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| Semiconductor SDB310Q Schottky Barrier Diode Features * Low power rectified * Silicon epitaxial type * High reliability Ordering Information Type No. SDB310Q Marking S2 Package Code SOD-523 Outline Dimensions 0.2 Min. 1.60.1 1.20.1 unit : mm 0.80.1 2 1 2 1 0.60.1 0~0.1 PIN Connections 1. Anode 2. Cathode KSD-E002-001 1 SDB310Q Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Ta=25C Symbol VR IFRM IF IFSM PD Tj Tstg * Ratings 30 0.5 0.2 2 150 150 -55 ~ 150 Unit V A A A mW C C * : = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit ratingx1.5 Electrical Characteristics Characteristic Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time Ta=25 C Symbol VF(1) VF(2) IR CT trr IF =10mA IF =30mA VR =30V Test Condition Min. - Typ. - Max. 0.4 0.5 1 10 5 Unit V V A pF ns VR =1V, f=1MHz IF = IR =10mA, IRR = 1mA, RL=100 KSD-E002-001 2 SDB310Q Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-E002-001 3 |
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