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| Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm s Features q q q 2.9 -0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -35 -55 -35 -55 -5 -100 -50 200 150 -55 ~ +150 Unit 1.1 -0.1 +0.2 2 emitter voltage 2SA1035 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : F(2SA1034) H(2SA1035) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h FE1 (Ta=25C) Symbol ICBO ICEO Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -100mA, IB = -10mA*2 VCE = -1V, IC = -100mA*2 VCB = -5V, IE = 2mA, f = 200MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT *2 min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 V max -100 -1 0.16 -0.06 +0.1 0.4 -0.05 +0.1 s Absolute Maximum Ratings 1.90.2 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 2.8 -0.3 0.650.15 +0.2 1.5 -0.05 +0.25 0.650.15 0.95 1 +0.2 0.95 3 1.45 Unit nA A V 2SA1034 2SA1035 2SA1034 2SA1035 VCBO VCEO VEBO hFE*1 VCE(sat) VBE fT NV -35 -55 -35 -55 -5 180 - 0.7 200 700 - 0.6 -1.0 V V V V MHz 150 mV Rank classification Rank hFE R 180 ~ 360 2SA1034 2SA1035 FR HR S 260 ~ 520 FS HS T 360 ~ 700 FT HT Pulse measurement Marking Symbol 1 Transistor PC -- Ta 240 -160 -140 200 2SA1034, 2SA1035 IC -- VCE Ta=25C -160 VCE=-5V Ta=25C -140 IC -- IB Collector power dissipation PC (mW) Collector current IC (mA) -120 -100 -80 -60 -300A -250A -200A -150A -100A 160 120 Collector current IC (mA) IB=-350A -120 -100 -80 -60 -40 -20 0 80 -40 -50A -20 40 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IB -- VBE -800 VCE=-5V Ta=25C -700 -100 -120 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE=-5V 25C Ta=75C -80 -25C VCE(sat) -- IC IC/IB=10 Base current IB (A) -600 -500 -400 -300 -200 -100 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Collector current IC (mA) -60 -40 - 0.3 25C - 0.1 Ta=75C -20 -25C - 0.03 - 0.01 -0.1 -0.3 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -1 -3 -10 -30 -100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-5V 500 450 500 Ta=75C 400 25C fT -- IE Collector output capacitance Cob (pF) VCB=-5V Ta=25C 20 18 16 14 12 10 8 6 4 2 0 - 0.1 - 0.3 Cob -- VCB IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -10 -30 -100 400 350 300 250 200 150 100 50 300 -25C 200 100 0 - 0.1 - 0.3 -1 -3 0 0.1 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NV -- VCE 160 140 IC=-1mA GV=80dB Function=FLAT 300 IC=-1mA GV=80dB Function=RIAA 2SA1034, 2SA1035 NV -- VCE 160 140 VCE=-10V GV=80dB Function=FLAT NV -- IC Noise voltage NV (mV) Noise voltage NV (mV) 120 Rg=100k 100 80 60 40 4.7k 20 0 -1 22k Noise voltage NV (mV) 240 Rg=100k 180 120 100 Rg=100k 80 60 22k 40 4.7k 20 0 - 0.01 120 22k 60 4.7k 0 -1 -3 -10 -30 -100 -3 -10 -30 -100 - 0.03 - 0.1 - 0.3 -1 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) NV -- IC 300 VCE=-10V GV=80dB Function=RIAA 160 140 NV -- Rg 300 VCE=-10V GV=80dB Function=FLAT NV -- Rg VCE=-10V GV=80dB Function=RIAA Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 IC=-1mA 40 - 0.5mA 20 0 - 0.1mA 180 Noise voltage NV (mV) 240 240 180 120 Rg=100k 22k 4.7k 120 60 60 IC=-1mA - 0.5mA - 0.1mA 0 - 0.01 0 1 3 10 30 100 1 3 10 30 100 - 0.03 - 0.1 - 0.3 -1 Collector current IC (mA) Signal source resistance Rg (k) Signal source resistance Rg (k) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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