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| TetraFET D1053UK METAL GATE RF SILICON FET MECHANICAL DATA B B A A K D E C (2 pls) 2 1 3 45 98 76 O (2 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W - 28V - 1GHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN F G H J I M N * SUITABLE FOR BROAD BAND APPLICATIONS * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DB PIN 1 PIN 3 PIN 5 PIN 7 PIN 9 SOURCE (COMMON) DRAIN 2 DRAIN 4 GATE 3 GATE 1 DIM A B C D E F G H I J K M N O mm 1.52 1.52 45 16.38 6.35 18.41 12.70 5.08 24.76 1.52 0.81R 0.13 2.16 1.65R PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 DRAIN 3 GATE 4 GATE 2 Tol. 0.13 0.13 5 0.26 0.13 0.13 0.26 0.13 0.13 0.13 0.13 0.02 0.13 0.13 Inches 0.060 0.060 45 0.645 0.250 0.725 0.500 0.200 0.975 0.060 0.032R 0.005 0.085 0.065R Tol. 0.005 0.005 5 0.010 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.001 0.005 0.005 * HIGH GAIN - 7.5 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 400 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 175W 70V 20V 5A -65 to 150C 200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95 D1053UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Gate Threshold Voltage Matching Between Sides VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V ID = 10mA ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A VDS = VGS 1 0.8 70 Typ. Max. Unit V 1 1 7 mA A V mhos 0.1 V VGS(th)match TOTAL DEVICE GPS VSWR Ciss Coss Crss Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance PO = 50W VDS = 28V f = 1GHz IDQ = 0.8A 7.5 45 20:1 dB % -- 60 30 2.5 pF pF pF PER SIDE VDS = 0 VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 1.0C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95 |
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