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| DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is n-Chanel MOS Field Effect Transistor designed high current switching application. PACKAGE DIMENSIONS inmillimeters 3.00.3 FEATURE * Low On-Resistance RDS(on)1 = 14 m Typ. (VGS = 10 V, ID =18 A) RDS(on)2 = 22 m Typ. (VGS = 4 V, ID = 18 A) * Low Ciss Ciss = 1250 pF Typ. 10.6 MAX. 3.60.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.30.2 4 123 1.30.2 6.0 MAX. * Built-in G-S Protection Diode 0.50.2 2.80.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Maximum Voltages and Currents Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Maximum Power Dissipation Total Power Dissipation (TA = 25 C) Total Power Dissipation (TC = 25 C) Maximum Temperature Channel Temperature Storage Temperature * PW 10 s, Duty Cycle 1% Tch Tstg 150 -55 to + 125 C C PT PT 1.5 60 W W VDSS VGSS ID(DC) ID(Pulse) 30 20 35 140 V V A A 0.750.1 2.54 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) Drain Gate Dody Diode Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D11007EJ1V0DS00 (1st edition) Date Published May 1997 N (c) 1997 2SK2941 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBLO RDS(on)1 RDS(on)2 VGS(off) I yfs I IDDS IGSS Ciss Coss Crss td(on) tr td(off) tr QG QGS QGD VF(S-D) trr Qrr 1250 900 460 40 430 160 220 50 4.5 21 1.0 65 90 1.0 8.0 MIN. TYP. 14 22 1.5 25 10 10 MAX. 20 33 2.0 UNIT m m V S TEST CONDITION VGS = 10 V, ID = 18 A VGS = 4 V, ID = 18 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 18 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, VGS = 0, f =1 MHz A A pF pF pF ns ns ns ns nC nC nC V ns nC ID = 18 A, VGS(on) = 10 V VDD = 15 V, RG = 10 ID = 35 A, VDD = 24 V, VGS = 10 V IF = 35 A, VGS = 0 IF = 35 A, VGS = 0, di/dt = 100 A/s Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL VGS PG RG RG = 10 Wave Form VGS 0 ID 10 % VGS(on) D.U.T. IG = 2 mA 90 % PG 50 RL VDD VDD 90 % ID Wave Form VGS 0 t t = 1 s Duty Cycle 1 % 0 90 % ID 10 % tf toff 10 % td(on) ton tr td(off) 2 2SK2941 ELECTRICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W PT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 Tc = 25 C Single Pulse ID(Pulse) 100 ID(DC) 10 200 Pulsed 160 ID - Drain Current - A VGS = 10 V ID - Drain Current - A 120 PW 10 m = s 1m s 80 40 VGS = 4 V 0 10 DC m s 20 0 m s 0 0.5 1.0 1.5 VDS - Drain to Source Voltage - V 1 0.1 1 10 VDS - Drain to Source Voltage - V 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a) = 83.3 (C/W) 100 10 Rth(ch-c) = 2.08 (C/W) 1 Single Pulse Tc = 25 C 0.1 1m 10m 100m 1 10 100 1 000 10 000 PW - Pulse Width - s 3 2SK2941 VGS(off) - Gate to Source Cutoff Voltage - V 2.0 VDS = 10 V ID = 1 mA 1.5 RDS(on) - Drain to Source On - State resistance - m GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON - STATE RESISTANCE vs. DRAIN CURRENT 30 VGS = 4 V 20 1.0 VGS = 10 V 10 0.5 0 -50 0 50 100 Tch - Channel Temperature - C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 150 0 1 10 100 ID - Drain Current - A RDS(on) - Drain to Source On - State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 100 ID = 7 A 18 A 35 A 100 |yfs| - Forward Transfer Admittance - S TA = -25 C 25 C 75 C 125 C 10 V DS= 10 V Pulsed 50 1 10 100 1000 0 ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 1000 VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C 10 000 Ciss, Coss, Crss - Capacitance - pF 5 10 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 f =1 MHz ID - Drain Current - A 100 1000 Ciss Coss Crss 100 10 0 5 VGS - Gate to Source Voltage - V 10 10 0.1 1 10 VDS - Drain to Source Voltage - V 4 2SK2941 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 1000 1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed ISD - Diode Dorward Current - A tr tf t d(off) 100 td(on) 100 VGS = 4V 10 VGS = 0V 10 VDD = 15 V VGS =10 V Rin =10 1.0 1 0.1 1 10 ID - Drain Current - A 100 0.1 0 0.8 1.2 1.6 2.0 0.4 VSD - Source to Drain Voltage - V 2.4 RDS(on) - Drain to Source On - State Resistance - m DRAIN TO SOURCE ON-RESISTANCE vs. CHANNEL TEMPERATURE DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 35 A VGS VDD = 24 V 15 V 6V 16 VDS - Drain to Source Voltage - V 100 80 60 40 20 0 VGS = 4 V 30 12 10 8 6 20 10 VDS 0 20 40 60 Qg - Gate Charge - nC 80 4 2 0 VGS = 10 V -50 0 50 100 150 Tch - Channel Temperature - C REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 di/dt = 100 A/s VGS = 0 trr - Reverse Recovery Diode - ns 100 10 1 0.1 1 10 100 I D - Drain Current - A 5 VGS - Gate to Source Voltage - V ID = 18 A Pulsed 14 2SK2941 ELECTRICAL REFERENCE (TA = 25 C) Ducument Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Application circuits using Power MOS FET Safe operating area of Power MOS FET Ducument No. C11745E C11531E C10535E C10943X MEI-1202 TEA-1035 TEA-1037 6 2SK2941 [MEMO] 7 2SK2941 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2 |
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