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BAR42FILM BAR43/A/C/SFILM
SMALL SIGNAL SCHOTTKY DIODES
K N.C. A
A K1
K2
BAR42FILM BAR43FILM
A1 K2
BAR43AFILM
K
DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching.
A2
K1
A1
A2
BAR43SFILM BAR43CFILM
SOT-23 (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp=10ms sinusoidal Tamb = 25C Value 30 100 750 250 - 65 to +150 150 260 Unit V mA mA mW C C C
Note 1: for double diodes, Ptot is the total power dissipation of both diodes.
*:
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
THERMAL RESISTANCE Symbol Rth(j-a) Test conditions Junction-ambient * Value 500 Unit C/W
* Mounted on epoxy board with recommended pad layout.
August 2001- Ed: 2B
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BAR42FILM BAR43/A/C/SFILM
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25C Tj = 25C Test Conditions IR = 100A BAR 42FILM BAR 43FILM All IR ** Tj = 25C Tj = 100C
Pulse test: * tp = 380s, < 2%
Min. 30 IF = 10 mA IF = 50 mA IF = 2 mA IF = 15 mA IF = 100 mA 0.26
Typ. 0.35 0.5
Max. 0.4 0.65 0.33 0.45 1 500 100
Unit V V
VR = 25V
nA A
** tp = 5 ms, <2%
DYNAMIC CHARACTERISTICS Symbol C trr * Test Conditions VR = 1V IF = 10 mA RL = 100 RL = 50 K Vi = 2V Min. F = 1MHz IR = 10 mA CL = 300 pF for BAR 43 80 Typ. 7 Max. 5 Unit pF ns %
Tj = 25C Tj = 25C Irr = 1mA Tj = 25C F = 45Mhz
* Detection effeciency
Fig. 1-1: Forward voltage drop versus forward current (typical values, low level).
Fig. 1-2: Forward voltage drop versus forward current (typical values, high level).
IFM(A) 2.00E-2 1.80E-2 Tj=100C 1.60E-2 1.40E-2 Tj=25C 1.20E-2 Tj=50C 1.00E-2 8.00E-3 6.00E-3 4.00E-3 2.00E-3 VFM(V) 0.00E+0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
5E-1
IFM(A)
Tj=100C
1E-1
Tj=50C
1E-2
Tj=25C
VFM(V) 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
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BAR42FILM BAR43/A/C/SFILM
Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). Fig. 3: Reverse leakage current versus junction temperature.
IR(A) 1E+2
Tj=100C
IR(A) 1E+4
VR=30V
1E+3 1E+2
1E+1 1E+0 1E-1 1E-2
Tj=50C
1E+1 1E+0
Tj=25C
1E-1
VR(V) 0 5 10 15 20 25 30
Tj(C) 1E-2 0 25 50 75 100 125 150
Fig. 4: Junction capacitance versus reverse voltage applied (typical values).
C(pF) 10
F=1MHz Tj=25C
Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommended pad layout, e(Cu)=35m). Zth(j-a)/Rth(j-a)
1.00
= 0.5
5
= 0.2
0.10
2 VR(V) 1 1 2 5 10 20 30
= 0.1
T
Single pulse
tp(s) 0.01 1E-3 1E-2 1E-1 1E+0
=tp/T
tp
1E+1
1E+2
Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W)
350 300 250 200 S(Cu) (mm) 150 0 5 10 15 20 25 30 35 40
P=0.25W
45
50
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BAR42FILM BAR43/A/C/SFILM
PACKAGE MECHANICAL DATA SOT-23 (Plastic)
E A
REF.
e B e1 D
S A1
L
H
c
A A1 B c D e e1 E H L S
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2.75 3.04 0.108 0.12 0.85 1.05 0.033 0.041 1.7 2.1 0.067 0.083 1.2 1.6 0.047 0.063 2.1 2.75 0.083 0.108 0.6 typ. 0.024 typ. 0.35 0.65 0.014 0.026
FOOT PRINT DIMENSIONS
0.9 0.035 0.9 0.035 1.1 0.043 2.35 0.92 1.9 0.075 1.45 0.037 mm inch 0.9 0.035
Ordering type BAR42FILM BAR43FILM BAR43AFILM BAR43CFILM
Marking D94 D95 DB1 DB2
1.1 0.043
Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
Weight 0.01g 0.01g 0.01g 0.01g 0.01g
Base qty 3000 3000 3000 3000 3000
Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Tape & reel
BAR43SFILM DA5 Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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