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| SI6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) 0.190 @ VGS = -4.5 V 0.280 @ VGS = -3.0 V ID (A) "1.7 "1.3 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (V) Diode Forward Voltage 0.5 V @ 1 A IF (A) 1.5 S K TSSOP-8 D S S G 1 2 3 4 Top View D 8 K A A A D A G SI6821DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit -20 20 "12 "1.7 "1.3 "8 -1.0 1.5 30 1.2 0.76 1.0 0.64 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 105 125 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 115 130 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70791 S-56954--Rev. C, 01-Mar-99 www.vishay.com S FaxBack 408-970-5600 2-1 SI6821DQ Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55_C VDS w -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1.7 A VGS = -3.0 V, ID = -1.3 A VDS = -10 V, ID = -1.7 A IS = -1 A, VGS = 0 V -6 0.135 0.200 4.0 -0.77 -1.2 0.190 0.280 W S V -0.6 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1 A, di/dt = 100 A/ms VDD = -3.5 V, RL = 11.5 W 3 5 V, 11 5 ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -3.5 V, VGS = -4.5 V ID = -0.3 A 35V 4 5 V, 03 3.5 0.85 0.60 7 10 11 7 35 15 20 20 15 60 ns 7.0 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1 A IF = 1 A, TJ = 125_C Vr = 20 V Min Typ 0.45 0.36 0.003 0.1 2 62 Max 0.5 Unit V 0.42 0.100 1 10 pF mA A Maximum R Reverse Leakage Current Mi Lk C Irm Vr = 20 V, TJ = 75_C Vr = 20 V, TJ = 125_C Junction Capacitance CT Vr = 10 V www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70791 S-56954--Rev. C, 01-Mar-99 SI6821DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 4.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 4V 3.5 V 8 25_C 125_C 10 TC = -55_C Vishay Siliconix MOSFET Transfer Characteristics 6 3V 4 2.5 V 2 1.5 V 0 0 2 4 6 8 2V 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 600 Capacitance r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 500 Ciss 400 0.3 VGS = 3.0 V 0.2 VGS = 4.5 V 0.1 300 Coss 200 Crss 100 0 0 2 4 ID - Drain Current (A) 6 8 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 3.5 V ID = 0.3 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.7 A 4 r DS(on) - On-Resistance ( W) (Normalized) 1.5 2.0 2.5 3.0 3.5 4.0 1.6 3 1.2 2 0.8 1 0 0 0.5 1.0 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 70791 S-56954--Rev. C, 01-Mar-99 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-3 SI6821DQ Vishay Siliconix New Product MOSFET On-Resistance vs. Gate-to-Source Voltage 0.8 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.6 TJ = 150_C 0.4 ID = 1.7 A 0.2 TJ = 25_C 1 0.2 0.4 0.6 0.8 1.0 1.8 0 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.50 ID = 250 mA 0.25 V GS(th) Variance (V) 20 Power (W) 30 25 Single Pulse Power 0.00 15 10 -0.25 5 -0.5 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 115_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70791 S-56954--Rev. C, 01-Mar-99 SI6821DQ New Product Vishay Siliconix SCHOTTKY Forward Voltage Drop 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R - Reverse Current (mA) I F - Forward Current (A) 1 1 TJ = 150_C 0.1 20 V 10 V 0.01 0.1 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V) 250 Capacitance CT - Junction Capacitance (pF) 200 150 Ciss 100 50 0 0 4 8 12 16 20 VKA - Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: PDM 0.1 0.1 t1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) Document Number: 70791 S-56954--Rev. C, 01-Mar-99 www.vishay.com S FaxBack 408-970-5600 2-5 |
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