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Transistor
2SC4656
Silicon NPN epitaxial planer type
For high-frequency amplification Complementary to 2SA1791
0.2+0.1 -0.05
Unit: mm
0.15+0.1 -0.05
1 (0.5) (0.5) 1.00.1 1.60.1 5
2
(0.4)
(0.3)
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
0 to 0.1 0.450.1
Ratings 50 50 5 50 125 125 -55 ~ +125
Unit V V V mA mW C C
1:Base 2:Emitter 3:Collector
EIAJ:SC-75 SSMini3-G1 Package
Marking symbol : AM
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 50 5 200 0.06 250 1.5 500 0.3 V MHz pF min typ max 0.1 100 Unit A A V V V
*h
FE
Rank classification
Rank hFE Marking Symbol Q 200 ~ 400 AMQ R 250 ~ 500 AMR
0.750.15
0.20.1
q
0.80.1 1.60.15
q
Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1
s Features
3
483
Transistor
PC -- Ta
150 120 Ta=25C 125 100 50
2SC4656
IC -- VCE
60 VCE=10V 25C
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
100
80
Collector current IC (mA)
IB=300A 250A
40 Ta=75C 30 -25C 20
75
60
200A 150A
50
40
100A 20 50A
25
10
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 1 3 10 30 100 300 1000 25C -25C IC/IB=10 600
hFE -- IC
600 VCE=10V
fT -- I E
VCB=10V Ta=25C
Forward current transfer ratio hFE
500 Ta=75C 400 25C -25C 300
Transition frequency fT (MHz)
3 10 30 100
500
400
300
200
200
100
100
0 0.1
0.3
1
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
6
Collector output capacitance Cob (pF)
5
IE=0 f=1MHz Ta=25C
4
3
2
1
0 1 3 10 30 100
Collector to base voltage VCB (V)
484
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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