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NPN Silicon Transistors With High Reverse Voltage
High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BF 421, BF 423 (PNP)
q
BF 420 BF 422
2 3 1
Type BF 420 BF 422
Marking -
Ordering Code Q62702-F531 Q62702-F495
Pin Configuration 1 2 3 E C B
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE = 2.7 k Collector-base voltage Emitter-base voltage Collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC

Symbol VCE0 VCER VCB0 VEB0 IC IBM Tj Tstg
Values BF 420 - 300 300
Unit BF 422 250 - 250 5 50 100 830 150 - 65 ... + 150 mW C mA V
Total power dissipation, TC = 88 C Ptot
150 75
K/W
1) 2)
For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
Semiconductor Group
1
5.91
BF 420 BF 422
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BF 422 Collector-emitter breakdown voltage IC = 10 A, RBE = 2.7 k BF 420 Collector-base breakdown voltage IC = 10 A BF 420 BF 422 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 200 V Collector cutoff current VCE = 200 V, RBE = 2.7 k , TA = 150 C Emitter cutoff current, VEB = 5 V DC current gain IC = 100 A, VCE = 20 V IC = 25 mA, VCE = 20 V Collector-emitter saturation voltage1) IC = 25 mA, Tj =150 C AC characteristics Transition frequency IC = 10 mA, VCE = 10 V, f = 20 MHz Output capacitance VCB = 30 V, f = 1 MHz fT Cobo - - 100 0.8 - - MHz pF V(BR)CE0 V(BR)CER V(BR)CB0 300 250 V(BR)EB0 ICB0 ICER IEB0 hFE 15 50 VCEsatRF - - - - - - 20 V 5 - - - - - - - - - - - - 10 10 10 - nA
A
Values typ. max.
Unit
250 300
- -
- -
V
1)
Pulse test: t 300 s, D 2 %.
Semiconductor Group
2
BF 420 BF 422
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA) VCB = 200 V
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE) VCE = 20 V, TA = 25 C
Semiconductor Group
3
BF 420 BF 422
DC current gain hFE = f (IC) VCE = 20 V, TA = 25 C
Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz
Output capacitance Cobo = f (VCB) IC = 0, f = 1 MHz
Semiconductor Group
4

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