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| BB833 Silicon Tuning Diode 2 Extended frequency range up to 2.5 GHz; special design for use in TV-sat indoor units High capacitance ratio 1 VPS05176 Type BB833 Marking white X Pin Configuration 1=C 2=A Package SOD323 Maximum Ratings Parameter Diode reverse voltage Forward current Storage temperature Peak reverse voltage (R 5k) Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ... 150 -55 ... 150 mA C Unit V Operating temperature range 1 Jun-22-2001 BB833 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Series inductance Ls Capacitance matching CT1 /CT28 CT/CT CT Symbol min. IR IR - Values typ. max. 20 500 Unit nA pF 8.5 0.6 11 9.3 0.75 12.4 1.8 1.8 10 0.9 3 % 1) In-line matching. For details please refer to Application Note 047 2 Jun-22-2001 nH rs BB833 Diode capacitance CT = f (VR) f = 1MHz BB 833 EHD07121 Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 12 CT pF 10 1/C TCc 10 -4 10 -5 -1 10 8 6 4 2 0 10 0 10 1 V VR 10 2 10 0 10 1 V 10 2 VR 3 Jun-22-2001 |
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