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| IRF640, RF1S640SM Data Sheet June 1999 File Number 1585.5 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17422. Features * 18A, 200V * rDS(ON) = 0.180 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRF640 RF1S640SM PACKAGE TO-220AB TO-263AB BRAND IRF640 RF1S640 Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) 4-208 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRF640, RF1S640SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF640, RF1S640SM 200 200 18 11 72 20 125 1.0 580 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 1) Gate to Source Leakage Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab to Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances D LD TEST CONDITIONS ID = 250A, VGS = 0V, (Figure 10) VGS = VDS , ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) VGS = 20V ID = 10A, VGS = 10V (Figures 8, 9) VDS 10V, ID = 11A (Figure 12) VDD = 100V, ID 18A, RGS = 9.1, RL = 5.4, MOSFET Switching Times are Essentially Independent of Operating Temperature MIN 200 2 18 6.7 - TYP 0.14 10 13 50 46 35 43 8 22 1275 400 100 3.5 MAX 4 25 250 100 0.18 21 77 68 54 64 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source On Resistance (Note 1) Forward Transconductance (Note 1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance VGS = 10V, ID 18A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 4.5 - nH Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad G LS S 7.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA RJA Free Air Operation, IRF640 RF1S640SM Mounted on FR-4 Board with Minimum Mounting Pad - - 1 62 62 oC/W oC/W oC/W 4-209 IRF640, RF1S640SM Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 2) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 18 72 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 18A, dISD/dt = 100A/s TJ = 25oC, ISD = 18A, dISD/dt = 100A/s 120 1.3 240 2.8 2.0 530 5.6 V ns C 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 3.37mH, RG = 25, peak IAS = 18A. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 20 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 16 12 8 4 0 0 50 100 150 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC , TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 0.01 0.001 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 1 10 t1 t2 tP, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-210 IRF640, RF1S640SM Typical Performance Curves 1000 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC ID , DRAIN CURRENT (A) 100 10s 100s 10 1ms 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE 1 1 DC ID , DRAIN CURRENT (A) Unless Otherwise Specified (Continued) 30 10V 8V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 7V 18 24 12 6V 6 5V 0 4V 0 12 24 36 48 60 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 8V VGS = 10V ID , DRAIN CURRENT (A) VGS = 7V 100 ID , DRAIN CURRENT (A) 24 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V 10 18 VGS = 6V 25oC 150oC 1 12 6 VGS = 4V VGS = 5V 0 0 1.0 2.0 3.0 4.0 5.0 VDS , DRAIN TO SOURCE VOLTAGE (V) 0.1 0 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 1.5 rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () 1.2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 3.0 2.4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 18A 0.9 1.8 0.6 1.2 0.3 VGS= 10V VGS = 20V 0.6 0 0 15 30 45 60 75 ID , DRAIN CURRENT (A) 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4-211 IRF640, RF1S640SM Typical Performance Curves 1.25 ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.15 C, CAPACITANCE (pF) 2400 Unless Otherwise Specified (Continued) 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1.05 1800 CISS 1200 COSS 600 CRSS 0.95 0.85 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 100 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 15 12 25oC 9 150oC 6 ISD , SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1000 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 150oC gfs , TRANSCONDUCTANCE (S) 100 25oC 10 3 0 0 6 12 18 24 30 ID , DRAIN CURRENT (A) 1 0 0.4 0.8 1.2 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 28A 16 VDS = 40V VDS = 100V 12 VDS = 160V 8 4 0 0 15 30 45 60 75 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-212 IRF640, RF1S640SM Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 4-213 IRF640, RF1S640SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-214 |
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