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SKP04N60 SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) (TO-263AB)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP04N60 SKB04N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg -55...+150 C
1)
VCE 600V
IC 4A
VCE(sat) 2.3V
Tj 150C
Package TO-220AB TO-263AB
Ordering Code Q67040-S4216 Q67040-S4229
Symbol VCE IC
Value 600 9.4 4.9
Unit V A
ICpul s IF
19 19
10 4 IFpul s VGE tSC Ptot 19 20 10 50 V s W
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SKP04N60 SKB04N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol
Conditions
Max. Value
Unit
RthJC RthJCD RthJA RthJA TO-220AB TO-263AB
2.5 4.5 62 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 4 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 4 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 20 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 1.2 3 Typ. 2.0 2.3 1.4 1.25 4 3.1 264 29 17 24 7 40 max. 2.4 2.8 1.8 1.65 5
Unit
V
A 20 500 100 317 35 20 31 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 4 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =4 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02
1)
2
SKP04N60 SKB04N60
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 2 00 V , I F = 4 A, d i F / d t =2 0 0 A/ s 180 15 165 130 2.5 180 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 4 A, V G E = 0/ 15 V , R G =67 , 1) L = 18 0 nH , 1) C = 18 0 pF Energy losses include "tail" and diode reverse recovery. 22 15 237 70 0.070 0.061 0.131 26 18 284 84 0.081 0.079 0.160 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 2 00 V , I F = 4 A, d i F / d t =2 0 0 A/ s 230 23 227 300 4 200 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 4 A, V G E = 0/ 15 V , R G = 67 , 1) L = 18 0 nH , 1) C = 18 0 pF Energy losses include "tail" and diode reverse recovery. 22 16 264 104 0.115 0.111 0.226 26 19 317 125 0.132 0.144 0.277 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Jul-02
SKP04N60 SKB04N60
Ic
10A t p =2 s
20A
15 s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
1A
50 s 200 s 1ms
T C =80C 10A T C =110C
0.1A
DC
Ic
0A 10Hz
0.01A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 67)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
60W
12A
50W
10A
40W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
8A
30W
6A
20W
4A
10W
2A
0W 25C
50C
75C
100C
125C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
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SKP04N60 SKB04N60
15A
15A
12A
12A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
VGE=20V 9A 15V 13V 11V 9V 7V 5V
VGE=20V 9A 15V 13V 11V 9V 7V 5V
6A
6A
3A
3A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
12A 10A 8A 6A 4A 2A 0A 0V
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
14A
4.0V
3.5V
IC = 8A
IC, COLLECTOR CURRENT
3.0V
2.5V
IC = 4A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
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Jul-02
SKP04N60 SKB04N60
td(off) t d(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns
tf
t d(on)
t d(on)
tr 10ns 0A 2A 4A 6A 8A 10A 10ns 0 50 100 150
tr 200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 67, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 4A, Dynamic test circuit in Figure E)
5.5V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50C 0C 50C 100C 150C typ. max.
t, SWITCHING TIMES
100ns
tf
td(on)
tr 10ns 0C 50C 100C 150C
min.
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 4A, RG = 67, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.2mA)
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Jul-02
SKP04N60 SKB04N60
0.6mJ
*) Eon and Ets include losses due to diode recovery.
0.4mJ
*) Eon and Ets include losses due to diode recovery.
0.5mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.3mJ
0.4mJ
E ts *
E ts * 0.2mJ
0.3mJ E on * 0.2mJ E off 0.1mJ
E off 0.1mJ E on *
0.0mJ 0A
2A
4A
6A
8A
10A
0.0mJ 0
50
100
150
200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 67, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 4A, Dynamic test circuit in Figure E)
0.3mJ
*) Eon and Ets include losses due to diode recovery. D=0.5
0
ZthJC, TRANSIENT THERMAL IMPEDANCE
10 K/W 0.2 0.1 0.05 10 K/W 0.02 0.01
R,(K/W) 0.815 0.698 0.941 0.046
R1
-1
E, SWITCHING ENERGY LOSSES
0.2mJ E ts *
0.1mJ
E on *
10 K/W
-2
, (s) 0.0407 5.24*10-3 4.97*10-4 4.31*10-5
R2
E off 0.0mJ 0C
single pulse
50C
100C
150C
10 K/W 1s
-3
C 1 = 1 / R 1 C 2 = 2 /R 2
10s 100s
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 4A, RG = 67, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Jul-02
SKP04N60 SKB04N60
25V C iss 20V
VGE, GATE-EMITTER VOLTAGE
15V
120V
480V
C, CAPACITANCE
100pF
10V
C oss
5V 10pF 0V 0nC
C rss
10nC
20nC
30nC
0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 4A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
70A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
60A 50A 40A 30A 20A 10A 0A 10V
tsc, SHORT CIRCUIT WITHSTAND TIME
20 s
15 s
10 s
5 s
0 s 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
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Jul-02
SKP04N60 SKB04N60
500ns
560nC
480nC
Qrr, REVERSE RECOVERY CHARGE
400ns
trr, REVERSE RECOVERY TIME
400nC
IF = 8A
300ns
IF = 8A
320nC
IF = 4A
240nC
200ns
IF = 4A IF = 2A
160nC
IF = 2A
100ns
80nC
0ns 40A/s
120A/s
200A/s
280A/s
360A/s
0nC 40A/s
120A/s
200A/s
280A/s
360A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
8A
400A/s
d i r r /d t, DIODE PEAK RATE OF FALL
360A/s
6A
IF = 8A
4A
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
320A/s
240A/s
IF = 4A
IF = 2A
160A/s
2A
80A/s
0A 40A/s
120A/s
200A/s
280A/s
0A/s 40A/s
120A/s
200A/s
280A/s
360A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
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Jul-02
SKP04N60 SKB04N60
8A
2.0V
I F = 8A
6A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
4A 150C 100C 2A 25C -55C
1.5V
I F = 4A
0A 0.0V
0.5V
1.0V
1.5V
2.0V
1.0V
-40C
0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5
10 K/W
0
0.2 0.1 0.05 0.02
10 K/W 0.01 single pulse
-1
R,(K/W) 0.128 0.387 0.346 1.360 2.280
R1
, (s)= 0.085 7.30*10-3 4.69*10-3 7.34*10-4 5.96*10-5
R2
10 K/W 1s
-2
C 1 = 1 / R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
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Jul-02
SKP04N60 SKB04N60
TO-220AB
symbol dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 min
[inch] max 0.4016 0.0512 0.0630 0.0421
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03
0.3858 0.0276 0.0394 0.0406
2.54 typ. 0.65 0.85
0.1 typ. 0.0256 0.0335
5.08 typ. 4.30 1.17 9.05 2.30 4.50 1.37 9.45 2.50
0.2 typ. 0.1693 0.0461 0.3563 0.0906 0.1772 0.0539 0.3720 0.0984
15 typ. 0.00 4.20 0.20 5.20
0.5906 typ. 0.0000 0.1654 0.0079 0.2047
8 max 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 3.00 0.60
8 max 0.0945 0.0157 0.1181 0.0236
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
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SKP04N60 SKB04N60
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =180pF.
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SKP04N60 SKB04N60
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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Jul-02

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