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| Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Isolated mounting tab BYV29F, BYV29X series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V k 1 a 2 VF 1.03 V IF(AV) = 9 A trr 60 ns GENERAL DESCRIPTION Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general. The BYV29F series is supplied in the SOD100 package. The BYV29X series is supplied in the SOD113 package. PINNING PIN 1 2 tab DESCRIPTION cathode (k) anode (a) isolated SOD100 case SOD113 case 1 2 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IF(AV) IFSM PARAMETER Peak repetitive reverse voltage Continuous reverse voltage Average forward current2 Non-repetitive peak forward current Storage temperature Operating junction temperature CONDITIONS BYV29F/BYV29X Ths 138C1 square wave; = 0.5; Ths 90 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 9 100 110 150 150 -500 500 500 UNIT V V A A A C C Tstg Tj 1 Ths de-rating for thermal stability. 2 Neglecting switching and reverse current losses February 1999 1 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS BYV29F, BYV29X series MIN. - TYP. MAX. UNIT 1500 V SOD100 package; R.H. 65%; clean and dustfree Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. 65%; clean heatsink and dustfree Capacitance from pin 2 to external heatsink f = 1 MHz - - 2500 V Cisol - 10 - pF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air. MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 10 A; dIF/dt = 10 A/s MIN. TYP. 0.90 1.05 1.20 2.0 0.1 40 50 4.0 2.5 MAX. 1.03 1.25 1.40 50 0.35 60 60 5.5 UNIT V V V A mA nC ns A V February 1999 2 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series I dI F dt F 12 10 PF / W Vo = 0.89V Rs = 0.019 Ohms BYV29 Ths(max) / C a = 1.57 1.9 84 95 106 117 128 139 t 2.2 rr time 8 4 6 4 2.8 Q I R I s 10% 100% 2 0 rrm 0 2 4 IF(AV) / A 6 8 150 10 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns I F 1000 IF=10 A 100 time VF V VF time fr 1 1 10 Tj = 25 C Tj = 100C 1A 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25C and 100C 15 PF / W Vo = 0.8900 V Rs = 0.0190 Ohms BYV29 Ths(max) / C D = 1.0 67.5 10 Irrm / A IF=10A 0.5 10 0.2 0.1 5 tp T t 95 1 IF=1A I tp 122.5 0.1 D= T 0 0 5 IF(AV) / A 10 150 15 0.01 1 Tj = 25 C Tj = 100C 10 -dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x D. Fig.6. Maximum Irrm at Tj = 25C and 100C. February 1999 3 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series 30 IF / A Tj=150 C Tj=25 C BYW29 10 Transient thermal impedance, Zth j-hs (K/W) 1 20 0.1 typ 10 max 0.01 P D tp D= tp T t 0 0 0.5 1 VF / V 1.5 2 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F 10s Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Qs / nC Fig.9. Transient thermal impedance Zth j-hs= f(tp) 1000 100 IF = 10 A 2A 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25C February 1999 4 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYV29F, BYV29X series 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 M a 0.9 0.7 0.55 max 1.3 5.08 top view Fig.10. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 5 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g 3.2 3.0 10.3 max BYV29F, BYV29X series 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 1.0 (2x) 0.6 2.54 5.08 0.5 2.5 0.9 0.7 Fig.11. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 6 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV29F, BYV29X series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 7 Rev 1.400 |
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