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| RHRD440, RHRD460, RHRD440S, RHRD460S Data Sheet January 2000 File Number 3613.5 4A, 400V - 600V Hyperfast Diodes The RHRD440, RHRD460, RHRD440S and RHRD460S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. Formerly developmental type TA49055. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <30ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRD440 RHRD460 RHRD440S RHRD460S PACKAGE TO-251 TO-251 TO-252 TO-252 BRAND RHR440 RHR460 RHR440 RHR460 Packaging JEDEC STYLE TO-251 ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RHRD460S9A. Symbol K JEDEC STYLE TO-252 CATHODE (FLANGE) CATHODE A ANODE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRD440, RHRD440S RHRD460, RHRD460S 600 600 600 4 8 40 50 10 -65 to 175 300 260 UNITS V V V A A A W mJ oC oC oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 157oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 400 400 400 4 8 40 50 10 -65 to 175 300 260 1 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 RHRD440, RHRD460, RHRD440S, RHRD460S Electrical Specifications TC = 25oC, Unless Otherwise Specified RHRD440, RHRD440S SYMBOL VF IF = 4A IF = 4A, TC = 150oC IR VR = 400V VR = 600V VR = 400V, TC = 150oC VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 200A/s IF = 4A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 4A, dIF/dt = 200A/s IF = 4A, dIF/dt = 200A/s IF = 4A, dIF/dt = 200A/s VR = 10V, IF = 0A TEST CONDITION MIN TYP 16 7 45 15 MAX 2.1 1.7 100 500 30 35 3 RHRD460, RHRD460S MIN TYP 16 7 45 15 MAX 2.1 1.7 100 500 30 35 3 UNITS V V A A A A ns ns ns ns nC pF oC/W Typical Performance Curves 20 500 IR , REVERSE CURRENT (A) 100 175oC IF, FORWARD CURRENT (A) 10 175oC 100oC 100oC 25oC 1 0.1 25oC 0.01 0.5 0 0.5 1 1.5 2 2.5 3 VF , FORWARD VOLTAGE (V) 0.001 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 RHRD440, RHRD460, RHRD440S, RHRD460S Typical Performance Curves 30 25 t, RECOVERY TIMES (ns) 20 15 10 tb 5 0 0.5 0 0.5 trr (Continued) 50 TC = 100oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) 40 trr 30 TC = 25oC, dIF/dt = 200A/s ta 20 ta tb 10 1 IF, FORWARD CURRENT (A) 4 1 IF, FORWARD CURRENT (A) 4 FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 60 50 t, RECOVERY TIMES (ns) 40 30 TC = 175oC, dIF/dt = 200A/s trr IF(AV) , AVERAGE FORWARD CURRENT (A) 5 4 DC 3 SQ. WAVE 2 ta 20 10 0 0.5 tb 1 1 IF, FORWARD CURRENT (A) 4 0 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 50 CJ , JUNCTION CAPACITANCE (pF) 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3 RHRD440, RHRD460, RHRD440S, RHRD460S Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 8. trr TEST CIRCUIT IMAX = 1A L = 20mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 9. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 4 |
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