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NJG1551F 800MHz BAND MIXER GaAs MMIC nGENERAL DESCRIPTION NJG1551F is a mixer GaAs MMIC featured low distortion, high conversion gain and low noise figure. NJG1551F includes a mixer and a local amplifier, and ideally suitable for 800MHz band digital mobile phone handsets. The very small MTP package is adopted. nPACKAGE OUTLINE NJG1551F nFEATURES lLow voltage operation lHigh conversion gain lHigh IP3 lLow noise figure lPackage +2.7V 13dB typ. @fRF=820MHz, PLO=-10dBm, PRF=-30dBm OIP3=12dBm typ. @fRF1 =820.0MHz, fRF2 =820.1MHz PLO=-10dBm, PRF=-30dBm IIP3=-1dBm typ. @fRF1 =820.0MHz, fRF2 =820.1MHz PLO=-10dBm, PRF=-30dBm 5dB typ. @fRF=820MHz, PLO=-10dBm MTP6 (Mount Size: 2.8x2.9x1.2mm) nPIN CONFIGURATION F Type (Top View) 1 6 Pin Connection 1. IFOUT 2. BPC 3. VLO 4. LOIN 5. GND 6. RFIN 2 5 3 4 NOTE :The portion above shows orientation mark printed on the package surface. -1- NJG1551F nABSOLUTE MAXIMUM RATINGS (Ta=25C, Zs=Zl =50) PARAMETERS Mixer Supply Voltage Local Amplifier Supply Voltage Mixer RF Input Power Mixer LO Input Power Power Dissipation Operating Temp. Storage Temp. SYMBOL VMIX VLO PRFIN PLOIN PD Topr Tstg VMIX=2.7V, VLO=2.7V VMIX=2.7V, VLO=2.7V CONDITIONS RATINGS 5 5 10 10 150 -30~+85 -40~+150 UNITS V V dBm dBm mW C C nRECOMMENDED OPERATING RANGE PARAMETER Mixer Supply Voltage Local Amplifier Supply Voltage SYMBOL VMIX VLO MIN 2.5 2.5 TYP 2.7 2.7 MAX 4.5 4.5 UNITS V V nELECTRICAL CHARACTERISTICS (Ta=25C, VMIX=2.7V, VLO=2.7V, fIF=130MHz, PLO=-10dBm) PARAMETERS Mixer Current Local Amplifier Current Conversion Gain Input 3rd Order Intercept Point Noise Figure SYMBOL IMIX ILO GC IIP3 NF CONDITIONS PRF=OFF, PLO=OFF PRF=OFF, PLO=OFF fRF=820MHz, PRF=-30dBm fLO=690MHz fRF=820.0MHz+820.1MHz fLO=690MHz fRF=820MHz fLO=690MHz MIN 9.5 TYP 5.0 2.0 13.0 -1.0 5.0 MAX 7.0 3.2 6.0 UNITS mA mA dB dBm dB -2- NJG1551F nTYPICAL CHARACTERISTICS (Application 1, fLO=690MHz) 16 14 Conversion Gain , Noise Figure vs. LO Power Gc IF , IM3 , IM5 vs. RF Power 16 14 20 Conversion Gain (dB) 0 Noise Figure (dB) 12 10 8 6 4 2 -40 12 10 8 IF , IM3 , IM5 (dBm) IF -20 -40 NF 6 4 2 IM3 -60 IM5 -30 -20 -10 0 10 -80 -40 -35 -30 -25 -20 -15 -10 -5 0 LO Power (dBm) Condition f IF=130MHz f RF=820MHz, PRF=-30dBm f LO=690MHz V MIX=V LO=2.7V RF Power (dBm) Condition f IF=130MHz f RF1=820.0MHz f RF2=820.1MHz f LO=690MHz, PLO=-10dBm V MIX=V LO=2.7V Input-IP3 vs. LO Power 2 Conversion Gain , Noise Figure , Input-IP3 vs. V ,V 17 16 MIX LO 6 NF 5 4 3 Conversion Gain (dB) IIP3 IIP3 (dBm) -2 15 14 Gc 13 12 11 10 2 -4 IIP3 1 0 -1 -2 -6 -8 -40 -30 -20 -10 0 10 LO Power (dBm) Condition f IF=130MHz f RF1=820.0MHz, PRF=-30dBm f RF2=820.1MHz f LO=690MHz V MIX=V LO=2.7V 3IF-IM3 IIP3= -Gc 2 @PRF=-27dBm 9 1.5 2 2.5 3 3.5 4 4.5 5 V MIX ,V LO (V) Condition f IF=130MHz f RF1=820.0MHz, PRF=-30dBm f RF2=820.1MHz f LO=690MHz, PLO=-10dBm 3IF-IM3 IIP3= -Gc 2 @PRF=-27dBm -3- NF (dB) , IIP3 (dBm) 0 NJG1551F nTYPICAL CHARACTERISTICS (Continued) Conversion Gain , Noise Figure vs. Temperature 16 8 3 2 Input-IP3 vs. Temperature 7 15 Conversion Gain (dB) Gc NF Noise Figure (dB) 1 IIP3 (dBm) 14 13 6 5 0 -1 -2 -3 -4 -50 IIP3 12 4 11 3 10 -50 0 50 o 2 100 0 50 o 100 Temperature ( C) Condition f IF=130MHz f RF=820MHz, PRF=-30dBm f LO=690MHz, PLO=-10dBm V MIX=V LO=2.7V Temperature ( C) Condition f IF=130MHz f RF1=820.0MHz, PRF=-30dBm 3IF-IM3 IIP3= -Gc f RF2=820.1MHz 2 f LO=690MHz, PLO=-10dBm @PRF=-27dBm V MIX=V LO=2.7V Condition f IF=130MHz f RF=820MHz,PRF=-30dBm f LO=690MHz V MIX=V LO=2.7V Condition f IF=130MHz f RF=820MHz f LO=690MHz V MIX=V LO=2.7V -4- NJG1551F nTYPICAL CHARACTERISTICS (Continued) I 6 MIX ,I MIX LO vs. LO Power 6 I MIX ,I I LO vs. Temperature I 5 MIX 5 (mA) 4 (mA) ,I LO LO 4 ,I LO MIX I I 2 MIX 3 3 I I 2 LO 1 -40 -30 -20 -10 0 10 1 -50 0 50 o 100 LO Power (dBm) Condition f RF=820MHz, PRF=-30dBm f LO=690MHz V MIX=V LO=2.7V Temperature ( C) Condition PRF=OFF PLO=OFF V MIX=V LO=2.7V nTYPICAL CHARACTERISTICS (Application 1, fLO=720MHz) 16 Conversion Gain , Noise Figure vs. RF Frequency 8 Conversion Gain (dB) 15 7 Gc 14 6 13 5 NF 12 4 11 800 820 840 860 880 3 900 RF Frequency (MHz) Condition f IF=130MHz PRF=-30dBm PLO=-10dBm V MIX=V LO=2.7V Lower LOCAL Noise Figure (dB) -5- NJG1551F nTYPICAL CHARACTERISTICS (Application 1, fLO=690MHz) RFIN PORT EXTERNAL MATCHING NETWORK IMPEDANCE PLOT LOIN PORT EXTERNAL MATCHING NETWORK IMPEDANCE PLOT -6- NJG1551F nTYPICAL CHARACTERISTICS (Continued) IFOUT PORT EXTERNAL MATCHING NETWORK IMPEDANCE PLOT -7- NJG1551F nTYPICAL CHARACTERISTICS (Application 2, fLO=796.12MHz) 16 14 Conversion Gain , Noise Figure vs. LO Power IF , IM3 vs. RF Power 16 14 20 Conversion Gain (dB) Noise Figure (dB) IF , IM3 (dBm) 12 10 8 6 4 2 -40 Gc 0 12 10 8 IF -20 -40 NF 6 4 2 -60 IM3 -30 -20 -10 0 10 -80 -40 -35 -30 -25 -20 -15 -10 -5 0 LO Power (dBm) Condition f IF=85.38MHz f RF=881.5MHz, PRF=-30dBm f LO=796.12MHz V MIX=V LO=2.7V RF Power (dBm) Condition f IF=85.38MHz f RF1=881.5MHz f RF2=881.6MHz f LO=796.12MHz,PLO=-10dBm V MIX=V LO=2.7V nTYPICAL CHARACTERISTICS (Application 2, fLO=980MHz) 14 Conversion Gain , Noise Figure vs. RF Frequency Gc 9 IF , IM3 vs. RF Power 20 13 8 Conversion Gain (dB) 0 Noise Figure (dB) IF , IM3 (dBm) 12 11 7 6 IF -20 NF -40 10 5 9 4 -60 IM3 8 800 820 840 860 880 3 900 -80 -40 -35 -30 -25 -20 -15 -10 -5 0 RF Frequency (MHz) Condition f IF=130MHz PRF=-30dBm PLO=-10dBm V MIX=V LO=2.7V RF Power (dBm) Condition f IF=130MHz f RF1=850.0MHz f RF2=850.1MHz f LO=980MHz,PLO=-10dBm V MIX=V LO=2.7V -8- NJG1551F nAPPLICATION CIRCUIT 1 (Application 1) VLO Zo=50 LO VLO C1 R1 L4 LOIN 4 L3 3 C4 C5 GND 5 Zo=50 RF L2 IFOUT L1 L5 C3 L6 C6 Zo=50 IF RFIN 6 1 BPC 2 C2 VMIX C7 C8 C9 PARTS LIST Lower LOCAL fLO=690MHz fIF=130MHz L1 L2 L3 L4 L5 L6 C1 C2 C3 C4 C5 C6 C7 C8 C9 R1 39nH 27nH 22nH 33nH 82nH 56nH 1pF 470pF 11pF 100pF 1000pF 1000pF 10pF 100pF 1000pF 120 800MHz BAND Lower LOCAL fLO=720MHz fIF=130MHz 33nH 27nH 18nH 33nH 82nH 56nH 1pF 470pF 11pF 100pF 1000pF 1000pF 10pF 100pF 1000pF 120 TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) TAMA Electronics (CRG16G) PART ID COMMENT -9- NJG1551F nAPPLICATION CIRCUIT 2 (Application 2) VLO Zo=50 LO VLO L3 R1 L4 LOIN 4 3 C3 C4 GND 5 Zo=50 RF L2 IFOUT L1 L5 C2 L6 C5 Zo=50 IF RFIN 6 1 BPC 2 C1 VMIX C6 C7 C8 PARTS LIST 800MHz BAND Lower LOCAL Upper LOCAL PART ID L1 L2 L3 L4 L5 L6 C1 C2 C3 C4 C5 C6 C7 C8 R1 fLO=796.12MHz fIF=85.38MHz 39nH 22nH 27nH 27nH 100nH 47nH 470pF 24pF 100pF 1000pF 1000pF 10pF 100pF 1000pF 100 fLO=980MHz fIF=130MHz 33nH 27nH 18nH 22nH 82nH 56nH 470pF 11pF 100pF 1000pF 1000pF 10pF 100pF 1000pF 100 COMMENT TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) TAIYO-YUDEN (HK1608) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) MURATA (GRM39) TAMA Electronics (CRG16G) - 10 - NJG1551F nRECOMMENDED PCB DESIGN (TOP VIEW) IFOUT VLO C5 C4 L4 C2 C6 L6 C9 L5 C8 C7 R1 C3 VMIX LOIN NJG1551F C1 L3 1 L1 L2 RFIN PCB: FR-4, t=0.5mm STRIPLINE WIDTH=1mm (Zo=50) (SIZE: 22.5mmx30mm) PRECAUTIONS [1] Please locate L4 and R1 close to VLO terminal (3). [2] Distance from L1 and RFIN terminal (6) is 3.5mm. [3] Distance from C1 and LOIN terminal (4) is 3.5mm. [4] Please locate C2close to BPC terminal (2). [5] Please locate C7, C8 and C9 close to C3, L6. [6] Please locate C4, C5 close to L4. - 11 - NJG1551F nMEASURING BLOCK DIAGRAM VDD=2.7V VMIX SG (LOCAL) LOIN D.U.T. PCB RFIN VLO IFOUT Spectrum Analyzer SG (RF) Conversion Gain Measurement Block Diagram VDD=2.7V BPF SG (LOCAL) VMIX LOIN VLO D.U.T. PCB RFIN Noise Source IFOUT NF Meter BPF Noise Figure Measurement Block Diagram Vdd=2.7V VMIX SG (LOCAL) LOIN D.U.T. PCB RFIN VLO IFOUT Spectrum Analyzer SG (RF1) Power Comb . ATT SG (RF2) IF, IM3, IM5 Measurement Block Diagram - 12 - NJG1551F nPACKAGE OUTLINE (MTP6) Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm : 14mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle w ith care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 13 - |
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