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| Datasheet File OCR Text: |
| BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: * PG = 13 dB Typical at 175 MHz * 30:1 Load VSWR Capability * OmnigoldTM metalization system PACKAGE STYLE .380 4L FLG MAXIMUM RATINGS ID VDS VGS PDISS TJ TSTG JC 6.0 A 65 V 20 V 68 W @ TC = 25 C -65 C to +150 C -65 C to +200 C 1.8 C/W 1 = DRAIN 2 = GATE 3&4 = SOURCE CHARACTERISTICS SYMBOL BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG D ID = 10 mA VDS = 28 V VDS = 0 V VDS = 10 V VDS = 10 V VDS = 28 V VDS = 28 V NONE TC = 25 C TEST CONDITIONS VGS = 0 V VGS = 20 V ID = 10 mA ID = 1.5 A VGS = 0 V IDQ = 25 mA f = 1.0 MHz Pout = 30 W f = 150 MHz MINIMUM 65 TYPICAL MAXIMUM 2.0 1.0 UNITS V mA A V S pF dB % 2.0 1.2 1.9 125 75 7.0 13 50 16 60 4.5 VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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