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| PD - 93851A IRF7402 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S S S G 1 8 A A D D D D 2 7 VDSS = 20V 3 6 4 5 RDS(on) = 0.035 Description Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 6.8 5.4 54 2.5 1.6 0.02 12 5.0 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 2/22/00 IRF7402 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.024 --- V/C Reference to 25C, ID = 1mA 0.035 VGS = 4.5V, ID = 4.1A 0.050 VGS = 2.7V, ID = 3.5A --- --- V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 1.9A --- 1.0 VDS = 16V, VGS = 0V A --- 25 VDS = 16V, VGS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 22 ID = 3.8A 2.0 3.0 nC VDS = 16V 6.3 9.5 VGS = 4.5V, See Fig. 6 and 12 5.1 --- VDD = 10V 47 --- ID = 3.8A ns 24 --- RG = 6.2 32 --- RD = 2.6 650 --- VGS = 0V 300 --- pF VDS = 15V 150 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 51 69 2.5 A 54 1.2 77 100 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 3.8A, VGS = 0V TJ = 25C, IF = 3.8A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 300s; duty cycle 2%. ISD 3.8A, di/dt 96A/s, VDD V(BR)DSS, TJ 150C When mounted on 1 inch square copper board, t<10 sec This data sheet has curves & data from IRF7601 2 www.irf.com IRF7402 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V TO P 100 I , D rain-to-S ou rc e C urre nt (A ) D 10 I , D rain-to-S ou rc e C urre nt (A ) D VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V TO P 10 1 1 1 .5V 1.5V 0.1 0.1 1 20 s P U LS E W ID TH TJ = 2 5C A 10 0.1 0.1 1 20 s P U LS E W ID TH TJ = 1 50 C A 10 V D S , D rain-to-S ourc e V oltage (V ) V D S , D rain-to-S ourc e V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D = 3.8A I D , D rain-to-So urce C urren t (A ) 1.5 10 T J = 1 5 0 C 1.0 T J = 25 C 1 0.5 0.1 1.5 2.0 2.5 V DS = 10V 2 0 s P UL S E W ID TH 3.0 3.5 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 4.5 V 100 120 140 160 A V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7402 1200 10 1000 V G S, G ate-to-S ource V oltage (V ) V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d I D = 3 .8A V D S = 16 V 8 C , Capacitance (pF) C iss 800 C oss 600 6 4 400 C rss 2 200 0 1 10 100 A 0 0 4 8 12 FO R TE S T CIR C U IT S E E FIG U R E 9 16 20 24 A V D S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I S D , Reverse D rain C urrent (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 T J = 15 0C T J = 2 5C 1 I D , Drain Current (A) 100 100us 10 1ms 0.1 0.4 0.8 1.2 1.6 V G S = 0V 2.0 A 1 1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 2.4 100 V S D , S ourc e-to-D rain V oltage (V ) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7402 8.0 V DS VGS RD D.U.T. + I D , Drain Current (A) 6.0 RG - V DD 4.5V 4.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJC ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 1 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7402 Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 4.5V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit RDS(on) , Drain-to-Source On Resistance ( ) VGS = 2.5V 0.2 RDS(on) , Drain-to-Source On Resistance ( ) 0.3 0.05 0.04 ID , = 5.7A 0.1 0.03 VGS =5V 0.0 0 3 6 9 12 15 A 0.02 2 4 6 8 A I , , Drain Current (A) V /5 , Gate-to-Source Voltage (V) Fig 13. Typical On-Resistance Vs. Drain Current Fig 14. Typical On-Resistance Vs. Gate Voltage 6 www.irf.com IRF7402 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 7 IRF7402 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/2000 8 www.irf.com |
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