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| MITSUBISHI SEMICONDUCTOR M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW) IN1 1 IN2 2 IN3 3 INPUTS IN4 4 IN5 5 IN6 6 IN7 7 VS 8 16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 SUB OUTPUTS FEATURES High breakdown voltage (BVCEO 40V) q High-current driving (Io(max) = -300mA) q With output clamping diodes q Active "L" input q Wide operating temperature range (Ta = -20 to +75C) q Outline 16P4 CIRCUIT SCHEMATIC APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors INPUT VS 27k 20k FUNCTION The M54561P have seven circuits of current-sourcing outputs. Darlington transistor, which are made of PNP transistor and NPN transistor. Resistance of 20k is connected between PNP transistor base and input pin. PNP transistor emitters and NPN transistor collector is connected VS (pin 8), and spike killer clamping diode is provided between each output pins. Output currene is 300mA maximum and supply voltage VS is 40V maximum operate Active "L" input. 7k 3k OUTPUT SUB* * SUB must be the lowest voltage in a circuit. The seven circuits share the VS and SUB. The diodes shown by broken line are parasite diodes and must not be used. Unit : ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = -20 ~ +75C) Symbol VCEO VS VI IO IF VR Pd Topr Tstg Parameter Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Current per circuit output, H Output, L Conditions Ratings -0.5 ~ VS 40 -0.5 ~ VS -300 -300 40 1.47 -20 ~ +75 -55 ~ +125 Unit V V V mA mA V W C C Aug. 1999 Ta = 25C, when mounted on board MITSUBISHI SEMICONDUCTOR M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VS Supply voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 0 0 0 VS-0.2 0 Limits typ -- -- -- -- -- max 40 -300 Unit V IO Percent duty cycle less Output current than 10% per channel Percent duty cycle less than 50% "H" input voltage "L" input voltage mA -100 VS+0.3 VS-3 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol IS (leak) VCE (sat) II VF IR hFE Parameter Supply leak current (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions VS = 40V VI = VS-3V, IO = -300mA VI = VS-3V, IO = -100mA VI = VS-3.5V, IF = -300mA VR = 40V VCE = 4V, IO = -300mA, Ta =25C min -- -- -- -- -- -- 1000 Limits typ+ -- 1.65 1.45 -150 -1.6 -- 8000 max 100 2.4 2.0 -250 -2.4 100 -- Unit A V A V A -- Collector-emitter saturation voltage Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 200 2500 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VS TIMING DIAGRAM INPUT Measured device OPEN PG 50 RL CL OUTPUT 50% 50% OUTPUT 50% 50% ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VIN = 7 to 10.3V (2) Input-output conditions : RL = 40, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics -400 VS = 10V VI = 7V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 Output current IO (mA) -300 Ta = 75C Ta = 25C Ta = -20C 1.0 -200 0.5 -100 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Output saturation voltage VCE (sat) (V) Duty-Cycle-Output Current Characteristics -400 Duty-Cycle-Output Current Characteristics -400 Output current IO (mA) -300 1, 2 Output current IO (mA) -300 1 -200 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 3 4 5 6 7 -200 2 3 4 5 6 7 -100 -100 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) DC Amplification Factor output Current Characteristics 104 7 5 Duty cycle (%) Grounded Emitter Transfer Characteristics -400 DC amplification factor hFE Output current IO (mA) 3 -300 VS = 20V VCE = 4V Ta = 75C Ta = 25C Ta = -20C 103 7 5 VCE = 4V 3 Ta = 75C Ta = 25C Ta = -20C -200 -100 102 1 -10 -3 -5 -7-102 -3 -5 -7-103 0 0 0.5 1.0 1.5 2.0 Output current IO (mA) VS-Input Voltage VS-VI (V) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics -2.0 VS = 20V Clamping Diode Characteristics 400 Forward bias current IF (mA) Input corrent II (mA) -1.5 Ta = 75C Ta = 25C Ta = -20C 300 Ta = 75C Ta = 25C Ta = -20C -1.0 200 -0.5 100 0 0 5 10 15 20 0 0 0.5 1.0 1.5 2.0 VS-Input voltage VS-VI (V) Forward bias voltage VF (V) Aug. 1999 |
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