View FDD6670S_266399.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDD6670S
September 2001
FDD6670S
30V N-Channel PowerTrench(R) SyncFET TM
General Description
The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.
Features
* 64 A, 30 V RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12.5 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (17nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability .
Applications
* DC/DC converter * Motor Drives
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
T A =25 oC unless otherwise noted
Parameter
Ratings
30 20
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
64 100 70 3.2 1.3 -55 to +150
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
1.8 40 96
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDD6670S
(c)2001 Fairchild Semiconductor Corporation
Device FDD6670S
Reel Size 13''
Tape width 16mm
Quantity 2500 units
FDD6670S Rev E(W)
FDD6670S
Electrical Characteristics
Symbol
W DSS IAR
T A = 25C unless otherwise noted
Parameter
(Note 2)
Test Conditions
Single Pulse, VDD = 15 V, ID=14A
Min
Typ
Max
245 14
Units
mJ A
Drain-Source Avalanche Ratings
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V
30 19 500 100 -100
V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25C VGS = 10 V, ID = 13.8 A VGS = 4.5 V, ID = 11.7 A VGS= 10 V, ID = 13.8A, TJ= 125C VGS = 10 V, VDS = 15 V, VDS = 5 V ID = 13.8 A
1
2 -3.3 6 9 10
3
V mV/C
9 12.5 15
m
ID(on) gFS
50 27
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
2010 526 186
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
10 10 34 14
18 18 55 23 24
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 10 V
ID = 13.8 A,
17 6.2 5.5
Drain-Source Diode Characteristics
VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/s
(Note 2) (Note 2)
0.49 0.56 20 19.7
0.7
V nS nC
(Note 3)
FDD6670S Rev E (W)
FDD6670S
Electrical Characteristics
T A = 25C unless otherwise noted
Notes: 1. RJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 40C/W when mounted on a 1in 2 pad of 2 oz copper
b) RJA = 96C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
PD R DS(ON)
3. Maximum current is calculated as:
where PD is maximum power dissipation at T C = 25C and RDS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A
FDD6670S Rev E (W)
FDD6670S
Typical Characteristics
50
2.6
VGS = 10V
40 I D, DRAIN CURRENT (A)
6.0V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.5V 4.0V 3.5V
2.2
VGS = 3.5V
30
1.8
4.0V
1.4
20
4.5V 6.0V
10
3.0V
1
10V
0 0 0.5 1 1.5 2 VD S, DRAIN-SOURCE VOLTAGE (V)
0.6 0 10 20 30 40 50 I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 RDS(ON) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.6 ID = 13.5A VGS = 10V 1.4
ID = 6.8A
0.02
1.2
0.015
1
TA = 125 C
o
0.8
0.01
TA = 25 C
o
0.6 -50 -25 0 25 50
o
75
100
0.005 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
70 60 I D, DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 I S, REVERSE DRAIN CURRENT (A)
VDS = 5V
T A = -55 C 125 C
o
o
25 C
o
VGS = 0V
1
o
50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125 C
o
25 C
0.1
-55 C
0.01
o
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6670S Rev E (W)
FDD6670S
Typical Characteristics
(continued)
10 VGS, GATE-SOURCE VOLTAGE (V) ID =13.5A 8 15V 6 VD S = 5V 10V CAPACITANCE (pF)
3600 3000 C ISS 2400 1800 1200 C OSS 600 CRSS 0 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20
f = 1MHz VGS = 0 V
4
2
0 Qg , GATE CHARGE (nC)
25
30
VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 1 0 0 s 1ms 10ms 100ms 1s 10s 50
Figure 8. Capacitance Characteristics.
R D S ( O N ) LIMIT
40
ID, DRAIN CURRENT (A)
10
SINGLE PULSE R JA = 96C/W T A = 25C
30
1
V GS = 10V SINGLE PULSE o R JA = 96 C/W T A = 25 oC
DC
20
0.1
10
0.01 0.01
0.1
1
10
100
0 0.001
0.01
0.1
1 t1 , TIME (sec)
10
100
1000
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
R JA (t) = r(t) * R JA R JA = 96 C/W P(pk) t1 t2 TJ - T A = P * R JA(t) Duty Cycle, D = t 1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t 1 , TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDD6670S Rev E (W)
FDD6670S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6670S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1 IDSS, REVERSE LEAKAGE CURRENT (A)
o
100 C
0.01
0.001
25 C
0.0001
o
Current: 0.8A/div
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
Time: 10.0ns/div
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
Figure 12. FDD6670S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6670A).
Current: 0.8A/div
Time: 10.0ns/div
Figure 13. Non-SyncFET (FDD6670A) body diode reverse recovery characteristic.
FDD6670S Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

▲Up To Search▲

Price & Availability of FDD6670S

	To Download FDD6670S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .