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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMJT9435/D Bipolar Power Transistors PNP Silicon * Collector -Emitter Sustaining Voltage -- VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc * High DC Current Gain -- hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc * Low Collector -Emitter Saturation Voltage -- VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc * SOT-223 Surface Mount Packaging MMJT9435 Motorola Preferred Device POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS C 2,4 CASE 318E-04, Style 1 B1 E3 4 C Schematic B 1 C 2 E 3 Top View Pinout IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I II I I IIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I II II I IIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol VCEO VCB VEB IB Value 30 45 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 6.0 1.0 3.0 5.0 Base Current -- Continuous Collector Current -- Continuous Collector Current -- Peak IC Total Power Dissipation @ TC = 25_C Derate above 25_C Total PD @ TA = 25_C mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25_C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 3.0 24 1.56 0.72 Watts mW/_C Watts TJ, Tstg - 55 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RJC RJA RJA TL Max 42 80 174 Unit Thermal Resistance - Junction to Case - Junction to Ambient on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material - Junction to Ambient on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds _C/W 260 _C This document contains information on a new product. Specifications and information are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 (c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIII III I I I I IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MMJT9435 (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) fT = |hFE| S ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS(1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 2 Current-Gain -- Bandwidth Product(2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Base-Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Emitter Cutoff Current (VBE = 5.0 Vdc) Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125C) Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Characteristic VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Motorola Bipolar Power Transistor Device Data VEBO IEBO ICER Cob hFE Cib fT Min 125 110 90 6.0 30 -- -- -- -- -- -- -- -- -- -- -- 0.155 -- -- Typ 135 100 220 -- -- -- -- -- -- -- -- -- 110 0.210 0.275 0.550 1.10 1.25 Max 150 20 200 10 -- -- -- -- -- -- -- Adc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF -- MMJT9435 VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1.0 0.25 0.75 0.20 1.2 A 0.15 0.8 A 0.5 A 0.50 1.2 A 0.25 0.5 A 0 0.25 A 1.0 10 0.8 A IC = 3.0 A 0.10 0.05 0 1.0 10 IC = 0.25 A 100 1000 100 1000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1000 1000 150C HFE, DC CURRENT GAIN 150C HFE, DC CURRENT GAIN 25C 100 - 55C 25C 100 - 55C VCE = 1.0 V 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 VCE = 4.0 V 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 3. DC Current Gain Figure 4. DC Current Gain 10 IC/IB = 10 1.0 VBE(sat) V, VOLTAGE (V) VBE(sat) V, VOLTAGE (V) 1.0 0.1 VCE(sat) 0.1 VCE(sat) IC/IB = 50 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 5. "On" Voltages Figure 6. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 MMJT9435 1.2 1000 V, VOLTAGE (V) 0.8 25C 150C 0.4 CAPACITANCE (pF) - 55C 100 Cob VCE = 4.0 V 0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. VBE(on) Voltage Figure 8. Output Capacitance f t , CURRENT-GAIN BANDWIDTH PRODUCT 1000 IC , COLLECTOR CURRENT (AMPS) VCE = 10 V ftest = 1.0 MHz TA = 25C 10 0.5 ms 1.0 5.0 ms 100 ms 0.1 100 0.01 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.001 0.1 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. Current-Gain Bandwidth Product Figure 10. Active Region Safe Operating Area 4.0 PD , POWER DISSIPATION (WATTS) 3.0 TC 2.0 1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (C) There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. v Figure 11. Power Derating 4 Motorola Bipolar Power Transistor Device Data MMJT9435 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.01 RJA(t) = r(t) JA JA = 174C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) JA(t) 0.01 0.1 t, TIME (seconds) 1.0 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 0.0001 0.0001 0.001 Figure 12. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MMJT9435 PACKAGE DIMENSIONS A F 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S 1 2 3 B STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR D L G J C 0.08 (0003) H M K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 CASE 318E-04 ISSUE H Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://www.mot.com/SPS/ 6 Motorola Bipolar Power Transistor Device Data MMJT9435/D |
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