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| GaAs FET CF 739 Features N-channel dual-gate GaAs MES FET q Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners q Low noise q High gain q Low input capacitance q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CF 739 Marking MS Ordering Code (tape and reel) Q62702-F1215 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Gate 1-source peak current Gate 2-source peak current Total power dissipation, TS 66 C2) Channel temperature Storage temperature range Thermal Resistance Channel - soldering point3) 1) 2) 3) Symbol VDS - VG1S - VG2S ID + IG1SM + IG2SM Ptot Tch Tstg Values 10 6 6 80 1 1 240 150 - 55 ... + 150 Unit V mA mW C RthchS 350 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. TS is measured on the source lead at the soldering point to the pcb. Semiconductor Group 1 04.96 CF 739 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 100 A, - VG1S = - VG2S = 4 V Gate 1 leakage current - VG1S = 5 V, VG2S = VDS = 0 Gate 2 leakage current - VG2S = 5 V, VG1S = VDS = 0 Drain current VG1S = 0, VG2S = 0, VDS = 3 V Gate 1-source pinch-off voltage VG2S = 0, VDS = 5 V, ID = 200 A Gate 2-source pinch-off voltage VG1S = 0, VDS = 5 V, ID = 200 A AC Characteristics Forward transconductance VDS = 5 V, VG2S = 2 V, ID = 10 mA, f = 1 kHz Gate 1 input capacitance VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz Output capacitance VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz Noise figure VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz Power gain VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz Control range VG2S = 2 V ... - 3 V gfs Cgfss Cdss F - - Gps - - Gpsc Values typ. max. Unit V(BR)DS - IG1SS - IG2SS IDSS - VG1S(P) - VG2S(P) 10 - - 6 - - - - - - - - - 20 20 60 2.5 2.5 V A mA V - - - 25 0.95 0.5 - - - mS pF dB 1.8 1.1 17 22 50 - - - - - - Semiconductor Group 2 CF 739 Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Output characteristics ID = f (VDS) VG2S = 2 V Gate 1 forward transconductance gfs1 = f (VG1S) VDS = 5 V, f = 1 kHz Gate 1 forward transconductance gfs1 = f (VG2S) VDS = 5 V, f = 1 kHz Semiconductor Group 3 CF 739 Drain current ID = f (VG1S) VDS = 5 V Drain current ID = f (VG2S) VDS = 5 V Gate 1 input transconductance Cg1ss = f (ID) VG2S = 2 V, VDS = 5 V, f = 0.1 - 1 GHz Output capacitance Cdss = f (VDS) VG2S = 2 V, ID = 10 mA, f = 0.1 - 1 GHz Semiconductor Group 4 CF 739 Common Source Admittance Parameters, G2 RF grounded Gate 1 input admittance y11s VDS = 5 V, VG2S = 2 V, ID = 10 mA Gate 1 forward transfer admittance y21s VDS = 5 V, VG2S = 2 V, ID = 10 mA Output admittance y22s VDS = 5 V, VG2S = 2 V, ID = 10 mA Semiconductor Group 5 CF 739 Common Source S-Parameters, G2 RF grounded f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG VDS = 5 V, VG2S = 2 V, ID = 10 mA, Z0 = 50 0.06 0.08 0.10 0.15 0.20 0.25 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.50 1.60 1.80 2.00 2.20 2.40 2.50 2.60 2.80 3.00 0.999 0.998 0.998 0.997 0.993 0.989 0.987 0.975 0.965 0.951 0.935 0.918 0.900 0.877 0.883 0.773 0.744 0.720 0.666 0.614 0.556 0.497 0.466 0.449 0.408 0.375 - 2.4 - 3.2 - 4.1 - 6.0 - 8.0 - 10.1 - 12.1 - 16.0 - 19.9 - 23.8 - 27.5 - 31.4 - 35.2 - 39.0 - 46.6 - 53.7 - 56.8 - 60.1 - 66.2 - 72.8 - 80.3 - 87.2 - 90.2 - 92.8 - 97.1 - 101.7 3.21 3.21 3.21 3.22 3.22 3.21 3.21 3.18 3.15 3.12 3.09 3.05 3.03 3.02 2.96 2.85 2.77 2.74 2.64 2.59 2.53 2.45 2.38 2.34 2.24 2.17 176.9 175.5 174.3 171.4 168.4 165.5 162.5 156.6 150.7 145.0 139.3 134.0 128.5 122.9 111.4 99.7 94.4 89.2 78.9 68.6 57.4 45.6 40.0 34.5 23.6 12.2 0.001 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.012 0.012 0.012 0.010 0.009 0.008 0.005 0.002 81.8 85.8 90.8 84.2 88.1 84.4 83.3 79.6 78.6 78.0 76.6 73.3 70.4 69.5 66.4 59.9 59.9 57.5 54.1 49.2 43.7 39.4 35.2 32.2 25.1 - 25.0 0.963 0.963 0.962 0.962 0.962 0.962 0.962 0.961 0.960 0.960 0.961 0.958 0.956 0.955 0.953 0.949 0.949 0.949 0.948 0.945 0.941 0.937 0.936 0.936 0.937 0.934 - 1.0 - 1.4 - 1.7 - 2.5 - 3.4 - 4.3 - 5.2 - 6.8 - 8.5 - 10.3 - 12.0 - 13.7 - 15.4 - 17.0 - 20.6 - 24.3 - 26.2 - 27.9 - 31.5 - 35.3 - 39.4 - 44.4 - 47.0 - 49.6 - 54.6 - 59.1 Semiconductor Group 6 CF 739 S11, S22 = f (f), Z-plane VDS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50 S12, S21 = f (f) VDS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50 Semiconductor Group 7 |
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