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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 (Typ.)
IRLM120A
BVDSS = 100 V RDS(on) = 0.22 ID = 2.3 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds 300 - 55 to +150
o o o o
Value 100 2.3 1.85
(1)
Units V A A V mJ A mJ V/ns W W/ C
o
18 20 105 2.3 0.27 6.5 2.7 0.022
(2) (1) (1) (3)
C
Thermal Resistance
Symbol RJA Characteristic Junction-to-Ambient * Typ. -Max. 46.3 Units
o
C/W
* When mounted on the minimum pad size recommended (PCB Mount).
1
IRLM120A
Electrical Characteristics (TC=25 oC unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Min. Typ. Max. Units 100 -1.0 -----------------0.09 ------4.6 90 39 5 10 19 9 10.2 1.7 6.0 --2.0 100 -100 10 100 0.22 -115 50 20 30 50 30 15 --nC ns A V
o
N-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=125 C VGS=5V,ID=1.15A VDS=40V,ID=1.15A
(4) (4)
o
V/ C ID=250A V nA
340 440 pF
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, RG=9 See Fig 13 VDS=80V,VGS=5V, ID=9.2A See Fig 6 & Fig 12 (4)(5)
(4)(5)
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
(1) (4)
Min. Typ. Max. Units --------98 0.34 2.3 18 1.5 --A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=2.3A,VGS=0V TJ=25 C,IF=9.2A diF/dt=100A/s
(4)
o o
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=30mH, IAS=2.3A, VDD=25V, RG=27, Starting TJ =25 oC ISD < 9.2A, di/dt < 300A/s, VDD < BVDSS , Starting TJ =25 oC Pulse Test : Pulse Width = 250s, Duty Cycle < 2% Essentially Independent of Operating Temperature
2
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS Top : 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V
IRLM120A
Fig 2. Transfer Characteristics
ID , Drain Current [A]
11 0
ID , Drain Current [A]
11 0
1 0 oC 5 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =4 V . DS 0 3 2 0 s P l e T s .5 us et 6 8 1 0
10 0
@Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 -1 0 1 0 10 0 11 0
- 5 oC 5 1 -1 0 0 2 4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
04 .
Fig 4. Source-Drain Diode Forward Voltage
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
03 .
V =5V GS
11 0
RDS(on) , [ ]
02 .
10 0 @Nts: oe 1 V =0V . GS us et 2 2 0 s P l e T s .5 10 . 12 . 14 . 16 . 18 . 20 . 22 .
01 .
V =1 V 0 GS @ N t : T = 2 oC oe J 5
1 0 oC 5 2 oC 5 1 -1 0 04 . 06 . 08 .
00 . 0
1 0
2 0
3 0
4 0
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
60 0 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 6
Fig 6. Gate Charge vs. Gate-Source Voltage
40 8
C iss
V =2 V 0 DS
VGS , Gate-Source Voltage [V]
Capacitance [pF]
V =5 V 0 DS V =8 V 0 DS 4
30 6
C oss
20 4 C rss 10 2
@Nts: oe 1 V =0V . GS 2 f=1Mz . H
2
@Nts:I =92A oe . D 0 0 2 4 6 8 1 0 1 2
00 1 0
11 0
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
3
IRLM120A
Fig 7. Breakdown Voltage vs. Temperature
12 . 25 .
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
20 .
BVDSS , (Normalized)
11 .
RDS(on) , (Normalized)
15 .
10 .
10 . @Nts: oe 1 V =5V .
GS
09 .
@Nts: oe 1 V =0V .
GS
05 .
2 I = 2 0 A .D 5 08 . -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0
o
2 I =46A .D . 15 7 00 . -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
15 2
10 5
TJ , Junction Temperature [ C]
TJ , Junction Temperature [oC]
12 0
Fig 9. Max. Safe Operating Area
Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y
1 0
Fig 10. Max. Drain Current vs. Case Temperature
ID , Drain Current [A]
11 0
1 0 s 0 1m s 1m 0s D C
ID , Drain Current [A]
12 0
8
6
10 0
@Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us
4
2
1 -1 0 0 1 0
11 0
0 2 5
5 0
7 5
10 0
15 2
10 5
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Thermal Response
101
Fig 11. Thermal Response
D=0.5 100 0.2 0.1 0.05 10- 1 0.02 0.01 single pulse @ Notes : 1. Z J C (t)=3.5 o C/W Max.
2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)
PDM t1 t2
Z (t) ,
JC
10
-2
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , Square Wave Pulse Duration
[sec]
4
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRLM120A
* Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT Vin 10V
td(on) t on tr td(off) t off tf 10%
Vout VDD
( 0.5 rated VDS )
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 5V
tp
ID (t) VDS (t) Time
5
IRLM120A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
N-CHANNEL POWER MOSFET
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
* dv/dt controlled by RG * IS controlled by Duty Factor D
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM
STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H3

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