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| RO-P-DS-3075 Preliminary Information 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036 MAAPGM0036 Features 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG(R) Process Primary Applications 2.5-2.7 GHz MMDS GPS Radar Telemetry APGM0036 YWWLLLL Description The MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction Self-Aligned Gate (MSAG(R)) MESFET Process. M/A-COM's MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% IDSS) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Processing Temperature 1. Operation outside of these ranges may reduce product reliability. Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 23.0 +12.0 -3.0 730 6.6 180 -55 to +150 230 Units dBm V V mA W C C C RO-P-DS-3075 2/6 1.2-3.2 GHz 1.2W Power Amplifier Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance Package Base Temperature Symbol VDD VGG PIN TJ JC TB 14.2 Min 4.0 -2.4 Typ 8.0 -2.0 18 MAAPGM0036 Max 10.0 -1.5 21 150 Unit V V dBm C C/W Note 2 C 2. Maximum Package Base Temperature = 150C -- JC* VDD * IDQ Electrical Characteristics: TB = 40C, Z0 = 50 , VDD = 8V, IDQ 460 mA3, Pin = 18 dBm, RG 150 Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure 2nd Harmonic 3rd Harmonic Output Third Order Intercept 3 Order Intermodulation Distortion, Single Carrier Level = 21 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 21 dBm rd Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD NF 2f 3f OTOI IM3 IM5 Typical 1.2-3.2 31 29 31 20 1.7:1 2.0:1 <5 < 800 5 -15 -30 40 -11 -35 Units GHz dBm % dBm dB mA mA dB dBc dBc dBm dBm dBm 3. Adjust VGG between -2.4 to -1.5V to achieve indicated IDQ. Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG -1.8V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (See Note 3 above). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3075 3/6 1.2-3.2 GHz 1.2W Power Amplifier 50 MAAPGM0036 50 POUT 40 PAE 40 POUT (dBm) 20 20 10 10 0 1.0 1.5 2.0 2.5 3.0 3.5 0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 18 dBm. 50 POUT PAE 40 50 40 POUT (dBm) 20 20 10 10 0 4 5 6 7 8 9 10 0 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 2.25 GHz. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. PAE(%) 30 30 PAE(%) 30 30 RO-P-DS-3075 4/6 1.2-3.2 GHz 1.2W Power Amplifier 50 VDD = 4 VDD = 8 40 MAAPGM0036 VDD = 6 VDD = 10 P1dB (dBm) 30 20 10 0 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Figure 3. 1dB Compression Point vs. Frequency 30 6 25 Gain Input VSWR Output VSWR 5 Gain (dB) 20 4 15 3 10 2 5 1.0 1.5 2.0 2.5 3.0 3.5 1 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. VSWR RO-P-DS-3075 5/6 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036 APGM0036 Figure 5. CR-15 Package Dimensions The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3075 6/6 1.2-3.2 GHz 1.2W Power Amplifier Figure 6. Recommended Bias Configuration MAAPGM0036 RG (See Electrical Characteristics - Page 2) VGG 0.1 F 0.1 F VDD 100 pF 100 pF APGM0036 YWWLLLL RFIN RFOUT 100 pF 100 pF Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection Assembly Instructions: This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. * Application Notes can be found by going to the Site Search Page on M/A-COM's web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note. Biasing Notes: The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible (recommended < 100 mils). A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. |
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