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| RO-P-DS-3070 0.5W X/Ku-Band Power Amplifier 8.0-12.0 GHz MAAPGM0034 Preliminary Information Features 8.0-12.0 GHz GaAs MMIC Amplifier 8.0-12.0 GHz Operation 0.5 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG (R) MESFET Process High Performance Ceramic Bolt Down Package APGM0034 YWWLLLL Primary Applications Point-to-Point Radio Weather Radar Airborne Radar Description The MAAPGM0034 is a packaged, 2-stage, 0.5 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction Self-Aligned Gate (MSAG (R)) MESFET Process. Pin Number 1 2 3 4 5 6 7 8 9 10 Description No Connection No Connection RF IN No Connection V GG No Connection No Connection RF OUT No Connection V DD Maximum Operating Conditions Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature 1 Absolute Maximum 21.0 +12.0 -3.0 150 1.5 180 -55 to +150 Units dBm V V mA W C C Symbol PIN VDD VGG IDQ PDISS TJ TSTG 1. Operation outside of these ranges may reduce product reliability. RO-P-DS-3070 2/6 0.5W X/Ku-Band Power Amplifier Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN TJ T JC TB 58.6 Min 4.0 -2.3 Typ 8.0 -2.0 16.0 MAAPGM0034 Max 10.0 -1.5 19.0 150 Unit V V dBm C C/W Note 2 C 2. Maximum MMIC Base Temperature = 150C -- T JC* VDD * IDQ Electrical Characteristics: TB = 40C3, Z0 = 50 , V DD = 10V, V GG = -1.8V, Pin = 16 dBm, R G = 604O Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD NF 2f 3f OTOI IM3 IM5 Typical 8.0-12.0 27.5 30 27 14.5 2.5:1 2.5:1 <2 < 200 8.5 -28 -35 33 -13 -36 mA mA dB dBc dBc dBm dBm dBm Units GHz dBm % dBm dB Output Third Order Intercept 3rd Order Intermodulation Distortion, Single Carrier Level = 17 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 17 dBm 3. T B = MMIC Base Temperature Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -1.8 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (approxmately @ -1.8V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3070 3/6 0.5W X/Ku-Band Power Amplifier MAAPGM0034 50 POUT PAE 50 40 40 POUT (dBm) 20 20 10 10 0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) 0 12.5 Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 10V and Pin = 16 dBm. 50 POUT PAE 40 50 40 POUT (dBm) 30 30 PAE(%) 20 20 10 10 0 4 5 6 7 Drain Voltage (V) 8 9 10 0 Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 10 GHz. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. PAE(%) 30 30 RO-P-DS-3070 4/6 0.5W X/Ku-Band Power Amplifier MAAPGM0034 40 35 30 P1dB (dBm) 25 20 15 10 5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage VDD = 4 VDD = 8 VDD = 6 VDD = 10 25 Gain Input VSWR Output VSWR Gain (dB) 15 6 20 5 4 VSWR 10 3 5 2 0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 10V. 1 12.5 Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3070 5/6 0.5W X/Ku-Band Power Amplifier MAAPGM0034 APGM0034 Figure 5. CR-15 Package Dimensions The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3070 6/6 0.5W X/Ku-Band Power Amplifier Figure 6. Recommended Bias Configuration MAAPGM0034 100 pF VDD 0.1 F APGM0034 YWWLLLL RFIN RFOUT 604 O V GG 100 pF 0.1 F Pin Number 1 2 3 4 5 6 7 8 9 10 Description No Connection No Connection RF IN No Connection V GG No Connection No Connection RF OUT No Connection V DD Assembly Instructions: This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. * Application Notes can be found by going to the Site Search Page on M/A-COM's web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. |
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