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| PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features * Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard TO-247AC package C Standard Speed IGBT VCES =1200V G E VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche EnergyS Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 57 33 114 114 20 270 200 80 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6.0 (0.21) Max. 0.64 --- 40 --- Units C/W g (oz) www.irf.com 1 7/7/2000 IRG4PH50S Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 -- Emitter-to-Collector Breakdown Voltage T 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 1.22 -- 1.47 Collector-to-Emitter Saturation Voltage -- 1.75 VCE(ON) -- 1.55 VGE(th) Gate Threshold Voltage 3.0 -- DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance U 27 40 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0 A -- V/C VGE = 0V, IC = 2.0 mA 1.7 IC = 33A VGE = 15V -- IC = 57A See Fig.2, 5 V -- IC = 33A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 33A 250 VGE = 0V, VCE = 1200V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 1200V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Q gc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 167 25 55 32 29 845 425 1.80 19.6 21.4 32 30 1170 1000 37 13 3600 160 30 Max. Units Conditions 251 IC = 33A 38 nC VCC = 400V See Fig. 8 83 VGE = 15V -- -- TJ = 25C ns 1268 IC = 33A, VCC = 960V 638 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 14 44 -- TJ = 150C, -- IC = 33A, VCC = 960V ns -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 10,11,14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PH50S For both: Triangular wave: 60 L oad C urre nt (A ) Duty cycle: 50% T J = 125C T sink = 90C Gate drive as specified Power Dissipation = 40W Clamp voltage: 80% of rated 40 Square wave: 60% of rated voltage 20 Ideal diodes 0 0.1 1 10 A f, F reque ncy (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) TJ = 25 C 100 TJ = 150 C I C , Collector-to-Emitter Current (A) 100 TJ = 150 C 10 10 TJ = 25 C 1 0.0 V = 15V 80s PULSE WIDTH GE 1.0 2.0 3.0 4.0 5.0 1 5 6 7 8 V = 50V 5s PULSE WIDTH CC 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH50S 60 2.5 50 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) I C = 66 A 2.0 40 30 I C = 33 A 1.5 20 10 I C =16.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH50S 7000 6000 Cies VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 33A C, Capacitance (pF) 5000 15 4000 C oes C res 10 3000 2000 5 1000 0 1 10 100 0 0 25 50 75 100 125 150 175 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 25.0 Total Switching Losses (mJ) 24.0 Total Switching Losses (mJ) V CC = 960V V GE = 15V TJ = 25 C I C = 33A 1000 5 RG = 15 5Ohm VGE = 15V VCC = 960V 100 IC = 66 A IC = 33 A IC = 16.5 A 23.0 10 22.0 21.0 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ) RG , Gate Resistance ( (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH50S 120 Total Switching Losses (mJ) RG TJ VCC 100 VGE 80 60 40 I C , Collector Current (A) 30 40 50 60 70 = 5 5Ohm = 150 C = 960V = 15V 1000 VGE = 20V T J = 125 oC 100 10 20 0 0 10 20 SAFE OPERATING AREA 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 6 www.irf.com IRG4PH50S L 50V 1 00 0V VC * 0-960V D .U .T. RL = 960V 4X IC@25C 480F 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = ----V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveforms www.irf.com 7 IRG4PH50S Case Outline and Dimensions -- TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 14 .80 (.583 ) 14 .20 (.559 ) 4.30 (.1 70) 3.70 (.1 45) 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5.45 (.2 15 ) L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M C AS 2X 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00 8 www.irf.com |
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