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BG3130...
DUAL N-Channel MOSFET Tetrode
4 5 6
* Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) * Two AGC amplifiers in one single package * Integrated gate protection diodes * High AGC-range, low noise figure, high gain * Improved cross modulation at gain reduction BG3130
6 5 4
2 1
3
VPS05604
BG3130R
6 5 4
Drain AGC HF Input G2 G1 R G1 VGG
HF Output + DC
B A B
2 3 1 1
A
2
3
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BG3130 BG3130R
Package SOT363 SOT363 1=G1 1=G1 2=G2 2=S
Pin Configuration 3=D 3=D 4=D 4=D 5=S 5=G2 6=G1 6=G1
Marking KAs KHs
180 rotated tape loading orientation available
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) Symbol
Rthchs
Symbol VDS ID IG1/2SM V G1/G2S Ptot Tstg Tch
Value 8 25 1 6 200 -55 ... 150 150
Unit V mA V mW C
Value
280
Unit K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Feb-27-2004
BG3130...
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 A, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, V G2S = 0 V Gate2-source leakage current VG2S = 8 V, V G1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 k Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A VG2S(p) 0.6 VG1S(p) 0.7 V IDSX 10 mA IDSS 10 A +IG2SS 50 nA +IG1SS 50 A +V(BR)G2SS 6 15 +V(BR)G1SS 6 15 V(BR)DS 12 V Symbol min. Values typ. max. Unit
2
Feb-27-2004
BG3130...
Electrical Characteristics Parameter Symbol min. Forward transconductance Gate1 input capacitance f = 10 MHz Output capacitance f = 10 MHz Power gain f = 800 MHz f = 45 MHz Noise figure f = 800 MHz f = 45 MHz Gain control range VG2S = 4 ... 0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 dB AGC = 10 dB AGC = 40 dB 90 96 87 100 Gp F 45 1.3 1.7 Gp 24 31 dB dB Cdss 1.1 gfs Cg1ss Values typ. 33 1.9 max. mS pF Unit
AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling)
3
Feb-27-2004
BG3130...
Total power dissipation Ptot = (TS) amp. A = amp. B
300
Drain current ID = (I G1) VG2S = 4V amp. A = amp. B
30
mW
mA
P tot
200
20
150
ID
15 100 10 50 5 0 0 120 C 0 0
20
40
60
80
100
150
10
20
30
40
50
60
70
80 A
100
TS
IG1
Output characteristics ID = (V DS) amp. A = amp. B
Gate 1 current IG1 = (VG1S) VDS = 5V, VG2S = Parameter amp. A = amp. B
225
22
mA 1.3V
A
4V
18 16
1.2V
175
VG1S
ID
14 12 10 8 6 4 2 0 0 2 4 6 8 10
V
150 125
3.5V
1.1V
3V 1V
100 75 50
2V
2.5V
0.8V
25 0 0
14
0.4
0.8
1.2
1.6
2
2.4
V
3.2
VDS
IG1
4
Feb-27-2004
BG3130...
Gate 1 forward transconductance g fs = (ID), VDS = 5V, VG2S = Parameter amp. A = amp. B
40
mS 4V
Drain current ID = (V G1S) VDS = 5V, VG2S = Parameter amp. A = amp. B
32
A 4V 3V
30
3.5V
24
2.5V
g fs
3V
20
ID
25
20
16
2V
15
2V
2.5V
12
10
8
1.5V
5
4
0 0
4
8
12
16
20
24
28 mA
36
0 0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 V
2
ID
VG1S
Drain current ID = (VGG ) amp.A=amp.B VDS = 5V, VG2S = 4V, RG1 = 120k
(connected to VGG, VGG =gate1 supply voltage)
13 mA 11 10 9
Drain current ID = (VGG) VG2S = 4V, RG1 = Parameter in k amp. A = amp. B
22
mA 70 80
18 16
100 120
ID
8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4
V
ID
14 12 10 8 6 4 2
5
0 0
1
2
3
4
5
V
7
VGG
VGG=VDS
5
Feb-27-2004
BG3130...
Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 k
120
dBV
V unw
100 90 80 0
10
20
30
dB
50
AGC
Cossmodulation test circuit
VAGC
VDS 4n7
R1 10 kOhm 4n7
2.2 H
4n7
RL 50 Ohm 4n7 RGEN 50 Ohm RG1
50 Ohm
VGG
6
Feb-27-2004

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