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PD - 94403
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC
IRL3716 IRL3716S IRL3716L
HEXFET(R) Power MOSFET
VDSS
20V
RDS(on) max
4.0m
ID
180A
TO-220AB IRL3716
D2Pak IRL3716S
TO-262 IRL3716L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 20 180 130 720 210 100 1.4 -55 to + 175
Units
V V A W W W/C C
= 25C = 100C = 25C = 100C
TJ , TSTG
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- 0.50 --- ---
Max.
0.72 --- 62 40
Units
C/W
Notes through are on page 11
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1
03/12/02
IRL3716/3716S/3716L
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.021 --- V/C Reference to 25C, ID = 1mA 3.0 4.0 VGS = 10V, ID = 90A m 4.0 4.8 VGS = 4.5V, ID = 72A --- 3.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 250 VDS = 16V, VGS = 0V, TJ = 125C --- 200 VGS = 16V nA --- -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 53 17 24 50 18 140 38 36 5090 3440 560 Max. Units Conditions --- S VDS = 10V, ID = 72A 79 ID = 72A 26 nC VDS = 16V 35 VGS = 4.5V 75 VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 72A ns --- RG = 3.9 --- VGS = 4.5V --- VGS = 0V pF --- VDS = 10V --- = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
640 72
Units
mJ A
Diode Characteristics
Symbol
IS
I SM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- 180 A --- 0.93 0.80 180 87 190 85 720 1.3 --- 280 130 280 130 V ns nC ns nC
VSD trr Q rr trr Q rr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 72A, VGS = 0V TJ = 125C, IS = 72A, VGS = 0V TJ = 25C, IF = 72A, VR=20V di/dt = 100A/s TJ = 125C, IF = 72A, VR=20V di/dt = 100A/s
2
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IRL3716/3716S/3716L
10000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
10000
ID , Drain-to-Source Current (A)
1000
ID , Drain-to-Source Current (A)
1000
VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
100
100
2.5V
10
10
2.5V
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.0
I D = 180A
ID , Drain-to-Source Current ( )
T J = 25C T J = 175C
RDS(on) , Drain-to-Source On Resistance
1.5
100.00
(Normalized)
1.0
0.5
10.00 2.0 3.0 4.0
VDS = 15V 20s PULSE WIDTH
5.0 6.0 7.0 8.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRL3716/3716S/3716L
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
16
ID = 72A
VDS = 16V
12
C, Capacitance(pF)
Ciss Coss
VGS, Gate-to-Source Voltage (V)
10000
8
1000
Crss
4
100 1 10 100
0 0 30 60 90 120 150
VDS , Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 175 C
10
T = 25 C J
ID, Drain-to-Source Current (A)
1000
I SD , Reverse Drain Current (A)
100
100sec
1msec 10 Tc = 25C Tj = 175C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec
1
0.1 0.2 0.8 1.4
V GS= 0 V
2.0 2.6
1
100
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRL3716/3716S/3716L
180
LIMITED BY PACKAGE
150
VDS VGS RG
RD
D.U.T.
+
-VDD
120
I D , Drain Current (A)
4.5V
90
Pulse Width 1 s Duty Factor 0.1 %
60
Fig 10a. Switching Time Test Circuit
VDS 90%
30
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
(Z thJC )
1
Thermal Response
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = 2. Peak T
J
P DM t1 t2 +TC
t1/ t 2
= P DM x Z thJC 0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL3716/3716S/3716L
1 5V 1650
VDS
L
D R IV E R E AS , Single Pulse Avalanche Energy (mJ)
1320
ID TOP 29A 51A 72A BOTTOM
RG
20V tp
D .U .T
IA S
+ V - DD
990
A
0 .0 1
660
Fig 12a. Unclamped Inductive Test Circuit
330
V (B R )D SS tp
0 25 50 75 100 125 150 175
Starting Tj, Junction Temperature
( C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
4.5 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRL3716/3716S/3716L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRL3716/3716S/3716L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 )
3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) -A6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 )
-B4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 )
4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN
1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 )
4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 )
3X 3X 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 )
0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) M BAM
3X
0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 )
0 .3 6 (.0 1 4 )
2 .5 4 (.1 0 0) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H
2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE
PART NU M BER IR F 1 0 1 0 9246 9B 1M
D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK
8
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IRL3716/3716S/3716L
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F.
6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0)
0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
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IRL3716/3716S/3716L
TO-262 Package Outline
TO-262 Part Marking Information
10
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IRL3716/3716S/3716L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 )
F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 )
1 5 .42 (.60 9 ) 1 5 .22 (.60 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TRL
1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
F E E D D IR E C T IO N
13.50 (.532 ) 12.80 (.504 )
2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4
3 30 .00 ( 14.1 73 ) MAX.
6 0.0 0 (2.36 2) M IN .
Notes:
N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26 .40 (1 .03 9) 24 .40 (.9 61 ) 3
30.4 0 (1.19 7) M A X. 4
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. This is only applied to TO-220AB package
Starting TJ = 25C, L = 0.25mH
RG = 25, I AS = 72A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/02
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