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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 0.2 FEATURES * Low On-Resistance 2SK2355: RDS(on) = 1.4 (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 (VGS = 10 V, ID = 2.5 A) 4 123 6.0 MAX. * Low Ciss Ciss = 670 pF TYP. * High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 1.3 0.2 0.75 0.1 2.54 0.5 0.2 2.8 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 1.5 MAX. 4 4.8 MAX. 1.3 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (2SK2355/2356) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (Ta = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 30 5.0 20 50 1.5 150 5.0 17.4 V V A A W C A mJ W 1.0 0.5 1.4 0.2 1.0 0.3 (2.54) (2.54) 123 1.1 0.2 3.0 0.5 8.5 0.2 R) .5 R) (0 0.8 ( 0.5 0.2 1. 2. 3. 4. Gate Drain Source Fin (Drain) -55 to +150 C MP-25Z (TO-220 SURFACE MOUNT TYPE) Drain 2.8 0.2 ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 Gate Body Diode Source The information in this document is subject to change without notice. Document No. TC-2500 (O. D. No. TC-8059) Date Published November 1994 P Printed in Japan (c) 1994 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 0.9 1.0 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 670 140 18 11 8 40 8 20 4.5 9 1.0 270 1.0 2.5 1.0 100 100 MAX. 1.4 1.5 3.5 V S UNIT m TEST CONDITIONS VGS = 10 V ID = 2.5 A 2SK2355 2SK2356 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.5 A VGS = 10 V VDD = 150 V RG = 10 RL = 60 ID = 5.0 A VDD = 400 V VGS = 10 V IF = 5.0 A, VGS = 0 IF = 5.0 A, VGS = 0 di/dt = 50 A/s A nA pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG VGS = 20 - 0 V 50 L VDD Test Circuit 2 Switching Time D.U.T. RL VGS VDD Wave Form VGS 10 % 0 VGS (on) 90 % PG. RG RG = 10 ID BVDSS IAS ID VDD t = 1 s Duty Cycle 1 % VDS VGS 0 t ID Wave Form 90 % 90 % 10 % 0 td (on) ton tr ID 10 % td (off) toff tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 70 60 50 40 30 20 10 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 60 40 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tc - Case Temperature - C Tc - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 Pulsed FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse) 10 d ite V) Lim 10 ) (on = S S RD t V G ID (DC) (a Po PW ID - Drain Current - A 10 10 0 s 0 ID - Drain Current - A = 1. 8 VGS = 20 V 10 V 8V 6V s s 6 1 m s 2SK2355 2SK2356 w 10 1.0 er m Di s 4 ss ipa tio n 0.1 1 TC = 25 C Single Pulse 10 Lim 2 ite d 1000 0 4 8 12 16 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 Pulsed VDS - Drain to Source Voltage - V 10 ID - Drain Current - A 1 0.1 0.05 0 5 Ta = -25 C 25 C 75 C 125 C 10 15 VGS - Gate to Source Voltage - V 3 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z rth(ch-c) (t) - Transient Thermal Resistance - C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 Rth(ch-a) = 83 C/W 10 1 Rth(ch-c) = 2.5 C/W 0.1 Tc = 25 C Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s IyfsI - Forward Transfer Admittance - S 100 Ta = -25 C 25 C 75 C 125 C RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed 10 2.0 ID = 5 A 2.5 A 1A 1.0 1.0 0.1 1.0 10 100 0 10 20 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed VGS(off) - Gate to Source Cutoff Voltage - V 3.0 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA RDS(on) - Drain to Source On-State Resistance - 4.0 2.0 3.0 2.0 1.0 1.0 0 0.01 0.1 1 ID - Drain Current - A 10 0 -50 0 50 100 150 Tch - Channel Temperature - C 4 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 ISD - Diode Forward Current - A 4.0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 10 3.0 ID = 4 A ID = 2 A VGS = 0 1.0 10 V 2.0 1.0 VGS = 10 V 0 -50 0 50 100 150 0.1 0.05 0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 f = 1.0 MHz Ciss td(on), tr, td(off), tf - Switching Time - ns 5 000 Ciss, Coss, Crss - Capacitance - pF 500 SWITCHING CHARACTERISTICS tr 100 tf 1 000 td(off) 10 td(on) 100 Coss Crss 10 5 1 10 100 1000 VDS - Drain to Source Voltage - V 1.0 0.5 0.1 1.0 10 ID - Drain Current - A VDD = 100 V VGS = 10 V RG = 25 100 REVERSE RECOVERY TIME vs. DRAIN CURRENT 5 000 trr - Reverse Recovery time - ns di/dt = 50 A/s VGS = 0 400 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 VDD = 400 V 250 V 125 V 14 VGS 12 10 200 8 6 100 VDS 0 5 10 Qg - Gate Charge - nC 15 20 4 2 0 VGS - Gate to Source Voltage - V ID = 5.0 A 300 1 000 100 50 0.1 1.0 10 100 ID - Drain Current - A 5 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 20 EAS - Single Avalanche Energy - mJ 100 IAS - Single Avalanche Current - A ID(peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V EAS = 17.4 mJ 10 SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25C 15 10 IAS = 5.0 A EAS =1 7.4 1.0 mJ 5 0 25 50 75 100 125 150 175 0.1 100 1.0 m 10 m 100 m Starting Tch - Starting Channel Temperature - C L - Inductive Load - H 6 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 |
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