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Bulletin I25198 rev. B 02/00
ST2100C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Double side cooling High surge capability High mean current Fatigue free
2090A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz VDRM /VRRM tq TJ typical max.
(R-PUK)
Units
A C A C A C A A KA2s KA2s V s C
ST2100C..R
1770 80 2090 55 3850 25 36250 38000 6570 5990 3000 to 4200 500 125
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1
ST2100C..R Series
Bulletin I25198 rev. B 02/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code
30 32 ST2100C..R 34 36 38 40 42
V DRM/V RRM, max. repetitive peak and off-state voltage V
3000 3200 3400 3600 3800 4000 4200
VRSM , maximum nonrepetitive peak voltage V
3100 3300 3500 3700 3900 4100 4300
I DRM /IRRM max.
@ TC = 125C
mA
250
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature IT(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST2100C..R
1770 (1150) 80 2090 (940) 55 (85) 3850 36250 38000 29000 30350
Units
A C A C A
Conditions
180 conduction, half sine wave double side (single side [anode side]) cooled
DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 50% VRRM reapplied No voltage reapplied 50% VRRM reapplied Sinusoidal half wave, Initial TC = 125C t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms TJ = TJ max. T J = TJ max. I = 2900A, TC = 25C
pk
A
I 2t
Maximum I2t for fusing
6570 5990 4205 3820 KA s
2
V T(TO) Max. value of threshold voltage rt V TM IL Max. value of on-state slope resistance Max. on-state voltage Typical latching current
1.03 0.32 1.875 300
V m V mA
T J = 25C, VD = 5V
Switching
Parameter
di/dt Max. repetitive 50Hz (no repetitive) rate of rise of turned-on current t Maximum delay time 150 (300) 2.5 s t
q
ST2100C..R
Units Conditions
A/s From 67% VDRM to 1000A gate drive 20V, 10, tr = 0.5s TJ = TJ max. Gate drive 30V, 15, Vd = 67% VDRM, T J = 25C Rise time 0.5s IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
d
Typical turn-off time
500
dIRR/dt = 2A/s, VDR = 67% VDRM, dVDR/dt = 8V/s linear
2
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Blocking
Parameter
dv/dt IRRM IDRM Maximum linear rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST2100C..R
500 250
Units
V/s mA
Conditions
TJ = TJ max. to 67% rated VDRM TJ = 125C rated VDRM /V RRM applied
Triggering
Parameter
PGM PG(AV) IGM VGM -V GM IGT VGT Maximum peak gate power Maximum average gate power Max. peak positive gate current Max. peak positive gate voltage Max. peak negative gate voltage Maximum DC gate current required to trigger Maximum gate voltage required to trigger
ST2100C..R
150 10 30 30 0.25 400
Units
W A V V mA
Conditions
t = 100s
p
Anode positive with respect to cathode Anode positive with respect to cathode Anode positive with respect to cathode TC = 25C, VDRM = 5V TC = 25C, VDRM = 5V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied
4
V
VGD
DC gate voltage not to trigger
0.25
V
TC = 125C
Thermal and Mechanical Specification
Parameter
TJ max. Max. operating temperature Tstg RthJ-C Max. storage temperature range Thermal resistance, junction to case Rth(C-h) Thermal resistance, case to heatsink F wt Mounting force 10% Approximate weight Case style
ST2100C..R
125 -55 to 125 0.019 0.0095 0.004 0.002 43000 (4400) 1600 (R-PUK)
Units
C K/W K/W N (Kg) g
Conditions
On-state (conducting)
DC operation single side cooled DC operation double side cooled Single side cooled Double side cooled Clamping force 43KN with mounting compound
See Outline Table
RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
180 120 60
Single side
0.0010 0.0017 0.0044
Double side
0.0010 0.0017 0.0044
Units
K/W
Conditions
TJ = TJ max.
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Ordering Information Table
Device Code
ST 210
1 1 2 3 4 5 6 7 Thyristor Essential part number 0 = Converter grade C = Ceramic Puk 2
0
3
C
4
42
5
R
6
1
7 8
Voltage code: Code x 100 = VRRM (See Voltage Rating Table) R = Puk Case 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX. 73.2 (2.9) DIA. MAX. TWO PLACES 3 7.7 (1 .5 ) M A X. GATE 1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06) DIA. MAX. 4.76 (0.2)
CATHODE
20 5
.2 (0 4)
6 .3
(R-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
3.7 (0.15) DIA. NOM. X 2.1 (0.1) DEEP MIN. BOTH ENDS
4
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Maximum Allowable Heatsink Temperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 0 500
Maximum Allowable Heatsink Temperature (C)
ST2100C..R Series (Single Side Cooled) R thJ-hs (DC) = 0.023 K/W
130 120 110 100 90 80 70 60 50 40 30 20 0
60
ST2100C..R Series (Double Side Cooled) R thJ-hs (DC) = 0.0115 K/W
Conduction Angle
Conduction Angle
120 180 DC
60 120 180 DC
1000
1500
2000
2500
1000
2000
3000
4000
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
8000 7000 6000 5000 4000 3000 2000 1000 0 0
DC 180 120 60
RMS Limit
Maximum Average On-state Current (A)
9000
10000
T = 125C J
1000
Conduction Angle
ST2100C..R Series T J = 125C
ST2100C..R Series
1000
2000
3000
4000
100 0.5
1
1.5
2
2.5
3
3.5
4
4.5
Average On-state Current (A)
Fig. 3- On-state Power Loss Characteristics
Average On-state Voltage (V)
Fig. 4- On-state VoltageDrop Characteristics
Peak Half Sine Wave On-state Current (A)
35000 30000 25000 20000 15000 10000 5000 1
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With 50% Rated V Applied Following Surge RRM Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
60000 55000 50000 45000 40000 35000 30000 25000 1
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125C 50% Rated V RRM Reapplied
ST2100C..R Series
ST2100C..R Series
10
100
10
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig.5 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 6 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
100000
Total Stroed Charge - Qrr (C)
T J = 125C
IT dIT dt t
tp = 3ms
I T= 2000A
Qrr IR (R C) ME
10000
ST2100C..R Series
1000 0.1
1
10
100
Rate Of Decay Of On-state Current - di/dt (A/s)
Fig. 7 - Stored Charged
Transient Thermal Impedance Z thJ-hs (K/W)
0.1
ST2100C..R Series
0.01
Steady State Value R thJ-C = 0.019 K/W (Single Side Cooled) R thJ-C = 0.0095 K/W (Double Side Cooled) (DC Operation)
0.001
0.0001 0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
Instantaneous Gate Voltage (V)
(1) PGM = 2W (2) PGM = 4W (3) PGM = 8W (4) PGM = 20W (5) PGM = 50W (6) PGM =100W (5) (6)
10
Tj=-40 C
Tj=25 C Tj=125 C
1
(1)
(2)
(3)
(4)
VGD IGD
Device: ST2100C..R Series
Frequency Limited by PG(AV)
0.1 0.001
0.01
0.1
1
10
Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics
6
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