 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NONLINEAR MODEL SCHEMATIC Q1 Lgx GATE 0.35nH NE32900 Ldx DRAIN 0.28nH Lsx 0.025nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.825 0 7 0.148 0.081 0.05 2.5 0.7 0.6 1e-14 1 0 0 3e-12 0.095e-12 5000 1e-9 0.42e-12 0.023e-12 0.3 0.6 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 7 4 4 0 0 1 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.5 to 26.5 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 25 mA IDSS = 54.3 mA @ VGS = 0, VDS = 2 V Date: 1/98 (1) Series IV Libra TOM Model California Eastern Laboratories EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
Price & Availability of NE32900
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |