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Datasheet File OCR Text: |
Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 20.00.5 Unit: mm 3.30.2 5.00.3 3.0 6.0 s Features q q q q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25C) Ratings -160 -160 -5 -20 -12 120 3.5 150 -55 to +150 Unit V V V A 26.00.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.00.5 2.5 2.00.3 3.00.3 1.00.2 2.70.3 0.60.2 5.450.3 10.90.5 1 2 3 A W C C 1:Base 2:Collector 3:Emitter TOP-3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = -160V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -1A VCE = -5V, IC = -8A VCE = -5V, IC = -8A IC = -8A, IB = - 0.8A VCE = -5V, IC = - 0.5A, f = 1MHz VCB = -10V, IE = 0, f = 1MHz 15 400 20 60 20 -1.8 -2.0 V V MHz pF 200 min typ max -50 -50 Unit A A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 2.0 1.5 3.0 1 Power Transistors PC -- Ta 200 -24 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) 2SB1347 IC -- VCE -24 VCE=-5V -20 IC -- VBE Collector power dissipation PC (W) -20 Collector current IC (A) 150 -800mA -16 -600mA -400mA -12 -200mA -8 -100mA -50mA Collector current IC (A) IB=-1000mA -16 25C TC=-25C -12 100C 100 (1) -8 50 -4 (3) 0 0 20 40 60 80 100 120 140 160 (2) 0 0 -2 -4 -6 -4 0 -8 -10 -12 0 -1 -2 -3 -4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 25C -3 -1 TC=100C -25C 1000 hFE -- IC VCE=-5V 1000 fT -- IC VCE=-5V f=1MHz TC=25C Forward current transfer ratio hFE 300 TC=100C 100 -25C 30 25C Transition frequency fT (MHz) -10 -30 -100 300 100 30 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 10 10 3 3 -1 -3 -10 -30 -100 1 - 0.1 - 0.3 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 Area of safe operation (ASO) -100 IE=0 f=1MHz TC=25C -30 Non repetitive pulse TC=25C ICP t=10ms IC 100ms -3 DC -1 Collector output capacitance Cob (pF) 3000 Collector current IC (A) -3 -10 -30 -100 -10 1000 300 100 - 0.3 - 0.1 - 0.03 30 10 -1 - 0.01 -1 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1347 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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