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(R)
2N5886
HIGH CURRENT SILICON NPN POWER TRANSISTOR
s
s
STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY
APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
s
1 2
TO-3
DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 25 50 7.5 200 -65 to 200 200 Unit V V V A A A W
o o
C C
January 2000
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2N5886
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.875
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CE = 80 V V CB = 80 V V CE = 40 V V EB = 5 V I C = 200 mA 80 T c = 150 o C Min. Typ. Max. 1 10 1 2 1 Unit mA mA mA mA mA V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain
I C = 15 A I C = 25 A I C = 25 A I C = 10 A IC = 3 A I C = 10 A I C = 25 A IC = 3 A IC = 1 A IE = 0
I B = 1.5 A I B = 6.25 A I B = 6.25 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CB = 10 V f = 1KHz f =1 MHz f = 1MHz 35 20 4 20 4
1 4 2.5 1.5 100
V V V V
hfe fT C CBO
Small Signal Current Gain Transition frequency Collector Base Capacitance RESISTIVE LOAD Rise Time Storage Time Fall Time
MHz 500 pF
tr ts tf
I C = 10 A VCC = 30 V I B1 = -IB2 = 1A
0.7 1 0.8
s s s
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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2N5886
TO-3 MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P G
A
D C
U
V
O
N
R
B
P003F
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E
2N5886
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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