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(R) STTA3006CW/CP TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 2 x 15A 600V A2 A1 K 35ns 1.6V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. A2 K A1 K A1 A2 TO-247 STTA3006CW SOT93 STTA3006CP DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "freewheel mode" operations and is particularly suitable and efficient in motor ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj Tstg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range tp = 5 s F = 5kHz square tp=10 ms sinusoidal Value 600 600 30 200 230 150 -65 to 150 Unit V V A A A C C control freewheel applications and in booster diode applications in power factor control circuitries. Packaged either in TO-247 or SOT93, these 600V devices are particularly intended for use on 240V domestic mains. Maximum operating junction temperature TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 Ed : 4B 1/8 STTA3006CW/CP THERMAL AND POWER DATA Symbol Rth(j-c) Parameter Junction to case Test conditions Per diode Total Coupling Per diode IF(AV) = 30A =0.5 Tc= 110C Per diode Tc=105C Value 1.9 1.0 0.1 20.5 Unit C/W P1 Conduction power dissipation W Pmax Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) 22.5 W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance Test conditions IF =15A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Min Typ 1.3 2 Max 1.8 1.6 100 5 1.06 177 Unit V V A mA V m Vto rd Test pulse : * tp = 380 s, < 2% ** tp = 5 ms, < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1A dIF/dt =-50A/s VR = 30V IF = 15A 12.5 17.5 IF = 15A 0.5 / Min Typ 35 65 A Max Unit ns IRM Tj = 125C VR = 400V Maximum reverse recovery dIF/dt = -120 A/s current dIF/dt = -500 A/s Softness factor Tj = 125C VR = 400V dIF/dt = -500 A/s S factor TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25C IF = 15A, dIF/dt = 120 A/s measured at, 1.1 x VFmax Tj = 25C IF = 15A, dIF/dt = 120 A/s Min Typ Max 500 V 9 Unit ns VFp 2/8 STTA3006CW/CP Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). VFM(V) = 0.1 = 0.2 = 0.5 P1(W) 25 20 =1 200 100 Tj=125C 15 10 T 10 5 IF(av) (A) 0 0 2 4 6 8 10 12 =tp/T tp IFM(A) 14 16 18 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. K 1.0 K= Zth(j-c) (tp, ) Rth(j-c) Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 45 40 35 30 VR=400V Tj =125 C IF=IF(av) IF=2*IF(av) 0.8 0.6 0.4 0.2 = 0.5 25 20 IF=0.5*IF(av) = 0.2 = 0.1 Single pulse T 15 10 5 0 0 100 200 300 tp(s) 1E-2 =tp/T tp dIF/dt(A/s) 400 500 600 700 800 900 1000 0.0 1E-4 1E-3 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 200 180 160 140 120 100 80 60 40 20 0 VR=400V Tj=125C IF=2*IF(av) IF=IF(av) Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). S factor 1.0 0.8 0.6 0.4 IF<2*IF(av) VR=400V Tj=125C IF=0.5*IF(av) dIF/dt(A/s) 0 100 200 300 400 500 600 700 800 900 1000 0.2 dIF/dt(A/s) 0.0 0 100 200 300 400 500 600 700 800 900 1000 3/8 STTA3006CW/CP Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 25 Tj=125C 1.1 1.0 S factor 20 IF=IF(av) 0.9 IRM 15 10 5 0.8 Tj(C) 0.7 25 50 75 100 125 0 0 100 200 300 dIF/dt(A/s) 400 500 600 700 800 900 1000 Fig. 9: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 300 250 200 150 100 VFR=1.1*VF max. IF=IF(av) Tj=125C dIF/dt(A/s) 50 0 100 200 300 400 500 600 700 800 900 1000 4/8 STTA3006CW/CP APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any "FREEWHEEL Mode" application (Fig.A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor Fig. A : "FREEWHEEL" MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR t T F = 1/T = t/T LOAD 5/8 STTA3006CW/CP APPLICATION DATA (Cont'd) Fig. B: STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 . IF(AV) + Rd . IF2(RMS) IF Rd VR V IR V tO VF Reverse losses : P2 = VR . IR . (1 - ) Fig. C: TURN-OFF CHARACTERISTICS V IL TRANSISTOR I t Turn-on losses : (in the transistor, due to the diode) P5 = VR x IRM 2 x ( 3 + 2 x S ) x F 6 x dIF dt VR x IRM x IL x ( S + 2 ) x F + 2 x dIF dt I dI F /dt V I RM ta tb t dI R /dt VR trr = ta + tb S = tb / ta DIODE Turn-off losses (in the diode) : P3 = VR x IRM 2 x S x F 6 x dIF dt P3 and P5 are suitable for power MOSFET and IGBT Fig. C: TURN-ON CHARACTERISTICS IF dI F /dt I Fmax 0 VF V Fp t Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F 1.1V F 0 tfr VF t 6/8 STTA3006CW/CP PACKAGE DATA TO-247 Plastic DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. V A D 4.85 2.20 0.40 1.00 3.00 2.00 2.00 3.00 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2.00 5 60 3.55 5.15 0.191 2.60 0.086 0.80 0.015 1.40 0.039 0.118 0.078 2.40 0.078 3.40 0.118 0.429 15.75 0.608 20.15 0.781 4.30 0.145 0.728 14.80 0.559 1.362 0.216 3.00 0.078 5 60 3.65 0.139 0.203 0.102 0.031 0.055 V Dia. E F F1 A H F2 F3 0.094 0.133 L5 F4 G L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 H L L1 L2 D 0.620 0.793 0.169 F1 L1 L3 L4 L5 M V V2 Dia. 0.582 0.118 0.143 Cooling method : by conduction (C). Recommended torque value : 0.8 m.N Maximum torque value : 1 m.N 7/8 STTA3006CW/CP PACKAGE DATA SOT93 Plastic DIMENSIONS REF. Millimeters Min. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O Cooling method : by conduction (C). Recommended torque value : 0.8 m.N Maximum torque value : 1 m.N Ordering type STTA3006CW STTA3006CP Marking STTA3006CW STTA3006CP Package TO247 SOT93 Weight 4.36g 3.97g Base qty 30 30 Delivery mode Tube Tube 4.00 3.95 31.00 4.10 0.157 18.0 4.15 0.156 1.220 0.161 10.80 14.70 0.50 1.10 1.75 2.10 11.10 0.425 15.20 0.279 12.20 16.20 0.709 0.163 4.70 1.90 2.50 2.00 0.78 0.020 1.30 0.043 0.069 0.083 0.437 0.598 0.480 0.638 Typ. Max. Min. 4.90 1.185 2.10 0.075 0.098 0.078 0.031 0.051 Inches Typ. Max. 0.193 0.083 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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