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PD - 9.1617B
PRELIMINARY
l l l l l l
IRF3315S/L
HEXFET(R) Power MOSFET
D
Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 150V
G S
RDS(on) = 0.082 ID = 21A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3315L) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
21 15 84 3.8 94 0.63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
--- ---
Max.
1.6 40
Units
C/W
11/19/97
IRF3315S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 150 --- --- 2.0 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.187 --- --- --- --- --- --- --- --- --- --- 9.6 32 49 38 7.5 1300 300 160 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.082 VGS = 10V, ID = 12A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 12A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 95 ID = 12A 11 nC VDS = 120V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 21 showing the A G integral reverse --- --- 84 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 12A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 12A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Uses IRF3315 data and test conditions
VDD = 25V, starting TJ = 25C, L = 4.9 mH
RG = 25, IAS = 12A. (See Figure 12)
TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 12A, di/dt 140A/s, VDD V(BR)DSS,
IRF3315S/L
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
4.5V
10
4.5V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100 1 0.1 1
20s PULSE WIDTH TJ = 175 C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 175 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 21A
2.5
2.0
10
1.5
1.0
0.5
1 4 5 6 7
V DS = 50V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF3315S/L
3000
2500
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 12 A
16
VDS = 120V VDS = 75V VDS = 30V
C, Capacitance (pF)
2000
C iss
12
1500
C oss
1000
8
Crss
500
4
0 1 10 100
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80 100
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 25 C TJ = 175 C
I D , Drain Current (A)
100 10us
100us 10 1ms
1
0.1 0.2
V GS = 0 V
0.5 0.8 1.1 1.4
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100
10ms 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF3315S/L
25
V DS VGS
RD
20
D.U.T.
+
I D , Drain Current (A)
RG
-V DD
15
10V
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.1
0.05 0.02 0.01
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF3315S/L
1000
15 V
EAS , Single Pulse Avalanche Energy (mJ)
TOP
800
BOTTOM
ID 4.9A 8.5A 12A
VD S
L
D R IV E R
600
RG
20V
D .U .T
IA S tp
+ - VD D
A
0 .0 1
400
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
200
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRF3315S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRF3315S/L
D2Pak Package Outline
10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2
4.69 (.185) 4.20 (.165)
-B1.32 (.052) 1.22 (.048)
10.16 (.400) REF.
6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF.
1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 5.08 (.200 )
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM
0.55 (.022) 0.46 (.018)
1 .39 (.055) 1 .14 (.045)
M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50)
N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
Part Marking Information
D2Pak
IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE
PART NUMBER F530S 9246 9B 1M
A
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
IRF3315S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRF3315S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L
1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D IR E C T IO N
1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 )
2 7.4 0 (1 .07 9) 2 3.9 0 (.9 41 ) 4
330.00 (14.173) M A X.
6 0.0 0 (2 .3 6 2) M IN .
N O TES : 1. C O M F O R M S T O E IA -41 8 . 2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
26 .40 (1.039) 24 .40 (.961) 3
3 0.4 0 (1 .1 97 ) MAX. 4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97

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