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| DSEP 30-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V 300 Type TO-247 AD DSEP 30-03A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 300 1.2 0.3 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Features * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages Outlines.pdf TC = 25C mounting torque typical 165 0.8...1.2 6 Symbol IR Conditions VR = VRRM; VR = VRRM; IF = 30 A; TVJ = 25C TVJ = 150C TVJ = 150C TVJ = 25C Characteristic Values typ. max. 250 1 1.14 1.55 0.9 0.25 A mA V V K/W K/W ns 3.5 A VF RthJC RthCH trr IRM IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s TVJ = 100C 25 2.5 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 1-2 439 DSEP 30-03A 60 A IF 40 TVJ=150C TVJ=100C TVJ= 25C 20 200 5 0 0.0 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt 10 400 Qr 800 TVJ = 100C nC 600 IF = 60A IF = 30A IF = 15A 15 VR = 150V IRM 20 IF = 60A IF = 30A IF = 15A 30 A 25 TVJ = 100C VR = 150V 0.5 1.0 VF V 1.5 Fig. 1 Forward current IF vs. VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns TVJ = 100C VR = 150V VFR 12 14 V Fig. 3 Peak reverse current IRM versus -diF/dt TVJ = 100C IF = 30A tfr 0.8 VFR 0.6 10 0.4 0.2 8 0.0 600 A/s 1000 800 diF/dt 1.2 s 1.0 tfr 1.4 1.2 Kf 1.0 IRM trr 80 70 IF = 60A 60 Qr IF = 30A IF = 15A 0.8 0.6 50 0.4 0 40 80 120 C 160 TVJ 40 0 200 400 600 -diF/dt 800 A/s 1000 0 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.005 0.0003 0.04 0.001 0.0001 0.00001 DSEP30-03A/DSEC 60-03A NOTE: Fig. 2 to Fig. 6 shows typical values 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 2-2 439 |
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