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DG611/612/613
Vishay Siliconix
High-Speed, Low-Glitch D/CMOS Analog Switches
FEATURES
D D D D D D D Fast Switching-- tON: 12 ns Low Charge Injection: "2 pC Wide Bandwidth: 500 MHz 5-V CMOS Logic Compatible Low rDS(on): 18 W Low Quiescent Power : 1.2 nW Single Supply Operation
BENEFITS
D D D D D D Improved Data Throughput Minimal Switching Transients Improved System Performance Easily Interfaced Low Insertion Loss Minimal Power Consumption
APPLICATIONS
D D D D D D D D Fast Sample-and-Holds Synchronous Demodulators Pixel-Rate Video Switching Disk/Tape Drives DAC Deglitching Switched Capacitor Filters GaAs FET Drivers Satellite Receivers
DESCRIPTION
The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup. The DG611 and DG612 differ only in that they respond to opposite logic levels. The versatile DG613 has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, one DPDT. For additional information see Applications Note AN207 (FaxBack number 70605).
Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611/612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611
IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Dual-In-Line and SOIC Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3 9 10 Key S1 V- NC GND S4 4 5 6 7 8 3 2
DG611
D1 IN1 NC IN2 D2 1 20 19 18 17 LCC Top View 16 15 14 11 12 13 S2 V+ NC VL S3
Four SPST Switches per Package
TRUTH TABLE
Logic
0 1
DG611
ON OFF Logic "0" v 1 V Logic "1" w 4 V
DG612
OFF ON
D4 IN4 NC IN3 D3
Document Number: 70057 S-00399--Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
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DG611/612/613
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG613
IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Dual-In-Line and SOIC Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ NC VL S3 D3 IN3 GND S4 Key S1 V- 4 5 6 7 8 9 10 11 12 13 LCC Top View 15 14 3 2
DG613
D1 IN1 NC 1 IN2 D2 19 18 17 16 S2 V+ 20
Four SPST Switches per Package
TRUTH TABLE
Logic SW1, SW4
OFF ON Logic "0" v 1 V Logic "1" w 4 V
NC 0 VL S3 1
SW2, SW3
ON OFF
D4 IN4 NC IN3 D3
ORDERING INFORMATION
Temp Range DG611/612
16-Pin Plastic DIP -40 to 85 C 40 85_C 16-Pin Narrow SOIC DG611DJ DG612DJ DG611DY DG612DY DG611AK/883, 5962-9325501MEA DG612AK/883, 5962-9325502MEA DG611AZ/883, 5962-9325501M2A DG612AZ/883, 5962-9325502M2A
Package
Part Number
16-Pin CerDIP -55 to 125 C 55 125_C LCC-20
DG613
-40 to 85_C 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin CerDIP LCC-20 DG613DJ DG613DY DG613AK/883, 5962-9325503MEA DG613AZ/883, 5962-9325503M2A
-55 to 125_C
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 21 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to 21 V V- to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -19 V to 0.3 V VL to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1 V to (V+) + 1 V or 20 mA, whichever occurs first VINa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -1 V to (V+) + 1 V or 20 mA, whichever occurs first VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -0.3 V to (V-) + 16 V or 20 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "30 mA Current, S or D (Pulsed at 1 ms, 10% Duty Cycle) . . . . . . . . . . . . . "100 mA Storage Temperature: CerDIP . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Plastic . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C 470 mW 600 mW 900 mW 900 mW
Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-Pin LCCe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C
RECOMMENDED OPERATING RANGE
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V to 21 V V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -10 V to 0 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 V to V+ www.vishay.com S FaxBack 408-970-5600 VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to VL VANALOG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V- to (V+) - 5 V
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Document Number: 70057 S-00399--Rev. G, 13-Sep-99
DG611/612/613
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified Parameter P Analog Switch
Analog Signal Rangee Switch On-Resistance Resistance Match Bet Ch. Source Off Leakage Drain Off Leakage Current Switch On Leakage Current VANALOG rDS(on) IS = -1 mA, VD = 0 V DrDS(on) IS(off) ID(off) ID(on) VS = 0 V, VD = 10 V VS = 10 V, VD = 0 V VS = VD = 0 V V- = -5 V, V+ = 12 V Full Room Full Room Room Hot Room Hot Room Hot 18 -5 7 45 60 -5 7 45 60 V
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol S bl
V+ V = 15 V, V- = -3 V VV 3 VL = 5 V, VIN = 4 V, 1 Vf
Tempb T
Typ Tc
Mind Maxd Mind Maxd U i Unit
W
2 "0.001 "0.001 "0.001 -0.25 -20 -0.25 -20 -0.4 -40 0.25 20 0.25 20 0.4 40 -0.25 -20 -0.25 -20 -0.4 -40 0.25 20 0.25 20 0.4 40 nA A
Digital Control
Input Voltage High Input Voltage Low Input Current Input Capacitance VIH VIL IIN CIN Full Full Room Hot Room 0.005 5 -1 -20 4 1 1 20 -1 -20 4 1 1 20 V mA pF
Dynamic Characteristics
Off State Input Capacitance Off State Output Capacitance On State Input Capacitance Bandwidth Turn-On Timee Turn-Off Timee Turn-On Time Turn-Off Time Charge Injectione Ch. Injection Changee, g Off Isolatione Crosstalke CS(off) CD(off) CS(on) BW tON tOFF tON tOFF Q DQ OIRR XTALK VS = 0 V VD = 0 V VS = VD = 0 V RL = 50 W RL = 300 W, CL = 3 pF, VS = "2 V , p, S T t Ci it Figure 2 See Test Circuit, Fi RL = 300 W, CL = 75 pF VS = "2 V See Test Circuit, Figure 2 CL = 1 nF, VS= 0 V CL = 1 nF, bVS b v 3 V RIN = 50 W, RL = 50 W f = 5 MHz RIN = 10 W, RL = 50 W, f = 5 MHz Room Room Room Room Room Room Room Full Room Full Room Room Room Room 3 2 10 500 12 8 19 16 4 3 74 87 4 4 pC 25 20 35 50 25 35 25 20 35 50 25 35 ns MHz pF F
dB
Power Supplies
Positive Supply Curent Negative Supply Current Logic Supply Current Ground Current I+ I- VIN = 0 V or 5 V IL IGND Room Full Room Full Room Full Room Full 0.005 -0.005 0.005 -0.005 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5
A mA
Document Number: 70057 S-00399--Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
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DG611/612/613
Vishay Siliconix
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions Unless Otherwise Specified Parameter P Analog Switch
Analog Signal Rangee Switch On-Resistance VANALOG rDS(on) IS = -1 mA, VD = 1 V Full Room 25 0 7 60 0 7 60 V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol S bl
V+ = 15 V, V- = -3 V VL = 5 V, VIN = 4 V, 1 Vf
Tempb T
Typ Tc
Mind
Maxd
Mind
Maxd
Unit Ui
Dynamic Characteristics
Turn-On Timee Turn-Off Timee tON tOFF RL = 300 W, CL = 3 pF, VS = 2 V , p, See Test Circuit, Fi S T t Ci it Figure 2 Room Room 15 10 30 25 30 ns 25
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. DQ = bQ at VS = 3 V - Q at VS = -3 Vb.
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Document Number: 70057 S-00399--Rev. G, 13-Sep-99
DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
400 r DS(on) Drain-Source On-Resistance ( W ) - 350 300 250 200 150 100 50 0 -5 -4 -2 0 2 4 6 VD - Drain Voltage (V) 8 10 12 V+ = 5 V V- = -5 V V+ = 15 V V- = -3 V V+ = 12 V V- = -5 V r DS(on) Drain-Source On-Resistance ( W ) - IS = -1 mA 400 350 300 250 200 150 25_C 100 50 0 -4 -2 0 2 4 6 8 VD - Drain Voltage (V) 10 12 125_C -55_C V+ = 15 V V- = -3 V IS = -1 mA
rDS(on) vs. VD and Temperature
Leakage Current vs. Analog Voltage
3 V+ = 15 V V- = -3 V I S(off), I D(off)- Leakage (A) 10 nA 1 nA
Leakage Currents vs. Temperature
2 I S, I D - Leakage Current (pA)
1 IS(off), ID(off) 0
100 pA ID(on) 10 pA IS(off), ID(off)
-1 ID(on)
-2
1 pA
-3 -4 -2 0 2 4 6 8 VD or VS - Drain or Source Voltage (V) 10
0.1 pA -55 -25 0 25 50 Temperature (_C) 75 100 125
6
Input Switching Threshold vs. VL
24 V+ = 15 V V- = -3 V 22 20 18
Switching Times vs. Temperature
5 V TH - Logic Input Voltage (V)
tON
4 Time (ns)
16 14 12 10 8 6 V+ = 15 V V- = -3 V RL = 300 W CL = 10 pF tOFF
3
2
1
4 2
0 0 5 10 15 VL - Logic Supply Voltage (V)
0 -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C)
Document Number: 70057 S-00399--Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-5
DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Analog Voltage
20 V+ = 15 V V- = -3 V -100 10 Qd Charge (pC) -80 0 Qs -10 -40 (dB) Crosstalk -120 V+ = 15 V V- = -3 V
Crosstalk and Off Isolation vs. Frequency
-60 Off Isolation
-20 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 VANALOG - Analog Voltage (V)
-20 1 10 f - Frequency (MHz) 100
-3 dB Bandwidth/Insertion Loss vs. Frequency
0 RL = 50 W -4 6 5 4 3 Supply Current (mA) Insertion Loss (dB) -8 2 1 0 -1 -2 -3 -4 -24 1 10 100 1000 -5
Supply Currents vs. Switching Frequency
V+ = 15 V V- = -3 V VL = 5 V CX = 0, 5 V I+
-12 -3 dB Point -16
IL
I-
-20
1k
100 k
100 k f - Frequency (Hz)
1M
10 M
f - Frequency (MHz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ VL S INX Input Logic Level Translator Driver DMOS Switch D
V-
FIGURE 1.
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Document Number: 70057 S-00399--Rev. G, 13-Sep-99
DG611/612/613
Vishay Siliconix
TEST CIRCUITS
+5 V +15 V 5V Logic Input VL "2 V S IN GND V- RL 300 W CL Switch Output 0V tON V- CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) 20% tOFF V+ D VO 0V VS= "2 V 90% 50% tr < 10 ns tf < 10 ns
FIGURE 2. Switching Time
C
+5 V
+15 V
C
+5 V
+15 V
VS Rg = 50 W
VL S1 IN1 S2 IN2 GND
V+ D1 50 W VO RL V- C
Rg
VL S IN
V+ D
VO
1 V, 4 V NC 1 V, 4 V D2
Vg 5V
CL 1 nF V-
GND
-3 V XTALK Isolation = 20 log C = RF bypass
VS VO -3 V
FIGURE 3. Charge Injection
FIGURE 4. Crosstalk
APPLICATIONS
High-Speed Sample-and-Hold In a fast sample-and-hold application, the analog switch characteristics are critical. A fast switch reduces aperture uncertainty. A low charge injection eliminates offset (step) errors. A low leakage reduces droop errors. The CLC111, a fast input buffer, helps to shorten acquisition and settling times. A low leakage, low dielectric absorption hold capacitor must be used. Polycarbonate, polystyrene and polypropylene are good choices. The JFET output buffer reduces droop due to its low input bias current. (See Figure 5.) Pixel-Rate Switch Windows, picture-in-picture, title overlays are economically generated using a high-speed analog switch such as the DG613. For this application the two video sources must be sync locked. The glitch-less analog switch eliminates halos. (See Figure 6.)
Document Number: 70057 S-00399--Rev. G, 13-Sep-99 www.vishay.com S FaxBack 408-970-5600
GaAs FET Drivers Figure 7 illustrates a high-speed GaAs FET driver. To turn the GaAs FET on 0 V are applied to its gate via S1, whereas to turn it off, -8 V are applied via S2. This high-speed, low-power driver is especially suited for applications that require a large number of RF switches, such as phased array radars.
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DG611/612/613
Vishay Siliconix
APPLICATIONS
Input Buffer +5 V +12 V Output Buffer Analog Input 75 W 5 V Control IN
1/ 4
CLC111
S
D
+ LF356 -
"5 V Output to A/D
DG611
CHOLD 650 pF Polystyrene
-5 V
FIGURE 5. High-Speed Sample-and-Hold
+5 V Background
+12 V Output Buffer D + CLC410 - 250 W 250 W 75 W Composite Output
75 W
1/ CLC114 2
Titles
75 W
5 V Control
1/ 2
DG613
-5 V
FIGURE 6. A Pixel-Rate Switch Creates Title Overlays
+5 V
S1 IN1
VL
V+
D1
RF IN
GaAs
RF OUT
1/ 2
DG613
D2
S2 5V IN2 GND V-
-8 V
FIGURE 7. A High-Speed GaAs FET Driver that Saves Power
www.vishay.com S FaxBack 408-970-5600 Document Number: 70057 S-00399--Rev. G, 13-Sep-99
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