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| PD - 93835 SI4420DY HEXFET(R) Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive S S S G 1 8 7 A A D D D D 2 VDSS = 30V 3 6 4 5 RDS(on) = 0.009 Description This N-channel HEXFET(R) power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. 30 12.5 10 50 2.5 1.6 0.02 400 20 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 1/3/2000 SI4420DY Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.028 --- --- --- 29 --- --- --- --- 52 8.7 12 15 10 55 47 2240 1100 150 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.009 VGS = 10V, ID = 12.5A 0.013 VGS = 4.5V, ID = 10.5A --- V VDS = VGS, ID = 250A --- S VDS = 15V, ID = 12.5A 1.0 VDS = 30V, VGS = 0V A 5.0 VDS = 30V, VGS = 0V, T J = 55C -100 VGS = -20V nA 100 VGS = 20V 78 ID = 12.5A --- nC VDS = 15V --- VGS = 10V, See Fig. 6 --- VDD = 15V --- ID = 1.0A ns --- RG = 6.0 --- RD = 15, --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units --- --- --- --- --- --- --- 52 2.3 A 50 1.1 78 V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.3A, VGS = 0V TJ = 25C, IF = 2.3A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 13mH RG = 25, IAS = 8.9A. (See Figure 15) Pulse width 300s; duty cycle 2%. When mounted on FR4 Board, t 10 sec 2 www.irf.com SI4420DY 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 4.5V 10 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 1000 ID = 12.5A ID, Drain-to-Source Current ( ) TJ = 25C T J = -55C T J = 150C 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 0.5 10 4.0 5.0 6.0 VDS = 25V 20s PULSE WIDTH 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 SI4420DY 4000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 12.5A VDS = 24V VDS = 15V 16 3000 C, Capacitance (pF) Ciss 2000 12 8 Coss 1000 4 Crss 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) TJ = 25 C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 I D , Drain Current (A) TJ = 150 C 100 100us 10 10 1ms 1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 5.0 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com SI4420DY 14 12 80 100 I D , Drain Current (A) 10 P ower ( W ) 8 6 60 40 4 20 2 0 25 50 75 100 125 150 0 0.01 A 0.1 1 10 100 TC , Case Temperature ( C) T im e (sec ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1 t2 0.01 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 SI4420DY R D S(on ) , D rain-to-S ource O n Resistance () R DS(on) , Drain-to -Source On Resistance ( ) 0.20 0.012 0.16 0.010 0.12 ID = 12.5A 0.008 0.08 V G S = 10V V G S = 4.5V 0.04 0.00 0 10 20 30 40 50 0.006 4.0 5.0 6.0 7.0 8.0 9.0 10.0 A I D , D rain C urren t (A ) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Drain Current Fig 13. Typical On-Resistance Vs. Gate Voltage 3.0 1000 EAS , Single Pulse Avalanche Energy (mJ) TOP 800 VGS(th) , Variace (V) 2.5 BOTTOM ID 4.0A 7.1A 8.9A ID = 250A 2.0 600 400 1.5 200 1.0 -60 -20 20 60 100 140 180 0 25 50 75 100 125 150 TJ , Temperature (C) Starting TJ , Junction Temperature ( C) Fig 14. Typical Threshold Voltage Vs.Temperature Fig 15. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com SI4420DY SO-8 Package Outline SO-8 Part Marking Information www.irf.com 7 SI4420DY SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 1/2000 8 www.irf.com |
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