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| J/SST/U308 Series N-Channel JFETs J308 J309 J310 Product Summary Part Number J308 J309 J310 SST308 SST309 SST310 U309 U310 SST308 SST309 SST310 12 12 24 12 12 24 12 24 U309 U310 VGS(off) (V) -1 to -6.5 -1 to -4 -2 to -6.5 -1 to -6.5 -1 to -4 -2 to -6.5 -1 to -4 -2.5 to -6 V(BR)GSS Min (V) -25 -25 -25 -25 -25 -25 -25 -25 gfs Min (mS) 8 10 8 8 10 8 10 10 IDSS Min (mA) Features D Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz D Very Low Noise: 2.7 dB @ 450 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation Benefits D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification Applications D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches Description The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low cost J series TO 226AA (TO 92) packaging supports automated assembly with tape and reel options. The SST series TO 236 (SOT 23) package provides TO-226AA (TO-92) D S G 1 D S 1 3 2 2 2 D Top View U309 U310 3 G and Case G TO-236 (SOT-23) S 1 surface mount capabilities and is available with tape and reel options. The U series hermetically sealed TO 206AC (TO 52) package supports full military processing. (See Military and Packaging Information for further details.) For similar dual products packaged in the TO 78, see the U430/431 data sheet. TO-206AC (TO-52) 3 Top View J308 J309 J310 Top View SST308 (Z8)* SST309 (Z9)* SST310 (Z0)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70237. Applications information may also be obtained via FaxBack, request document #70597. Siliconix S-52424--Rev. F, 14-Apr-97 1 J/SST/U308 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current : (J/SST Prefixes) . . . . . . . . . . . . . . . . 10 mA (U Prefix) . . . . . . . . . . . . . . . . . . . . . 20 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Storage Temperature : (J/SST Prefixes) . . . . . . . . . . -55 to 150_C (U Prefix) . . . . . . . . . . . . . . . -65 to 175_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : (J/SST Prefixes)a . . . . . . . . . . . . . 350 mW (U Prefix)b . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.8 mW/_C above 25_C b. Derate 4 mW/_C above 25_C Specificationsa for J/SST308, J/SST309 and J/SST310 Limits J/SST308 J/SST309 J/SST310 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 9 V, ID = 10 mA VGS = 0 V, ID = 1 mA IG = 10 mA VDS = 0 V J -35 -25 -1 12 -6.5 60 -1 -1 -25 -1 12 -4 30 -1 -1 -25 -2 24 -6.5 60 -1 -1 V mA nA mA pA W -0.002 -0.001 -15 35 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ci iss Crss en VDS = 10 V, ID = 10 mA S f = 1 kHz J VDS = 10 V VGS = -10 V f = 1 MHz SST J SST VDS = 10 V, ID = 10 mA f = 100 Hz 14 110 4 4 1.9 1.9 6 nV Hz 2.5 2.5 2.5 pF 8 250 5 10 250 5 8 250 5 mS mS High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance Common Gate Power Gaind Common-Gate Noise Figure gf fg gog VDS = 10 V S ID = 10 mA Gpg NF f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz 14 13 0.16 0.55 16 11.5 1.5 2.7 NZB dB mS Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Gain (Gpg) measured at optimum input noise match. 2 Siliconix S-52424--Rev. F, 14-Apr-97 J/SST/U308 Series Specificationsa for U309 and U310 Limits U309 U310 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 9 V, ID = 10 mA VGS = 0 V, ID = 1 mA IG = 10 mA , VDS = 0 V -35 -25 -1 12 -4 30 -0.15 -0.15 -25 V -2.5 24 -6 60 -0.15 -0.15 mA nA mA pA W 1 1 V -0.002 -0.001 -15 35 0.7 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = 10 V, ID = 10 mA f = 100 Hz 14 VDS = 10 V, ID = 10 mA S f = 1 kHz 110 4 VDS = 10 V, VGS = -10 V S f = 1 MHz 1.9 6 2.5 2.5 nV Hz 250 5 250 5 pF 10 10 mS mS High Frequency Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Common Gate Power Gaind f = 105 MHz gf fg f = 450 MHz f = 105 MHz gog VDS = 10 V ID = 10 mA A Gpg f = 450 MHz f = 105 MHz f = 450 MHz f = 105 MHz Noise Figure NF f = 450 MHz Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Gain (Gpg) measured at optimum input noise match. 2.7 3.5 3.5 NZB 14 13 0.16 0.55 16 11.5 1.5 14 10 2 14 10 2 dB mS Siliconix S-52424--Rev. F, 14-Apr-97 3 J/SST/U308 Series Typical Characteristics 100 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 50 gfs - Forward Transconductance (mS) Gate Leakage Current 10 nA IG @ ID = 10 mA 1 nA I G - Gate Leakage TA = 125_C 200 mA 80 40 60 gfs 40 IDSS 30 100 pA IGSS @ 125_C 200 mA 20 10 pA 10 mA TA = 25_C 1 pA IGSS @ 25_C 20 10 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0.1 pA 0 3 6 9 12 15 VDG - Drain-Gate Voltage (V) 100 rDS(on) - Drain-Source On-Resistance (k W ) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 300 g fs - Forward Transconductance (mS) 20 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz g os - Output Conductance ( mS) 80 240 16 TA = -55_C 12 60 rDS 180 gos 120 40 8 25_C 125_C 20 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 60 4 0 0 0.1 1 ID - Drain Current (mA) 10 Output Characteristics 15 VGS(off) = -1.5 V 12 I D - Drain Current (mA) -0.2 V 9 -0.4 V 6 -0.6 V 3 -0.8 V -1.0 V 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 0 0 0.2 I D - Drain Current (mA) VGS = 0 V 24 30 Output Characteristics VGS(off) = -3 V VGS = 0 V 18 -0.4 V -0.8 V -1.2 V -1.6 V 12 6 -2.0 V -2.4 V 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 4 Siliconix S-52424--Rev. F, 14-Apr-97 J/SST/U308 Series Typical Characteristics (Cont'd) Output Characteristics 20 VGS(off) = -1.5 V VGS = 0 V 16 I D - Drain Current (mA) I D - Drain Current (mA) -0.2 V 40 -0.4 V 30 -0.8 V -1.2 V -1.6 V 10 -2.0 V -2.4 V 0 2 4 6 8 10 50 VGS(off) = -3 V VGS = 0 V Output Characteristics 12 -0.4 V -0.6 V -0.8 V -1.0 V 8 20 4 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) 0 VDS - Drain-Source Voltage (V) Transfer Characteristics 30 VGS(off) = -1.5 V 24 I D - Drain Current (mA) I D - Drain Current (mA) VDS = 10 V 80 100 Transfer Characteristics VGS(off) = -3 V VDS = 10 V 18 TA = -55_C 25_C 60 TA = -55_C 25_C 12 40 6 125_C 20 125_C 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 30 g fs - Forward Transconductance (mS) g fs - Forward Transconductance (mS) VGS(off) = -1.5 V 24 TA = -55_C 25_C VDS = 10 V f = 1 kHz 50 Transconductance vs. Gate-Source Voltage VGS(off) = -3 V 40 TA = -55_C 30 25_C 20 125_C 10 VDS = 10 V f = 1 kHz 18 125_C 12 6 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Siliconix S-52424--Rev. F, 14-Apr-97 5 J/SST/U308 Series Typical Characteristics (Cont'd) 100 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 80 VGS(off) = -1.5 V 60 A V - Voltage Gain 80 60 40 VGS(off) = -3 V 20 40 VGS(off) = -1.5 V 20 VGS(off) = -3 V 0 1 10 ID - Drain Current (mA) 100 0 0.1 1 ID - Drain Current (mA) 10 15 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 12 VDS = 0 V 8 9 6 VDS = 0 V 4 6 3 VDS = 5 V 2 VDS = 5 V 0 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 100 Input Admittance vs. Frequency 100 Forward Admittance vs. Frequency gig 10 (mS) big 1 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate 0.1 100 200 500 1000 f - Frequency (MHz) 0.1 100 (mS) 10 -gfg bfg 1 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate 200 500 1000 f - Frequency (MHz) 6 Siliconix S-52424--Rev. F, 14-Apr-97 J/SST/U308 Series Typical Characteristics (Cont'd) Reverse Admittance vs. Frequency 10 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate 1 (mS) (mS) -brg +grg 0.1 -grg 10 bog 100 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate Output Admittance vs. Frequency 1 gog 0.01 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 150 Output Conductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz (nV / Hz) g os - Output Conductance ( mS) 16 120 12 ID = 1 mA 8 90 e n - Noise Voltage TA = -55_C 60 25_C 30 125_C 0 4 ID = 10 mA 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0.1 1 ID - Drain Current (mA) 10 Siliconix S-52424--Rev. F, 14-Apr-97 7 |
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