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| PD - 94337B HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-2) IRF7NA2907 75V, N-CHANNEL Product Summary Part Number IRF7NA2907 BVDSS 75V RDS(on) ID 0.0045 75A* Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-2 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 75* 75* 300 250 2.0 20 500 75 25 6.4 -55 to 150 300 (for 5s) 3.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 02/18/02 IRF7NA2907 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 75 -- -- 2.0 130 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.08 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.0045 4.0 -- 20 250 100 -100 375 60 150 40 125 175 75 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 75A VDS = VGS, ID = 250A VDS =15V, IDS = 75A VDS = 75V ,VGS=0V VDS = 60V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 45A VDS = 60V VDD = 38V, ID = 45A, VGS = 10V, RG = 1.2 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 12000 2280 610 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 75* 300 0.95 175 850 Test Conditions A V ns nC Tj = 25C, IS = 75A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 0.5 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRF7NA2907 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 100 4.5V 100 10 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 10 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A I D , Drain-to-Source Current (A) 2.0 TJ = 150 C 1.5 100 TJ = 25 C 1.0 0.5 10 4.5 15 V DS = 25V 20s PULSE WIDTH 5.5 5.0 6.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7NA2907 20000 VGS , Gate-to-Source Voltage (V) 16000 VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 45A 16 VDS = 60V C, Capacitance (pF) Ciss 12000 12 8000 8 C oss 4000 C rss 4 0 1 10 100 0 0 100 200 FOR TEST CIRCUIT SEE FIGURE 13 300 400 500 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 C 10 ID, Drain-to-Source Current (A) 100 100s 1ms 10 Tc = 25C Tj = 150C Single Pulse 1 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) TJ = 25 C 1 10ms 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7NA2907 200 LIMITED BY PACKAGE 150 V DS VGS RG RD D.U.T. + I D , Drain Current (A) -V DD VGS Pulse Width 1 s Duty Factor 0.1 % 100 50 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7NA2907 1000 EAS , Single Pulse Avalanche Energy (mJ) 15V 800 ID 33.5A 47.4A BOTTOM 75A TOP VDS L D R IV E R 600 RG VV 2 0GS D .U .T IA S tp + V - DD A 400 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F 10 V QGS VG QGD D.U.T. VGS 3mA + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF7NA2907 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.17mH Peak IAS = 75A, VGS = 10V, RG= 25 ISD 45A, di/dt 260A/s, VDD 75V, TJ 150C Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions -- SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 www.irf.com 7 |
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