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| Silicon Schottky Diode BAT 63 q Low barrier diode for mixer and detectors up to GHz frequencies Type Ordering Code (tape and reel) Q62702-A1004 1 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package BAT 63 63 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junction-ambient1) Symbol Values 3 100 150 - 55 ... + 150 Unit V mA C C VR IF Tj Tstg Rth JA 450 K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BAT 63 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.2 V, f = 1 MHz Case capacitance Differential resistance V = 0, f = 10 kHz Series inductance Value typ. max. Unit IR - - 190 0.65 0.1 30 2 10 nA mV - 300 pF - 0.85 pF - - k - - nH - - VF CT CC R0 LS Semiconductor Group 2 BAT 63 Forward current IF = f (VF) Forward current IF = f (TS; TA) Permissible Pulse load RthJS = f (tp) TA = 25 C Permissible Pulse load IFmax / IFDC = f (tp) Semiconductor Group 3 |
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