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TC4467 TC4468 TC4469 LOGIC-INPUT CMOS QUAD DRIVERS
FEATURES
s s s s s s s High Peak Output Current ............................... 1.2A Wide Operating Range ............................ 4.5 to 18V Symmetrical Rise and Fall Times ................ 25nsec Short, Equal Delay Times ............................ 75nsec Latchproof! Withstands 500mA Inductive Kickback 3 Input Logic Choices -- AND / NAND / AND + Inv 2kV ESD Protection on All Pins
1
2 3 4 5 6 7
GENERAL DESCRIPTION
The TC446X family of four-output CMOS buffer/drivers are an expansion from our earlier single- and dual-output drivers. Each driver has been equipped with a two-input logic gate for added flexibility. The TC446X drivers can source up to 250 mA into loads referenced to ground. Heavily loaded clock lines, coaxial cables, and piezoelectric transducers can all be easily driven with the 446X series drivers. The only limitation on loading is that total power dissipation in the IC must be kept within the power dissipation limits of the package. The TC446X series will not latch under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (either polarity) occurs on the ground line. They can accept up to half an amp of inductive kickback current (either polarity) into their outputs without damage or logic upset. In addition, all terminals are protected against ESD to at least 2000V.
APPLICATIONS
s s s s s s General-Purpose CMOS Logic Buffer Driving All Four MOSFETs in an H-Bridge Direct Small Motor Driver Relay or Peripheral Drivers CCD Driver Pin-Switching Network Driver
ORDERING INFORMATION
Part No.
TC446xCOE TC446xCPD TC446xEJD TC446xMJD
Package
16-Pin SOIC (Wide) 14-Pin Plastic DIP 14-Pin CerDIP 14-Pin CerDIP
Temp. Range
0 to +70C 0 to +70C - 40 to +85C - 55 to +125C
LOGIC DIAGRAMS
x indicates a digit must be added in this position to define the device input configuration: TC446x -- 7 NAND 8 AND 9 AND with INV
TC4467
1A 1B 2A 2B 3A 3B 4A 4B 1 2 3 4 5 6 8 9
VDD 14 13 1Y
TC4468
1A 1B 2A 2B 3A 3B 4A 4B 1 2 3 4 5 6 8 9
VDD 14 13 1Y
TC4469
1A 1B 2A 2B 3A 3B 4A 4B 1 2 3 4 5 6 8 9
VDD 14 13 1Y
TC446X
VDD
12
2Y
12
2Y
12
2Y
OUTPUT
11
3Y
11
3Y
11
3Y
10
4Y
10
4Y
10
4Y
7 GND
7 GND
7 GND
TC4467/8/9-6 10/21/96
8
4-261
TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V Input Voltage ......................... (GND - 5V) to (VDD + 0.3V) Maximum Chip Temperature Operating ........................................................ +150C Storage ............................................. - 65 to +150C Maximum Lead Temperature (Soldering, 10 sec) ......................................... +300C Operating Ambient Temperature Range C Device .................................................. 0 to +70C E Device ............................................. - 40 to +85C M Device ........................................... - 55 to +125C Package Power Dissipation (TA 70C) 14-Pin CerDIP ................................................840mW 14-Pin Plastic DIP ...........................................800mW 16-Pin Wide SOIC ..........................................760mW Package Thermal Resistance 14-Pin CerDIP RJ-A ...................................... 100C/W RJ-C ......................................... 23C/W 14-Pin Plastic DIP RJ-A ......................................... 80C/W RJ-C ......................................... 35C/W 16-Pin Wide SOIC RJ-A ......................................... 95C/W RJ-C ......................................... 28C/W
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: Measured at TA = +25C with 4.5V VDD 18V, unless otherwise specified.
Symbol Input
VIH VIL IIN Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Continuous Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current Power Supply Voltage Note 3 Note 3 0V VIN VDD ILOAD = 100A (Note 1) ILOAD = 10mA (Note 1) IOUT = 10mA, VDD = 18V Single Output Total Package 4.5V VDD 16V 2.4 0 -1 VDD - 0.025 -- -- -- -- 500 -- -- -- -- -- 10 1.2 -- -- VDD 0.8 1 -- 0.15 15 -- 300 500 -- V V A V V A mA mA
Parameter
Test Conditions
Min
Typ
Max
Unit
Output
VOH VOL RO IPK IDC I
Switching Time
tR tF tD1 tD2 IS VDD Figure 1 Figure 1 Figure 1 Figure 1 -- -- -- -- -- 4.5 15 15 40 40 1.5 -- 25 25 75 75 4 18 nsec nsec nsec nsec mA V
Power Supply
Note 2
TRUTH TABLE
Part No.
INPUTS A INPUTS B OUTPUTS TC446X
H = High 4-262 L = Low
TC4467 NAND
H H L H L H L H H L L H H H H
TC4468 AND
H L L L H L L L L
TC4469 AND/INV
H H L H L H L H L L L L
TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
ELECTRICAL CHARACTERISTICS: Measured throughout operating temperature range with 4.5V VDD 18V,
unless otherwise specified. Symbol Input
VIH VIL IIN Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current Power Supply Voltage (Note 3) (Note 3) 0V VIN VDD ILOAD = 100 A (Note 1) ILOAD = 10 mA (Note 1) IOUT = 10 mA, VDD = 18V 4.5V VDD 16V 2.4 -- - 10 VDD - 0.025 -- -- -- 500 -- -- -- -- -- 20 1.2 -- -- 0.8 10 -- 0.30 30 -- -- V V A V V A mA
1
Parameter
Test Conditions
Min
Typ
Max
Unit
2 3 4 5 6 7
Output
VOH VOL RO IPK I
Switching Time
tR tF tD1 tD2 IS IS Figure 1 Figure 1 Figure 1 Figure 1 -- -- -- -- -- 4.5 -- -- -- -- -- -- 50 50 100 100 8 18 nsec nsec nsec nsec mA V
Power Supply
Note 2
NOTES: 1. Totem-pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. 2. When driving all four outputs simultaneously in the same direction, VDD shall be limited to 16V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3. The input threshold has about 50 mV of hysteresis centered at approximately 1.5V. Slow moving inputs will force the device to dissipate high peak currents as the input transitions through this band. Input rise times should be kept below 5 s to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum or below the minimum input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
PIN CONFIGURATIONS
16-Pin SOIC (Wide)
1A 1B 2A 2B 3A 3B GND GND 1 2 3 4 5 6 7 8 16 15 14 13 VDD VDD 1Y 2Y 3Y 4Y 4B 4A
14-Pin Plastic DIP/CerDIP
1A 1 1B 2 2A 3 2B 4 3A 5 3B 6 GND 7
14 VDD 13 1Y 12 2Y
TC4467/8/9
12 11 10 9
TC4467/8/9
11 3Y 10 4Y 9 8 4B 4A
8
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TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
Supply Bypassing
Large currents are required to charge and discharge large capacitive loads quickly. For example, charging a 1000 pF load to 18V in 25nsec requires 0.72A from the device's power supply. To guarantee low supply impedance over a wide frequency range, a 1 F film capacitor in parallel with one or two low-inductance 0.1 F ceramic disk capacitors with short lead lengths (<0.5 in.) normally provide adequate bypassing. Three components make up total package power dissipation: (1) Load-caused dissipation (PL) (2) Quiescent power (PQ) (3) Transition power (PT). A capacitive-load-caused dissipation (driving MOSFET gates), is a direct function of frequency, capacitive load, and supply voltage. The power dissipation is: PL = f C VS2, where: f = Switching frequency C = Capacitive load VS = Supply voltage. A resistive-load-caused dissipation for ground-referenced loads is a function of duty cycle, load current, and load voltage. The power dissipation is: PL = D (VS - VL) IL, where: D = Duty cycle VS = Supply voltage VL = Load voltage IL = Load current. A resistive-load-caused dissipation for supply-referenced loads is a function of duty cycle, load current, and output voltage. The power dissipation is: PL = D VO IL, where: f = Switching frequency VO = Device output voltage IL = Load current. Quiescent power dissipation depends on input signal duty cycle. Logic HIGH outputs result in a lower power dissipation mode, with only 0.6 mA total current drain (all devices driven). Logic LOW outputs raise the current to 4 mA maximum. The quiescent power dissipation is: PQ = VS (D (IH) + (1-D)IL), where: IH = Quiescent current with all outputs LOW (4 mA max) IL = Quiescent current with all outputs HIGH (0.6 mA max) D = Duty cycle VS =Supply voltage. TELCOM SEMICONDUCTOR, INC.
Grounding
The TC4467 and TC4469 contain inverting drivers. Potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. Instead, individual ground returns for input and output circuits, or a ground plane, should be used.
Input Stage
The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5 mA current source load. With logic "0" outputs, maximum quiescent supply current is 4 mA. Logic "1" output level signals reduce quiescent current to 1.4 mA maximum. Unused driver inputs must be connected to VDD or VSS. Minimum power dissipation occurs for logic "1" outputs. The drivers are designed with 50 mV of hysteresis. This provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5V, making any voltage greater than 1.5V up to VDD a logic 1 input . Input current is less than 1 A over this range.
Power Dissipation
The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. TelCom Semiconductor's CMOS drivers have greatly reduced quiescent DC power consumption. Input signal duty cycle, power supply voltage and load type, influence package power dissipation. Given power dissipation and package thermal resistance, the maximum ambient operating temperature is easily calculated. The 14pin plastic package junction-to-ambient thermal resistance is 83.3C/W. At +70C, the package is rated at 800mW maximum dissipation. Maximum allowable chip temperature is +150C.
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LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
Transition power dissipation arises in the complementary configuration (TC446X) because the output stage N-channel and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition power dissipation is approximately: PT = f VS (10 10-9). Maximum operating temperature: TJ - JA (PD) = 141C, where: TJ = Maximum allowable junction temperature (+150C) JA = Junction-to-ambient thermal resistance (83.3C/W) 14-pin plastic package.
NOTE: Ambient operating temperature should not exceed +85C for "EJD" device or +125C for "MJD" device.
1
2 3 4
Package power dissipation is the sum of load, quiescent and transition power dissipations. An example shows the relative magnitude for each term: C = 1000 pF capacitive load VS = 15V D = 50% f = 200 kHz PD = Package Power Dissipation = PL + PQ + PT = 45 mW + 35 mW + 30 mW = 110 mW.
VDD 1 F FILM
14 1 2 3 4 5 6 8 9 7 0.1 F CERAMIC +5V 13 90%
1A 1B 2A 2B 3A 3B 4A 4B
VOUT 470 pF
INPUT (A, B) 0V
VDD
5
90% tF
12
10% 90% tR 10%
tD2
11 OUTPUT 10 0V
tD1
10%
Input: 100 kHz, square wave, tRISE = tFALL 10nsec
Figure 1. Switching Time Test Circuit
6 7
8
TELCOM SEMICONDUCTOR, INC.
4-265
LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
140
2200 pF
Fall Time vs. Supply Voltage
140 120 2200 pF
120
t (FALL) (nsec)
t (RISE) (nsec)
100 80 60 40 20 0 3
1600 pF 1000 pF
100 80 60 40 20
1500 pF
1000 pF 470 pF 100 pF
470 pF 100 pF
5
7
9
13 VSUPPLY (V)
11
15
17
19
0
3
5
7
9
11 13 VSUPPLY (V)
15
17
19
Rise Time vs. Capacitive Load
140 120
5V
Fall Time vs. Capacitive Load
140 120
5V
t (RISE) (nsec)
100 80 60 40 20 0 100 1000 C LOAD (pF)
10,000
t (FALL) (nsec)
100 80 60 40 20 0 100 1000 C LOAD (pF)
10,000
10V 15V
10V 15V
Rise/Fall Times vs. Temperature
25 80 VSUPPLY = 17.5V CLOAD = 470 pF t (FALL) t (RISE)
Propagation Delay Time vs. Supply Voltage
C LOAD = 470 pF
DELAY TIME (nsec)
20
60
TIME (nsec)
tD1
15 10 5 0 -50
40 tD2 20
0 -25 0 25 50 TEMPERATURE (C) 75 100 125
4
6
8
10 12 V SUPPLY (V)
14
16
18
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TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
TYPICAL CHARACTERISTICS (Cont.)
Input Amplitude vs. Delay Times
140 120
VDD = 12V
1
Propagation Delay Times vs. Temperature
70 VDD = 17.5V CLOAD = 470 pF VIN = 0, 5V
2 3
DELAY TIME (nsec)
INPUT RISING 100 80 60 40 20 0 1 2 3 4 5 6 V DRIVE (V) 7 8 9
10
DELAY TIME (nsec)
60 50 40 30 20 -60
t D1
t D2
tD2
INPUT FALLING
t D1
-40
-20
0 20 40 60 TEMPERATURE (C)
80
100
120
Quiescent Supply Current vs. Supply Voltage
2.5 3.5 3.0
Quiescent Supply Current vs. Temperature
VDD = 17.5V
4 5
I QUIESCENT (mA)
2.0
I QUIESCENT (mA)
2.5 2.0 1.5 1.0 0.5 OUTPUTS HIGH OUTPUTS LOW
1.5 1.0 0.5 0 4 6 8
OUTPUTS = 0
OUTPUTS = 1
10 12 VSUPPLY (V)
14
16
18
0 -60
-40
-20
0
20 40 60 TJUNCTION (C)
80
100
120
6 7
16 18
High-State Output Resistance
35 30 35 30 TJ = +150C 25
Low-State Output Resistance
R DS(ON) ( )
25 20 15 10 5 0 4 6 8
R DS(ON) ( )
20 T = +150C J 15 10 5 T = +25C J
TJ = +25C
10 12 V SUPPLY (V)
14
16
18
0
4
6
8
10 12 V SUPPLY (V)
14
8
TELCOM SEMICONDUCTOR, INC.
4-267
LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Capacitive Load
60 50 I SUPPLY (mA) 40 30
500 kHz
Supply Current vs. Frequency
60
VDD = 18V
VDD = 18V
2 MHz 1 MHz
2200 pF 1000 pF
50 I SUPPLY (mA) 40 30 20
100 pF
20 10 0 100
200 kHz 20 kHz
10 0 10
1000 CLOAD (pF)
10,000
100 1000 FREQUENCY (kHz)
10,000
Supply Current vs. Capacitive Load
60 50 I SUPPLY (mA) 40 30 20 10 0 100 1 MHz I SUPPLY (mA)
VDD = 12V
Supply Current vs. Frequency
60
VDD = 12V
2 MHz 50 40 30 20 10 10,000 0 10
2200 pF
1000 pF
500 kHz 200 kHz 20 kHz 1000 C LOAD (pF)
100 pF
100 FREQUENCY (kHz)
1000
10,000
Supply Current vs. Capacitive Load
60
VDD = 6V
Supply Current vs. Frequency
60
VDD = 6V
50 I SUPPLY (mA) 40 30 20 10 0 100
1 MHz 500 kHz 200 kHz 20 kHz 2 MHz
50 I SUPPLY (mA) 40 30 20 10
100 pF 2200 pF
1000 pF
1000 CLOAD (pF)
10,000
0
10
100 1000 FREQUENCY (kHz)
10,000
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TELCOM SEMICONDUCTOR, INC.
LOGIC-INPUT CMOS QUAD DRIVERS TC4467 TC4468 TC4469
TYPICAL APPLICATIONS
Stepper Motor Drive
+12V 14 TC4469 1 2 AIRPAX #M82102-P2 13 RED 7.5/STEP DIRECTION MOTOR A 3 4 5 6 12 GRAY FWD REV 18V 1 2 3 4 5 6 8 9 7
1
Quad Driver for H-Bridge Motor Control
+5V TO +15V 14 TC4469 13
2 3
M MOTOR
12
PWM SPEED
11
B
11
YEL
10
8 9 7
10
BLK
4 5 6
48-Volt, 3-Phase Brushless Output Stage
48V
C1 1 F D1 1N4744 15V R1 3.3 k 5W
R4 3.3 k
R2 3.3 k
R3 3.3 k
1 2 3 4 5
14 VDD 1A 1B 2A 2B 3A 1Y U1 2Y 3Y 4Y TC4469 GND 7 15V 14 VDD 1Y 2Y 3Y 4Y TC4469 GND 7 13 12 11 10 13 12 11 10
D2 R5 R9 A+ 4.7 k R10 B+ 4.7 k R11 C+ 4.7 k A- 2N5550 2N5550 Q1 R6
6 3B 8 4A 9 4B D3 D4
(FLOAT AT 33V)
MOTOR PHASE A
MOTOR PHASE B
MOTOR PHASE C
Q2
R7
Q3 2N5550
1 2 3 4 5
1A 1B 2A 2B 3A
U2
7
6 3B 8 4A 9 4B
B-
C-
8
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TELCOM SEMICONDUCTOR, INC.

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