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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PBSS4140DPN 40 V low VCEsat NPN/PNP transistor
Product specification 2001 Dec 13
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
FEATURES * 600 mW total power dissipation * Low collector-emitter saturation voltage * High current capability * Improved device reliability due to reduced heat generation * Replaces two SOT23 packaged low VCEsat transistors on same PCB area * Reduces required PCB area * Reduced pick and place costs. APPLICATIONS * General purpose switching and muting * LCD backlighting * Supply line switching circuits * Battery driven equipment (mobile phones, video cameras and hand-held devices).
6 handbook, halfpage 5 4
PBSS4140DPN
QUICK REFERENCE DATA SYMBOL VCEO IC ICM TR1 TR2 RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX. 40 1 2 - - <500 UNIT V A A - - m
6
5
4
DESCRIPTION
TR2
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package.
1 2 3
MAM445
TR1
1
2
3
MARKING TYPE NUMBER PBSS4140DPN MARKING CODE M2 Fig.1
Top view
Simplified outline SC74 (SOT457) and symbol.
2001 Dec 13
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 C; note 1 - -65 - -65 Tamb 25 C; note 1 -
PBSS4140DPN
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 208 UNIT K/W total power dissipation 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 40 40 5 1 2 1 370 +150 150 +150 V V V A A A mW C C C
2001 Dec 13
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - - 300 - - - 300 200 - - - 150 - 300 250 160 - - - 150 -
PBSS4140DPN
TYP. - - - - - - - - - - - - 260 - - - - - - - 300 - -
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICBO ICEO IEBO hFE VCEsat collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tj = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA NPN transistor hFE VBEsat VBEon RCEsat fT Cc hFE DC current gain base-emitter saturation voltage base-emitter turn-on voltage equivalent on-resistance transition frequency collector capacitance VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 500 mA; IB = 50 mA; note 1 VCE =10 V; IC = 50 mA; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VBEsat VBEon RCEsat fT Cc Note 1. Pulse test: tp 300 s; 0.02. base-emitter saturation voltage base-emitter turn-on voltage equivalent on-resistance transition frequency collector capacitance IC = -1 A; IB = -50 mA VCE = -5 V; IC = -1 A IC = -500 mA; IB -50 mA; note 1 VCE = -10 V; IC = -50 mA; f = 100 MHz VCB = -10 V; IE = Ie = 0; f =1 MHz 900 - 1.2 1.1 <500 - 10 V V m MHz pF 100 50 100 100 - 200 250 500 mV mV mV nA A nA nA
PNP transistor DC current gain 800 - - -1.1 -1.0 <500 - 12 V V m MHz pF
2001 Dec 13
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
handbook, halfpage
1000
MLD642
handbook, halfpage
10
MLD635
hFE 800
(1)
VBE (V)
600
(2)
1 400
(1) (2) (3)
(3)
200
0 10-1
1
10
102
103 104 IC (mA)
10-1 10-1
1
10
102
103 104 IC (mA)
TR1 (NPN); VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
TR1 (NPN); VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV)
(1)
MLD636
102 handbook, halfpage RCEsat ()
MHC126
102
10
(2)
(3)
10
1
(1) (2) (3)
1
1
10
102
103
IC (mA)
104
10-1 10-1
1
10
102
103 104 IC (mA)
TR1 (NPN); IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
TR1 (NPN); IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of collector current; typical values.
2001 Dec 13
5
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
handbook, halfpage
400
MLD637
fT (MHz) 300
200
100
0 0 200 400 600 1000 800 IC (mA)
TR1 (NPN); VCE = 10 V.
Fig.6
Transition frequency as a function of collector current; typical values.
2001 Dec 13
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
handbook, halfpage
1200
MLD638
handbook, halfpage
-10
MLD639
hFE VBE 800
(1)
(V)
-1
(2)
(1) (2) (3)
400
(3)
0 10-1
-1
-10
-102
-103
-104
IC (mA) TR2 (PNP); VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
-10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
TR2 (PNP); VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.7
DC current gain as a function of collector current; typical values.
Fig.8
Base-emitter voltage as a function of collector current; typical values.
-103 handbook, halfpage VCEsat (mV) -102
(1)
MLD640
102 handbook, halfpage RCEsat ()
MHC127
10
(3) (2)
-10
1
(1)
(2) (3)
-1 -1
-10
-102
-103
IC (mA)
-104
10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
TR2 (PNP); IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
TR2 (PNP); IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.9
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.10 Equivalent on-resistance as a function of collector current; typical values.
2001 Dec 13
7
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
handbook, halfpage
300
MLD641
fT (MHz) 200
100
0 0
-200
-400
-600
-800 IC (mA)
-1000
TR2 (PNP); VCE = -10 V.
Fig.11 Transition frequency as a function of collector current; typical values.
2001 Dec 13
8
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PBSS4140DPN
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2001 Dec 13
9
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
PBSS4140DPN
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Dec 13
10
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
NOTES
PBSS4140DPN
2001 Dec 13
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2001
Dec 13
Document order number:
9397 750 09062

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