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MITSUBISHI SEMICONDUCTOR
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW)
IN1 1 IN2 2 IN3 3 INPUTS IN4 4 IN5 5 IN6 6 IN7 7 VS 8
16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 SUB OUTPUTS
FEATURES High breakdown voltage (BVCEO 40V) q High-current driving (Io(max) = -300mA) q With output clamping diodes q Active "L" input q Wide operating temperature range (Ta = -20 to +75C)
q
Outline 16P4
CIRCUIT SCHEMATIC APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
INPUT VS 27k 20k
FUNCTION The M54561P have seven circuits of current-sourcing outputs. Darlington transistor, which are made of PNP transistor and NPN transistor. Resistance of 20k is connected between PNP transistor base and input pin. PNP transistor emitters and NPN transistor collector is connected VS (pin 8), and spike killer clamping diode is provided between each output pins. Output currene is 300mA maximum and supply voltage VS is 40V maximum operate Active "L" input.
7k
3k OUTPUT SUB*
* SUB must be the lowest voltage in a circuit. The seven circuits share the VS and SUB. The diodes shown by broken line are parasite diodes and must not be used. Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = -20 ~ +75C)
Symbol VCEO VS VI IO IF VR Pd Topr Tstg Parameter Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Current per circuit output, H Output, L Conditions Ratings -0.5 ~ VS 40 -0.5 ~ VS -300 -300 40 1.47 -20 ~ +75 -55 ~ +125 Unit V V V mA mA V W C C
Aug. 1999
Ta = 25C, when mounted on board
MITSUBISHI SEMICONDUCTOR
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol VS Supply voltage Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
min 0 0 0 VS-0.2 0
Limits typ -- -- -- -- --
max 40 -300
Unit V
IO
Percent duty cycle less Output current than 10% per channel Percent duty cycle less than 50% "H" input voltage "L" input voltage
mA -100 VS+0.3 VS-3 V V
VIH VIL
ELECTRICAL CHARACTERISTICS
Symbol IS (leak) VCE (sat) II VF IR hFE Parameter Supply leak current
(Unless otherwise noted, Ta = -20 ~ +75C)
Test conditions VS = 40V VI = VS-3V, IO = -300mA VI = VS-3V, IO = -100mA VI = VS-3.5V, IF = -300mA VR = 40V VCE = 4V, IO = -300mA, Ta =25C
min -- -- -- -- -- -- 1000
Limits typ+ -- 1.65 1.45 -150 -1.6 -- 8000
max 100 2.4 2.0 -250 -2.4 100 --
Unit A V A V A --
Collector-emitter saturation voltage Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 200 2500 max -- -- Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT VS
TIMING DIAGRAM
INPUT
Measured device OPEN PG 50 RL CL
OUTPUT
50%
50%
OUTPUT
50%
50%
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VIN = 7 to 10.3V (2) Input-output conditions : RL = 40, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Output Current Characteristics -400
VS = 10V VI = 7V
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
Output current IO (mA)
-300
Ta = 75C Ta = 25C Ta = -20C
1.0
-200
0.5
-100
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (C)
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Output Current Characteristics -400
Duty-Cycle-Output Current Characteristics -400
Output current IO (mA)
-300
1, 2
Output current IO (mA)
-300
1
-200
*The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
3 4 5 6 7
-200
2 3 4 5 6 7
-100
-100
*The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%) DC Amplification Factor output Current Characteristics 104
7 5
Duty cycle (%) Grounded Emitter Transfer Characteristics -400
DC amplification factor hFE
Output current IO (mA)
3
-300
VS = 20V VCE = 4V
Ta = 75C Ta = 25C Ta = -20C
103
7 5 VCE = 4V 3
Ta = 75C Ta = 25C Ta = -20C
-200
-100
102 1 -10
-3 -5 -7-102
-3 -5 -7-103
0
0
0.5
1.0
1.5
2.0
Output current IO (mA)
VS-Input Voltage VS-VI (V)
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics -2.0
VS = 20V
Clamping Diode Characteristics 400
Forward bias current IF (mA)
Input corrent II (mA)
-1.5
Ta = 75C Ta = 25C Ta = -20C
300
Ta = 75C Ta = 25C Ta = -20C
-1.0
200
-0.5
100
0
0
5
10
15
20
0
0
0.5
1.0
1.5
2.0
VS-Input voltage VS-VI (V)
Forward bias voltage VF (V)
Aug. 1999

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