO-15 Fig. 6-2: Relative variation of thermal impedance junction to ambient versus pulse duration (SMA). Zth(j-c)/Rth(j-c) 1.0 SMA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse = 0.2 = 0.1 = 0.5 0.9 0.8 0.7 0.6 0.5 0.4 = 0.5 T 0.3 0.2 = 0.2 = 0.1 T tp(s) 1.E+01 =tp/T 1.E+02 tp 1.E+03 0.1 Single pulse tp(s) 1.E+00 1.E+01 =tp/T 1.E+02 tp 1.E+03 0.0 1.E-01 1.E+00 0.0 1.E-02 1.E-01 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1.E+04 Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(nF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 1.E+03 Tj=125C 1.E+02 Tj=100C 1.E+01 Tj=75C Tj=50C 100 1.E+00 1.E-01 Tj=25C VR(V) 1.E-02 0 25 50 75 100 125 150 VR(V) 10 1 10 100 1000 3/5 STPS2150/A Fig. 9-1: Forward voltage drop versus forward current (low level). IFM(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Tj=125C (typical values) Tj=25C (maximum values) Tj=125C (typical values) Tj=25C (maximum values) Tj=125C (maximum values) Fig. 9-2: Forward voltage drop versus forward current (high level). IFM(A) 100 Tj=125C (maximum values) 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 VFM(V) 1.0 1.2 1.4 1.6 1.8 Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, Cu: 35m) (SMA). Rth(j-a)(C/W) 140 SMA Fig. 11: Thermal resistance versus lead length (DO-15). Rth(C/W) 120 DO-15 Rth(j-a) 120 100 100 80 80 60 60 Rth(j-I) 40 40 20 20 S(cm) 0 0 1 2 3 4 5 0 5 10 Lleads(mm) 15 20 25 PACKAGE MECHANICAL DATA DO-15 plastic DIMENSIONS C A C REF. Millimeters Min. Max. 6.75 3.53 31 0.88 Inches Min. 0.238 0.116 1.024 0.028 Max. 0.266 0.139 1.220 0.035 A B D B 6.05 2.95 26 0.71 C D 4/5 STPS2150/A PACKAGE MECHANICAL DATA SMA (JEDEC DO-214AC) E1 DIMENSIONS REF. D Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 A1 A2 b c E A1 E E1 D b C L A2 L FOOT PRINT DIMENSIONS (in millimeters) 1.65 1.45 2.40 1.45 Ordering type STPS2150 STPS2150RL STPS2150A s Marking STPS2150 STPS2150 2150 Package DO-15 DO-15 SMA Weight 0.4 g 0.4 g 0.068 g Base qty 2000 5000 5000 Delivery mode Ammopack Tape & Reel Tape & Reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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