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GL480/GL480Q/GL483Q GL480/GL480Q GL483Q s Features 1. Narrow beam angle ( : TYP. 13 ) 2. Radiant flux ( e : MIN. 0.7mW at I F = 20mA ) 3. Compact, high reliability by chip coating ( GL480Q/GL483Q ) 4. Long lead type ( GL483Q ) Infrared Emitting Diode s Outline Dimensions GL480/GL480Q 2- C0.5 Rest of gate 0.3MAX. 3.0 0.2 1.5 Emitter center 1.15 0.75 ( Unit : mm ) Pink transparent epoxy resin (GL480 ) Transparent epoxy resin (GL480Q ) 4.0 0.2 1.7 0.5MIN. + 17.5 - 1.5 1.0 0.8MAX. R0.8 0.1 60 0.15 2 s Applications 2.95 0.2 2.15 0.2 1 1. Copiers 2. Floppy disk drives 3. Optoelectronic switches 2.54 1.6 2- 0.4 1 Cathode 2 Anode 2.8 1 GL483Q 0.2 2 - C0.5 3.0 2 1.5 Emitter center 1.15 0.75 Transparent epoxy resin Rest of gate 0.3MAX. 4.0 0.2 2 60 0.8MAX. 18.5 1.6 0.2 0.15 1.7 2- 0.6 40.0 1 3.0 1 2.95 0.2 2.15 0.2 0.5MIN. 2.54 1.6 2 - 0.4 1 Cathode 2 Anode s Absolute Maximum Ratings Parameter Power dissipation Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature *2 Soldering temperature Symbol P IF I FM VR T opr T stg T sol ( Ta = 25C ) Rating 75 50 1 6 - 25 to + 85 - 40 to + 85 260 Unit mW mA A V C C C 2.8 1 2 *1 Pulse width<=100 s, Duty ratio = 0.01 *2 For 3 seconds at the position of 1.4mm from the bottom face of resin package. " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." GL480/GL480Q/GL483Q s Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Terminal capacitance Response frequency Radiant flux Peak emission wavelength Half intensity wavelength Half intensity angle Symbol VF V FM IR Ct fc e p Conditions IF = 20mA IFM = 0.5A VR = 3V VR = 0, f = 1MHz IF = 20mA IF = 5mA IF = 5mA IF = 20mA MIN. 0.7 TYP. 1.2 3.0 50 300 950 45 13 ( Ta = 25C ) MAX. 1.4 4.0 10 3.0 Unit V V A pF kHz mW nm nm Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Peak Forward Current vs. Duty Ratio 10000 5000 Pulse width <= 100 s T a = 25C 50 Peak forward current I FM ( mA ) 2000 1000 500 200 100 50 20 0 - 25 0 25 50 75 85 100 10 10 -3 2 Forward current I F ( mA ) 40 30 20 10 5 10 - 2 2 5 10 - 1 2 5 1 Ambient temperature Ta ( C ) Duty ratio Fig. 3 Spectral Distribution 100 I F = 5mA T a = 25C Relative radiant intensity ( % ) 80 Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 1000 I F = const. Peak emission wavelength P ( nm ) 975 60 950 40 925 20 0 880 900 920 940 960 980 1000 1020 1040 900 - 25 0 25 50 75 100 Wavelength ( nm ) Ambient temperature T a ( C ) GL480/GL480Q/GL483Q Fig. 5 Forward Current vs. Forward Voltage 500 T a = 75C 200 Forward current I F ( mA ) 100 50 20 10 5 2 0.2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 - 25 0 25 50 75 100 50C 25C 0C Relative radiant flux - 20C 5 Fig. 6 Relative Radiant Flux vs. Ambient Temperature 20 10 IF = const. 2 1 0.5 Forward voltage VF ( V ) Ambient temperature Ta ( C ) Fig. 7 Radiant Flux vs. Forward Current 10 5 T a = 25C Fig. 8 Relative Radiant Intensity vs. Distance 100 T a = 25C 1 0.5 DC 0.2 0.1 0.05 0.02 0.01 1 Relative radiant intensity ( % ) 2 Radiant flux e ( mW ) Pulse (Pulse width <=100 s ) 10 1 10 100 Forward current I F ( mA ) 1000 0.1 0.1 1 10 Distance to detector d ( mm) 100 Fig. 9 Relative Collector Current vs. Distance ( Detector : PT480 ) 100 I F = 20mA T a = 25C Relative collector current ( % ) Fig.10 Radiation Diagram - 20 - 10 0 100 - 30 Relative radiant intensity ( % ) 80 (GL480Q/GL483Q ) + 10 + 20 ( Ta= 25C ) + 30 10 - 40 60 + 40 - 50 1 - 60 - 70 - 80 0.1 0.1 10 Distance to detector d ( mm) 1 100 - 90 40 + 50 + 60 20 + 70 + 80 + 90 0 Angular displacement GL480/GL480Q/GL483Q Fig.11 Radiation Diagram (GL480 ) ( Ta = 25C ) - 20 - 10 0 100 - 30 Relative radiant intensity ( % ) 80 + 30 + 10 + 20 - 40 60 + 40 - 50 - 60 - 70 - 80 - 90 40 + 50 + 60 20 + 70 + 80 + 90 0 Angular displacement q Please refer to the chapter " Precautions for Use." |
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