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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3484 2SK3484-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* Low on-state resistance RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 m MAX. (VGS = 4.5 V, ID = 8 A) * Low Ciss: Ciss = 900 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
100 20 16 22 30 1.0 150 -55 to +150 10 10
V V A A W W C C A mJ (TO-252)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 50 V, RG = 25 , VGS = 20 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 4.17 125 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D15069EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
The mark
shows major revised points.
2002
2SK3484
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 8 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 50 V, ID = 8 A VGS = 10 V RG = 0
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 4.7
2.0 9.5 100 110 900 110 50 9.0 5.0 30 4.0
2.5
Drain to Source On-state Resistance
125 148
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 80 V VGS = 10 V ID = 16 A IF = 16 A, VGS = 0 V IF = 16 A, VGS = 0 V di/dt = 100 A/ s
20 3.0 5.0 1.0 60 122
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 Starting Tch = 1 s Duty Cycle 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D15069EJ2V0DS
2SK3484
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50
PT - Total Power Dissipation - W
100 80 60 40 20
40
30
20 10
0
20
40
60
80
100
120 140 160
0 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse)
10 s
ID(DC)
ID - Drain Current - A
R (a DS( t V on) G Li S = mit 10 ed V)
10
DC
10
0 s
iss rD we d Po mite Li ipa
1 m s
10 m
tio n
s
1
TC = 25C Single Pulse 0.1 0.1 1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 125C/W
10 Rth(ch-C) = 4.17C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D15069EJ2V0DS
3
2SK3484
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V
ID - Drain Current - A
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25
10
ID - Drain Current - A
20 VGS =10 V 15 4.5 V
1
TA = -40C 25C 75C 150C
10
1 0.1
5 Pulsed 0 1 2 3 4 VDS - Drain to Source Voltage - V
0.01
1
2
3
4
5
0
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 150 ID = 16 A 100 8A 50
100 VDS = 10 V Pulsed 10 TA = 150C 75C 25C -40C
1
0.1
0.01 0.01
0
0.1
1
10
100
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 250 Pulsed
VGS(off) - Gate Cut-off Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4 VDS = 10 V ID = 1 mA
200
3
150 VGS = 4.5 V 100 10 V
2
1
50
0 0.1
1
10
100
0 -50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D15069EJ2V0DS
2SK3484
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 300
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed
Pulsed ID = 8 A
10
VGS = 10 V 0V
200 VGS = 4.5 V 10 V 100
1
0.1
0
-50
0
50
100
150
0.01
0
0.5
1
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
VDD = 50 V VGS = 10 V RG = 0 tf
1000
Ciss
100 td(off) td(on)
100
Coss
10 tr 1 0.1 1
10 0.01
0.1
1
10
Crss 100
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100
VDS - Drain to Source Voltage - V
80
100
VDD = 80 V 50 V 20 V
8 VGS 6
60
40
4
10
20 VDS ID = 16 A 0 5 10 15 20
2
1 0.1
1
10
100
0 25
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D15069EJ2V0DS
VGS - Gate to Drain Voltage - V
di/dt = 100 A/ s VGS = 0 V
10
5
2SK3484
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Current - A
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140
VDD = 50 V RG = 25 VGS = 20 0 V IAS 10 A
10
IAS = 10 A
EAS =1 0m J
120 100 80 60 40 20
1 VDD = 50 V RG = 25 VGS = 20 0 V 0.1 Startimg Tch = 25C 0.01 0.1
1
10
0 25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15069EJ2V0DS
2SK3484
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1.5 -0.1
+0.2
5.0 0.2
1.6 0.2
0.5 0.1
0.8 4.3 MAX.
4
5.5 0.2 13.7 MIN.
6.5 0.2 5.0 0.2 4
1.5 -0.1
+0.2
6.5 0.2
2.3 0.2
2.3 0.2 0.5 0.1
1
2
3
7.0 MIN.
1
2
3
1.1 0.2
+0.2
0.5 -0.1
2.3 2.3
0.75
0.5 -0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.7
1.1 0.2
2.0 MIN.
5.5 0.2 10.0 MAX.
1.0 MIN. 1.8TYP.
Data Sheet D15069EJ2V0DS
7
2SK3484
* The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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