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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Operating Junction and Storage Temperature Range Thermal Resistance Power Dissipation Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Rating 140 160 Symbol TJ, Tstg VCEO VCB VEB JC PD IC IB 2N3715 1.17 150 4.0 7.0 10 80 60 - 65 to + 200 2N3716 1.17 150 100 4.0 7.0 10 80 CASE 1-07 TO-204AA (TO-3) Amps Amps Watts (c)3-12 Motorola, Inc. 1995 * * * * * . . . designed for medium-speed switching and amplifier applications. These devices feature: Silicon NPN Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA REV 7 Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed. PD, POWER DISSIPATION (WATTS) Total Switching Time at 3 A typically 1.15 s Gain Ranges Specified at 1 A and 3 A Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A Excellent Safe Operating Areas Complement to 2N3791-92 100 120 20 40 60 80 0 0 Figure 1. Power-Temperature Derating Curve 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Motorola Bipolar Power Transistor Device Data 175 200 10 AMPERE POWER TRANSISTORS SILICON NPN 60 - 80 VOLTS 150 WATTS 2N3715 2N3716 Order this document by 2N3715/D NPN _C/W Volts Volts Volts Unit _C IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse Width ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Motorola Bipolar Power Transistor Device Data SWITCHING TIMES ( s) (IC = 5.0 A, IB1 = IB2 = 0.5 Adc) Rise Time Storage Time Fall Time Switching Times (Figure 2) Small Signal Current Gain (VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) Base-Emitter Voltage (1) (IC = 3.0 Adc, VCE = 2.0 Vdc) Base-Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) Collector-Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) DC Current Gain (1) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = - 1.5 Vdc) (VCE = 100 Vdc, VBE = - 1.5 Vdc) (VCE = 60 Vdc, VBE = - 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE = - 1.5 Vdc, TC = 150_C) Emitter-Base Cutoff Current (VEB = 7.0 Vdc) 0.3 0.5 0.7 1.0 1.5 0.1 0.1 0.2 IB1 = IB2 0.2 tr tf 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) ts v 300 s, Duty Cycle v 2.0%. Characteristic Figure 2. Typical Switching Times 3.0 5.0 +11.5 V 2N3715, 2N3716 2N3715, 2N3716 2N3715, 2N3716 2N3715, 2N3716 -9 V Hg RELAYS 100 1W All Types All Types All Types 2N3715 2N3716 2N3715 2N3716 2N3715 2N3716 + 62 V toff ~ 1.7 ms ton ~ 30 s VCEO(sus)* VCE(sat)* VBE(sat)* -9 V Symbol A TEST CIRCUIT ~ 4.8 ms VBE* IEBO ICEX hFE* hfe tr ts tf 100 - 4 V 900 20 1W WAVE SHAPE AT POINT A Min 4.0 50 30 60 80 -- -- -- -- -- -- -- -- IC = 5 A, IB1 = IB2 = 0.5 A f 150 cps DUTY CYCLE 2% 6 4W 2N3715 2N3716 0.45 0.3 0.4 Typ + 30 V 900 100 Max 150 -- 1.5 1.5 0.8 1.0 1.0 10 10 5.0 -- -- -- 3-13 mAdc mAdc Unit Vdc Vdc Vdc Vdc s -- -- 2N3715 2N3716 IC, COLLECTOR CURRENT (AMPS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 2N3715, 2N3716 1000 700 500 300 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0 0.4 0.8 VCE = 2 V SEE NOTE 2 TJ = 175C - 40C 25C 5.0 10 20 50 VCE = 2 V SEE NOTES 1, 2 IB , BASE CURRENT (mA) TJ = 175C - 40C 25C 100 200 500 1000 1.2 1.6 2.0 IB, BASE CURRENT (mA) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Current versus Base Current Figure 4. Base Current-Voltage Variations IC, COLLECTOR CURRENT (AMPS) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.1 2N3715, 2N3716 TJ = 175C 25C - 40C VCE = 2 V SEE NOTE 2 0.4 0.8 1.2 1.6 2.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 5. Collector Current-Voltage Variations NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175_C. NOTE 2. Pulse test: pulse width 200 sec, duty cycle 1.5%. 3-14 Motorola Bipolar Power Transistor Device Data 2N3715 2N3716 VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 10 20 30 50 70 IC = 1 A 100 200 IB, BASE CURRENT (mA) 300 500 700 1000 2000 IC = 3 A IC = 5 A TJ = 25C - 40C 175C SEE NOTE 2 Figure 6. Collector-Emitter Saturation Voltage Variations 1.4 VBE(sat) , BASE-EMITTER SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0.1 10 20 30 50 70 100 200 IB, BASE CURRENT (mA) 300 500 700 TJ = 25C - 40C 175C SEE NOTE 2 1000 2000 IC = 1 A IC = 3 A IC = 5 A Figure 7. Base-Emitter Saturation Voltage Variations 10 7.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 - 0.6 VCE = VCEO - 20 V SEE NOTE 2 100 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1 TJ = 175C TJ = 100C 10 100 1000 VCE = VCEO - 20 V SEE NOTE 2 10,000 100,000 TJ = 175C TJ = 100C REVERSE - 0.4 - 0.2 0 FORWARD 0.2 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 8. Collector Current versus Base-Emitter Voltage Figure 9. Collector Current versus Base-Emitter Resistance Motorola Bipolar Power Transistor Device Data 3-15 2N3715 2N3716 200 hFE , CURRENT GAIN TJ = 175C 150 hFE I- + IBC ) ICBO ICBO 100 25C VCE = 2 V 50 - 40C 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Current Gain Variations f , CURRENT GAIN -- BANDWIDTH PRODUCT (mc) 8 6 4 2 VCE = 6 V 0 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 Figure 11. Current Gain -- Bandwidth Product versus Collector Current SAFE OPERATING AREAS 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 DC to 5 ms 500 s 1 ms 50 s 250 s 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 DC to 5 ms 500 s 1 ms 50 s 250 s IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 0 10 20 30 40 50 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 0 10 80 20 30 40 50 60 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 90 Figure 12. 2N3715 The Safe Operating Area Curves indicate IC - VCE limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter Figure 13. 2N3716 short. (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TJ, the power-temperature derating curve must be observed for both steady state and pulse power conditions. 3-16 Motorola Bipolar Power Transistor Device Data 2N3715 2N3716 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 Motorola Bipolar Power Transistor Device Data *2N3715/D* 3-17 2N3715/D |
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